1300 W Insulated Gate Bipolar Transistors (IGBT) 13

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
BSM200GB120DLC	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1300 W	420 A	UNSPECIFIED			2.6 V	UNSPECIFIED	RECTANGULAR	2		650 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X7	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	190 ns
NVH950S75L4SPB	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1300 W		UNSPECIFIED	POWER CONTROL		1.55 V	UNSPECIFIED	RECTANGULAR	6		1148 ns	33	FLANGE MOUNT			175 Cel	SILICON	750 V		-40 Cel	20 V				UPPER	R-XUFM-X33	ISOLATED						423 ns
FS600R07A2E3B31BOSA1	Infineon Technologies	N-Channel			1300 W	530 A				1.5 V					540 ns					150 Cel	SILICON	650 V		-40 Cel	20 V		6.5 V				ISOLATED						190 ns
BSM200GT120DLC	Infineon Technologies				1300 W	200 A				2.6 V			3					Insulated Gate BIP Transistors		125 Cel		1200 V			20 V
FS600R07A2E3_B31	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1300 W	530 A	UNSPECIFIED	POWER CONTROL		1.5 V	UNSPECIFIED	RECTANGULAR	6		540 ns	33	FLANGE MOUNT			150 Cel	SILICON	650 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X33	ISOLATED				NOT SPECIFIED	NOT SPECIFIED	190 ns
BSM200GAL120DLC	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1300 W	420 A	UNSPECIFIED			2.6 V	UNSPECIFIED	RECTANGULAR	1		650 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V			20 V			MATTE TIN	UPPER	R-XUFM-X5	ISOLATED	Not Qualified		e3			190 ns
MG200Q1ZS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1300 W	200 A	PLASTIC/EPOXY	POWER CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		5	FLANGE MOUNT	Insulated Gate BIP Transistors	1300 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-PUFM-X5	ISOLATED	Not Qualified	HIGH SPEED
MG300J2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1300 W	300 A	UNSPECIFIED	MOTOR CONTROL	300 ns	2.7 V	UNSPECIFIED	RECTANGULAR	2	300 ns	200 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	1300 W	150 Cel	SILICON	600 V	400 ns		20 V	400 ns	8 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	200 ns
MG150Q2YS51	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1300 W	200 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	1250 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED				50 ns
MG200Q1JS40	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1300 W	200 A	UNSPECIFIED	POWER CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	1	500 ns		5	FLANGE MOUNT	Insulated Gate BIP Transistors	1300 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X5	ISOLATED	Not Qualified	HIGH SPEED
MG150Q2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1300 W	200 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	1250 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	50 ns
MG200Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1300 W	200 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors	1300 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED
MG300J1US51	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1300 W	300 A	UNSPECIFIED	MOTOR CONTROL	300 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	300 ns	200 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	1300 W	150 Cel	SILICON	600 V	400 ns		20 V	400 ns	8 V		UPPER	R-XUFM-X4	ISOLATED	Not Qualified	HIGH SPEED		NOT SPECIFIED	NOT SPECIFIED	200 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.