140 W Insulated Gate Bipolar Transistors (IGBT) 39

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
STGW19NC60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	42 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		272 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.75 V		SINGLE	R-PSFM-T3			Not Qualified		TO-247AC		NOT SPECIFIED	NOT SPECIFIED	32 ns
IRG4PSH71KDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	78 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	190 ns	660 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-274AA	e3			152 ns
IRGB4056DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	24 A	PLASTIC/EPOXY	POWER CONTROL	24 ns		THROUGH-HOLE	RECTANGULAR	1	31 ns	143 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	48 ns
IXBH10N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	20 A	PLASTIC/EPOXY	MOTOR CONTROL		3.8 V	THROUGH-HOLE	RECTANGULAR	1		1800 ns	3	FLANGE MOUNT		150 Cel	SILICON	1700 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD		10	260	63 ns
IRGS4056DPBF	Infineon Technologies	N-CHANNEL		YES	140 W	24 A	PLASTIC/EPOXY		24 ns		GULL WING	RECTANGULAR		31 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel		600 V		30 V	6.5 V		SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB
IXGR32N60CD1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	45 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		210 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	FAST		e1			50 ns
MGP21N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	31 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		558 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-220AB	e0			90 ns
STGW19NC60H	STMicroelectronics	N-CHANNEL	SINGLE	NO	140 W	42 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		272 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.75 V		SINGLE	R-PSFM-T3			Not Qualified		TO-247		NOT SPECIFIED	NOT SPECIFIED	32 ns
STGW19NC60W	STMicroelectronics	N-CHANNEL	SINGLE	NO	140 W	42 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		204 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.75 V		SINGLE	R-PSFM-T3			Not Qualified		TO-247AC		NOT SPECIFIED	NOT SPECIFIED	33 ns
IRGSL8B60KPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	140 W	28 A	PLASTIC/EPOXY	MOTOR CONTROL	26 ns		THROUGH-HOLE	RECTANGULAR	1	56 ns	220 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSIP-T3	1	COLLECTOR	Not Qualified		TO-262AA	e3			43 ns
IRGS8B60KTRRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	140 W	28 A	PLASTIC/EPOXY	MOTOR CONTROL	26 ns		GULL WING	RECTANGULAR	1	56 ns	220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3			43 ns
IRGS4620DPBF	Infineon Technologies	N-CHANNEL		YES	140 W	32 A												Insulated Gate BIP Transistors	175 Cel		600 V		20 V	6.5 V	MATTE TIN OVER NICKEL			1					e3
IRGIB4620DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W		PLASTIC/EPOXY	POWER CONTROL		1.85 V	THROUGH-HOLE	RECTANGULAR	1		143 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-40 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	48 ns
IRGS4056DTRLPBF	Infineon Technologies	N-CHANNEL		YES	140 W	24 A	PLASTIC/EPOXY		24 ns		GULL WING	RECTANGULAR		31 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel		600 V		30 V	6.5 V		SINGLE	R-PSSO-G2			Not Qualified		TO-263AB
IRGS8B60KPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	140 W	28 A	PLASTIC/EPOXY	MOTOR CONTROL	26 ns		GULL WING	RECTANGULAR	1	56 ns	220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260	43 ns
IKWH20N65WR6	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	40 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	THROUGH-HOLE	RECTANGULAR	1		272 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V		SINGLE	R-PSFM-T3					TO-247				38 ns
IRGS4056DTRRPBF	Infineon Technologies	N-CHANNEL		YES	140 W	24 A	PLASTIC/EPOXY		24 ns		GULL WING	RECTANGULAR		31 ns		2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel		600 V		30 V	6.5 V		SINGLE	R-PSSO-G2			Not Qualified		TO-263AB
IRGS4620DTRLPBF	Infineon Technologies	N-CHANNEL		YES	140 W	32 A												Insulated Gate BIP Transistors	175 Cel		600 V		20 V	6.5 V	MATTE TIN OVER NICKEL			1					e3
IRGS4620DTRRPBF	Infineon Technologies	N-CHANNEL		YES	140 W	32 A												Insulated Gate BIP Transistors	175 Cel		600 V		20 V	6.5 V	MATTE TIN OVER NICKEL			1					e3
IRGS8B60KTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	140 W	28 A	PLASTIC/EPOXY	MOTOR CONTROL	26 ns		GULL WING	RECTANGULAR	1	56 ns	220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.5 V	Matte Tin (Sn) - with Nickel (Ni) barrier	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260	43 ns
IRGB8B60KPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	140 W	28 A	PLASTIC/EPOXY	MOTOR CONTROL	26 ns		THROUGH-HOLE	RECTANGULAR	1	56 ns	220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	43 ns
IRGB4620DPBF	Infineon Technologies	N-CHANNEL		NO	140 W	32 A												Insulated Gate BIP Transistors	175 Cel		600 V		20 V	6.5 V										NOT SPECIFIED	NOT SPECIFIED
IRGP4620DPBF	Infineon Technologies	N-CHANNEL		NO	140 W	32 A												Insulated Gate BIP Transistors	175 Cel		600 V		20 V	6.5 V										NOT SPECIFIED	NOT SPECIFIED
IRGP4620D-EPBF	Infineon Technologies	N-CHANNEL		NO	140 W	32 A												Insulated Gate BIP Transistors	175 Cel		600 V		20 V	6.5 V										NOT SPECIFIED	NOT SPECIFIED
GT50J328	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	170 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		25 V			SINGLE	R-PSFM-T3		COLLECTOR							300 ns
GT10Q101	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	10 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	320 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	300 ns
GT50J328(Q)	Toshiba	N-CHANNEL		NO	140 W	50 A								170 ns				Insulated Gate BIP Transistors	150 Cel		600 V		25 V
GT10Q301	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	10 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	320 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	300 ns
RJH60D0DPQ-E0#T2	Renesas Electronics	N-CHANNEL		NO	140 W	45 A												Insulated Gate BIP Transistors	150 Cel		600 V		30 V
RJH60D0DPQ-A0-T0	Renesas Electronics	N-CHANNEL		NO	140 W	45 A												Insulated Gate BIP Transistors	150 Cel		600 V		30 V	6 V
RJP60D0DPK-00-T0	Renesas Electronics	N-CHANNEL	SINGLE	NO	140 W	45 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		30 V			SINGLE	R-PSFM-T3			Not Qualified						55 ns
RJH60D0DPK-00-T0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		180 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		30 V	6 V		SINGLE	R-PSFM-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED	85 ns
RJH60D0DPK-00#T0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		180 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		30 V	6 V		SINGLE	R-PSFM-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED	85 ns
RJP60D0DPK-00#T0	Renesas Electronics	N-CHANNEL	SINGLE	NO	140 W	45 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		30 V			SINGLE	R-PSFM-T3			Not Qualified						55 ns
RJH60M0DPQ-A0-T0	Renesas Electronics	N-CHANNEL		NO	140 W	45 A												Insulated Gate BIP Transistors	150 Cel		600 V		30 V	7 V
MWI15-12A7	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	140 W	30 A	UNSPECIFIED	POWER CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	6		570 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		MATTE TIN OVER NICKEL	UPPER	R-XUFM-X11		ISOLATED	Not Qualified			e3			175 ns	UL RECOGNIZED
MWI30-06A7	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	140 W	45 A	UNSPECIFIED	POWER CONTROL		2.4 V	UNSPECIFIED	RECTANGULAR	6		310 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		MATTE TIN OVER NICKEL	UPPER	R-XUFM-X11		ISOLATED	Not Qualified			e3			100 ns	UL RECOGNIZED
MWI30-06A7T	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	140 W	45 A	UNSPECIFIED	POWER CONTROL		2.4 V	UNSPECIFIED	RECTANGULAR	6		310 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		MATTE TIN OVER NICKEL	UPPER	R-XUFM-X13		ISOLATED	Not Qualified			e3			100 ns	UL RECOGNIZED
IXBT10N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	140 W	20 A	PLASTIC/EPOXY	MOTOR CONTROL		3.8 V	GULL WING	RECTANGULAR	1		1800 ns	2	SMALL OUTLINE		150 Cel	SILICON	1700 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	63 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.