Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
14500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
435 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252AA |
NOT SPECIFIED |
NOT SPECIFIED |
4560 ns |
AEC-Q101 |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
150 W |
43 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
6 |
350 ns |
28 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X28 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
23.2 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
14 V |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
41 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
6800 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
450 V |
11000 ns |
-55 Cel |
10 V |
25000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
TO-252AA |
e3 |
30 |
260 |
2800 ns |
AEC-Q101 |
||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
23.2 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
14 V |
2.2 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
7000 ns |
1.85 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
6800 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
11000 ns |
-55 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-252 |
e3 |
30 |
260 |
2800 ns |
AEC-Q101 |
|||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
14500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
475 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252AA |
NOT SPECIFIED |
NOT SPECIFIED |
4560 ns |
AEC-Q101 |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
14500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
435 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
4560 ns |
AEC-Q101 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
428 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252 |
e3 |
24 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.6 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7600 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
450 V |
11000 ns |
-40 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
2800 ns |
||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
25 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
14500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
475 V |
-55 Cel |
16 V |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
4560 ns |
AEC-Q101 |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
43 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
SINGLE |
R-PSIP-T3 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
IEC-60747 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
15000 ns |
7600 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
450 V |
11000 ns |
-40 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
2800 ns |
|||||||||||||
|
STMicroelectronics |
N-CHANNEL |
NO |
150 W |
60 A |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
.007 ns |
1.65 V |
GULL WING |
RECTANGULAR |
1 |
.015 ns |
7.6 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
400 V |
.011 ns |
-55 Cel |
10 V |
.03 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
TO-263AB |
e3 |
30 |
260 |
2.8 ns |
AEC-Q101 |
||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
.007 ns |
1.65 V |
GULL WING |
RECTANGULAR |
1 |
.015 ns |
.0076 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
400 V |
.011 ns |
-55 Cel |
10 V |
.03 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
TO-252AA |
e3 |
30 |
260 |
.0028 ns |
AEC-Q101 |
||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.65 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7600 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
390 V |
11000 ns |
-55 Cel |
12 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
e3 |
30 |
260 |
2800 ns |
AEC-Q101 |
||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
21 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.6 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
7600 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
350 V |
11000 ns |
-40 Cel |
10 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
30 |
260 |
2800 ns |
||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
30 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
GULL WING |
RECTANGULAR |
1 |
22200 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
420 V |
16 V |
2.3 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
TO-263AB |
e3 |
4450 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
23 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
8100 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
11000 ns |
-40 Cel |
12 V |
30000 ns |
2.2 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
30 |
260 |
3500 ns |
AEC-Q101 |
||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
YES |
150 W |
23 A |
7000 ns |
15000 ns |
Insulated Gate BIP Transistors |
175 Cel |
440 V |
12 V |
2.2 V |
1 |
260 |
|||||||||||||||||||||||||||||||||||
|
IXYS Corporation |
N-CHANNEL |
SINGLE |
NO |
150 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1100 ns |
1600 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 W |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
40 ns |
||||||||||||||||||
|
IXYS Corporation |
N-CHANNEL |
SINGLE |
NO |
150 W |
48 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
500 ns |
925 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 W |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-247AD |
e1 |
300 ns |
|||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
150 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
18000 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.4 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOGIC LEVEL |
TO-220AB |
e0 |
8000 ns |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
150 W |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
600 ns |
4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
600 ns |
3.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
200 W |
150 Cel |
SILICON |
900 V |
25 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
150 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
600 ns |
3.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
200 W |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
34 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
695 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
3000 V |
-55 Cel |
20 V |
5 V |
Tin/Silver/Copper (Sn/Ag/Cu) |
SINGLE |
R-PSIP-T3 |
ISOLATED |
Not Qualified |
e1 |
NOT SPECIFIED |
NOT SPECIFIED |
608 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
150 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
700 ns |
780 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
1500 ns |
5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
10 |
260 |
48 ns |
||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
280 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e1 |
43 ns |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
190 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.5 V |
PURE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
43 ns |
|||||||||||||||||||||||
|
IXYS Corporation |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
48 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
500 ns |
925 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 W |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
FAST |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
300 ns |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
YES |
150 W |
41 A |
7000 ns |
15000 ns |
Insulated Gate BIP Transistors |
175 Cel |
390 V |
12 V |
2.2 V |
Matte Tin (Sn) - annealed |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
YES |
150 W |
41 A |
7000 ns |
15000 ns |
Insulated Gate BIP Transistors |
175 Cel |
390 V |
12 V |
2.2 V |
1 |
260 |
|||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
23 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
7000 ns |
1.25 V |
GULL WING |
RECTANGULAR |
1 |
15000 ns |
8100 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
440 V |
11000 ns |
-55 Cel |
10 V |
30000 ns |
2.2 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
TO-252AA |
e3 |
30 |
260 |
3500 ns |
AEC-Q101 |
||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
150 W |
20 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
5.7 V |
TIN |
1 |
e3 |
||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
7000 ns |
1.9 V |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
440 V |
9000 ns |
-55 Cel |
15 V |
24000 ns |
2.1 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
NOT SPECIFIED |
NOT SPECIFIED |
6500 ns |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
YES |
150 W |
20 A |
8000 ns |
14000 ns |
Insulated Gate BIP Transistors |
175 Cel |
390 V |
15 V |
2.1 V |
MATTE TIN |
e3 |
|||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
15 V |
2.1 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOGIC LEVEL COMPATIBLE |
e3 |
6500 ns |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
150 W |
41 A |
7000 ns |
15000 ns |
Insulated Gate BIP Transistors |
175 Cel |
390 V |
12 V |
2.2 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
390 V |
15 V |
2.3 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
VOLTAGE CLAMPING |
e0 |
235 |
6500 ns |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
150 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
320 V |
15 V |
2.4 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
e0 |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
NO |
150 W |
41 A |
7000 ns |
15000 ns |
Insulated Gate BIP Transistors |
175 Cel |
390 V |
12 V |
2.2 V |
Matte Tin (Sn) - annealed |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
150 W |
20 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
8000 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.1 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e0 |
235 |
6500 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.1 V |
TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e3 |
260 |
6500 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
YES |
150 W |
20 A |
6000 ns |
11000 ns |
Insulated Gate BIP Transistors |
175 Cel |
490 V |
15 V |
2.3 V |
MATTE TIN |
e3 |
|||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
150 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
8000 ns |
GULL WING |
RECTANGULAR |
1 |
14000 ns |
18500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
440 V |
15 V |
2.1 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
e3 |
6500 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
YES |
150 W |
20 A |
8000 ns |
14000 ns |
Insulated Gate BIP Transistors |
175 Cel |
390 V |
15 V |
2.1 V |
MATTE TIN |
e3 |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.