150 W Insulated Gate Bipolar Transistors (IGBT) 203

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXBA16N170AHV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	16 A	PLASTIC/EPOXY	POWER CONTROL		6 V	GULL WING	RECTANGULAR	1	100 ns	210 ns	2	SMALL OUTLINE			150 Cel	SILICON	1700 V		-55 Cel	20 V	350 ns	5.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	10	260	40 ns
IXBH15N160	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	15 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1600 V			20 V		8 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	260 ns
IXGM20N100A	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					1000 ns				Insulated Gate BIP Transistors		150 Cel		1000 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGM20N90	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					2000 ns				Insulated Gate BIP Transistors		150 Cel		900 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGP20N120	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1	700 ns	780 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V		-55 Cel	20 V	1500 ns	5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				48 ns
LGB8206ATI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY		7000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE			175 Cel	SILICON	390 V	9000 ns	-55 Cel	15 V	24000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR							6500 ns	AEC-Q101
IXA30PG1200DHGLB-TRR	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	150 W	43 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	GULL WING	RECTANGULAR	2		350 ns	9	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V			Nickel (39) Tin (984)	DUAL	R-PDSO-G9		ISOLATED		HIGH RELIABILITY					110 ns	UL RECOGNIZED
IXBH16N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	16 A	PLASTIC/EPOXY	POWER CONTROL		6 V	THROUGH-HOLE	RECTANGULAR	1	100 ns	210 ns	3	FLANGE MOUNT			150 Cel	SILICON	1700 V		-55 Cel	20 V	350 ns	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	40 ns
IXGA20N100	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		3 V	GULL WING	RECTANGULAR	1	700 ns	630 ns	2	SMALL OUTLINE			150 Cel	SILICON	1000 V		-55 Cel	20 V	1400 ns	5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	60 ns
IXGA20N250HV	Littelfuse	N-CHANNEL		YES	150 W	30 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1			2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	2500 V		-55 Cel	20 V		5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260
LGB8206ARI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY		7000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE			175 Cel	SILICON	390 V	9000 ns	-55 Cel	15 V	24000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR							6500 ns	AEC-Q101
LGB8245TI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	6000 ns		GULL WING	RECTANGULAR	1	12000 ns	12500 ns	2	SMALL OUTLINE			175 Cel	SILICON	500 V	8000 ns	-55 Cel	15 V	20000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR							4400 ns	AEC-Q101
IXGP20N100	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1	700 ns	630 ns	3	FLANGE MOUNT			150 Cel	SILICON	1000 V		-55 Cel	20 V	1400 ns	5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				60 ns
IXGA20N100A3	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	GULL WING	RECTANGULAR	1		1630 ns	2	SMALL OUTLINE			150 Cel	SILICON	1000 V		-55 Cel	20 V		5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	10	260	162 ns
IXGA15N120C	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	30 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	190 ns	470 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		-55 Cel	20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-263AB	e0			43 ns
IXBH15N140	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	15 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1400 V			20 V		8 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	260 ns
IXGP20N100A3	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		1630 ns	3	FLANGE MOUNT			150 Cel	SILICON	1000 V		-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB				162 ns
IXGM20N50	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					1500 ns				Insulated Gate BIP Transistors		150 Cel		500 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGM20N100	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					2000 ns				Insulated Gate BIP Transistors		150 Cel		1000 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGM20N80	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					2000 ns				Insulated Gate BIP Transistors		150 Cel		800 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGM20N50A	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					500 ns				Insulated Gate BIP Transistors		150 Cel		500 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
LGB8202ATI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	14000 ns	24000 ns	2	SMALL OUTLINE			175 Cel	SILICON	440 V	9000 ns	-55 Cel	15 V	24000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR							18500 ns	AEC-Q101
IXGM20N80A	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					1000 ns				Insulated Gate BIP Transistors		150 Cel		800 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGP15N120C	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	30 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	190 ns	470 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		5 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e0			43 ns
IXGM17N100	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	34 A	METAL	POWER CONTROL		3.5 V	PIN/PEG	ROUND	1		1900 ns	2	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	1000 V			20 V		5 V		BOTTOM	O-MBFM-P2		COLLECTOR	Not Qualified		TO-204AE		NOT SPECIFIED	NOT SPECIFIED	300 ns
IXGM17N100A	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	34 A	METAL	POWER CONTROL		4 V	PIN/PEG	ROUND	1		1450 ns	2	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	1000 V			20 V		5 V		BOTTOM	O-MBFM-P2		COLLECTOR	Not Qualified	HIGH SPEED	TO-204AE		NOT SPECIFIED	NOT SPECIFIED	300 ns
IXGA16N60C2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		190 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-263AB				43 ns
IXGP16N60B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		280 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5.5 V	PURE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB				43 ns
IXGA16N60B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		280 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-263AB				43 ns
MIXA30WB1200TED	Littelfuse	N-CHANNEL	COMPLEX	NO	150 W	43 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	7		350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns	UL RECOGNIZED
IXBT16N170A	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	16 A	PLASTIC/EPOXY	POWER CONTROL		6 V	GULL WING	RECTANGULAR	1	100 ns	210 ns	2	SMALL OUTLINE			150 Cel	SILICON	1700 V		-55 Cel	20 V	350 ns	5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	40 ns
IXGT15N120C	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	30 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	190 ns	470 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW SWITCHING LOSSES	TO-268AA	e0			43 ns
IXGH17N100U1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	34 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	THROUGH-HOLE	RECTANGULAR	1		1900 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	1000 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	300 ns
IXGH20N90A	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					1000 ns				Insulated Gate BIP Transistors		150 Cel		900 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
MIXA30W1200TML	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	150 W	43 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	6		350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X24		ISOLATED							110 ns	UL RECOGNIZED
IXGH20N50U1	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					500 ns				Insulated Gate BIP Transistors		150 Cel		500 V			20 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGH20N100A3	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		1630 ns	3	FLANGE MOUNT			150 Cel	SILICON	1000 V		-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	162 ns
IXGH22N50C	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	44 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		100 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	500 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	15 ns
IXGH20N90	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					2000 ns				Insulated Gate BIP Transistors		150 Cel		900 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGH9090	Littelfuse	N-CHANNEL		NO	150 W	48 A								400 ns				Insulated Gate BIP Transistors		150 Cel		600 V			20 V		5.5 V	Tin/Lead (Sn/Pb)								e0
IXGH20N50	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					1500 ns				Insulated Gate BIP Transistors		150 Cel		500 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGT4N250C	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	13 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		471 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	2500 V			20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260
IXGT28N30B	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	56 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		90 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	300 V			20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	FAST	TO-268AA	e3	10	260	15 ns
IXGH20N80	Littelfuse	N-CHANNEL		NO	150 W	40 A			200 ns					2000 ns				Insulated Gate BIP Transistors		150 Cel		800 V			30 V		5 V	Tin/Lead (Sn/Pb)								e0
IXGH20N100	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1	700 ns	630 ns	3	FLANGE MOUNT			150 Cel	SILICON	1000 V		-55 Cel	20 V	1400 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	60 ns
IXGT15N120CD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	30 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	190 ns	520 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-268AA	e0			43 ns
IXGH4N250C	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	13 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		471 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	2500 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247	e3	10	260
IXBT16N170AHV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	16 A	PLASTIC/EPOXY	POWER CONTROL		6 V	GULL WING	RECTANGULAR	1	100 ns	210 ns	2	SMALL OUTLINE			150 Cel	SILICON	1700 V		-55 Cel	20 V	350 ns	5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	40 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.