1400 W Insulated Gate Bipolar Transistors (IGBT) 17

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SKM300GB123D

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1400 W

300 A

UNSPECIFIED

POWER CONTROL

3 V

UNSPECIFIED

RECTANGULAR

2

620 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

340 ns

UL RECOGNIZED

FF200R12KS4

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1400 W

275 A

UNSPECIFIED

3.7 V

UNSPECIFIED

RECTANGULAR

2

590 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

FAST

NOT SPECIFIED

NOT SPECIFIED

180 ns

BSM200GB120DN2

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1400 W

290 A

UNSPECIFIED

POWER CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

2

630 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

BSM200GAL120DN2

Infineon Technologies

1400 W

290 A

3 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

FF225R17ME3

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1400 W

340 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

2

1300 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

375 ns

BSM200GAR120DN2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1400 W

290 A

UNSPECIFIED

POWER CONTROL

3 V

UNSPECIFIED

RECTANGULAR

1

630 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

BSM200GA120DL

Infineon Technologies

1400 W

360 A

2.6 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

BSM200GT120DN2

Infineon Technologies

1400 W

300 A

3 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

FF225R17ME3ENG

Infineon Technologies

N-Channel

1400 W

340 A

2.45 V

1300 ns

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

ISOLATED

375 ns

BSM400GB60DN2

Infineon Technologies

1400 W

475 A

2.6 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

FS225R17KE3

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1400 W

340 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

6

1300 ns

29

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X29

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

375 ns

MG200Q2YS50

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1400 W

300 A

UNSPECIFIED

MOTOR CONTROL

3.6 V

UNSPECIFIED

RECTANGULAR

2

300 ns

500 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

1400 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

50 ns

MG300N1US1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1400 W

300 A

PLASTIC/EPOXY

MOTOR CONTROL

5 V

UNSPECIFIED

RECTANGULAR

1

1300 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

1200 ns

MG200Q1US41

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1400 W

200 A

UNSPECIFIED

MOTOR CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

1400 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

MG200Q1ZS11

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1400 W

200 A

UNSPECIFIED

MOTOR CONTROL

600 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

1400 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

HIGH SPEED

MG200Q2YS11

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1400 W

200 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

2

1000 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-PUFM-X7

Not Qualified

MWI225-17E9

Littelfuse

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1400 W

335 A

UNSPECIFIED

POWER CONTROL

2.9 V

UNSPECIFIED

RECTANGULAR

6

610 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1700 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

e3

290 ns

UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.