Infineon Technologies - FD1200R17KF6C-B2

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FD1200R17KF6C-B2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FD1200R17KF6C-B2
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 12500 W; Maximum Collector Current (IC): 2600 A; No. of Elements: 3; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 3.1 V;
Datasheet FD1200R17KF6C-B2 Datasheet
In Stock253
NAME DESCRIPTION
Maximum Collector Current (IC): 2600 A
Maximum Power Dissipation (Abs): 12500 W
Maximum Collector-Emitter Voltage: 1700 V
No. of Elements: 3
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.1 V
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