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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSM200GAL120DLC |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1300 W; Maximum Collector Current (IC): 420 A; Nominal Turn On Time (ton): 190 ns; |
| Datasheet | BSM200GAL120DLC Datasheet |
| In Stock | 526 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 420 A |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | NO |
| Terminal Finish: | MATTE TIN |
| Nominal Turn Off Time (toff): | 650 ns |
| No. of Terminals: | 5 |
| Maximum Power Dissipation (Abs): | 1300 W |
| Terminal Position: | UPPER |
| Nominal Turn On Time (ton): | 190 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X5 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 125 Cel |
| Case Connection: | ISOLATED |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Maximum Gate-Emitter Voltage: | 20 V |
| Maximum VCEsat: | 2.6 V |
