150 W Insulated Gate Bipolar Transistors (IGBT) 203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

STGD25N40LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

435 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

4560 ns

AEC-Q101

MIXA30W1200TED

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

150 W

43 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

350 ns

28

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

FGD3040G2-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

23.2 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

390 V

14 V

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

30

260

FGD3040G2-F085C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

41 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.25 V

GULL WING

RECTANGULAR

1

15000 ns

6800 ns

2

SMALL OUTLINE

175 Cel

SILICON

450 V

11000 ns

-55 Cel

10 V

25000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

TO-252AA

e3

30

260

2800 ns

AEC-Q101

FGD3040G2_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

23.2 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

GULL WING

RECTANGULAR

1

15000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

390 V

14 V

2.2 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

30

260

FGD3040G2-F085V

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

41 A

PLASTIC/EPOXY

POWER CONTROL

7000 ns

1.85 V

GULL WING

RECTANGULAR

1

15000 ns

6800 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

11000 ns

-55 Cel

10 V

30000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

30

260

2800 ns

AEC-Q101

STGD20N45LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

475 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

4560 ns

AEC-Q101

STGB25N40LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

435 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

4560 ns

AEC-Q101

IKD10N60RATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

428 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252

e3

24 ns

ISL9V3040D3ST

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

21 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.6 V

GULL WING

RECTANGULAR

1

15000 ns

7600 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

450 V

11000 ns

-40 Cel

10 V

30000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

30

260

2800 ns

STGB20N45LZAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.25 V

GULL WING

RECTANGULAR

1

14500 ns

2

SMALL OUTLINE

175 Cel

SILICON

475 V

-55 Cel

16 V

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

4560 ns

AEC-Q101

IXA27IF1200HJ

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

43 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSIP-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

ISL9V3040P3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

150 W

21 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.6 V

THROUGH-HOLE

RECTANGULAR

1

15000 ns

7600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

450 V

11000 ns

-40 Cel

10 V

30000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

2800 ns

STGP30H60DF

STMicroelectronics

N-CHANNEL

NO

150 W

60 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

NOT SPECIFIED

NOT SPECIFIED

ISL9V3040S3ST-F085C

Onsemi

N-CHANNEL

SINGLE

YES

150 W

21 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

.007 ns

1.65 V

GULL WING

RECTANGULAR

1

.015 ns

7.6 ns

2

SMALL OUTLINE

175 Cel

SILICON

400 V

.011 ns

-55 Cel

10 V

.03 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

TO-263AB

e3

30

260

2.8 ns

AEC-Q101

ISL9V3040D3ST-F085C

Onsemi

N-CHANNEL

SINGLE

YES

150 W

21 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

.007 ns

1.65 V

GULL WING

RECTANGULAR

1

.015 ns

.0076 ns

2

SMALL OUTLINE

175 Cel

SILICON

400 V

.011 ns

-55 Cel

10 V

.03 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

TO-252AA

e3

30

260

.0028 ns

AEC-Q101

ISL9V3040D3STV

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

21 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.65 V

GULL WING

RECTANGULAR

1

15000 ns

7600 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

11000 ns

-55 Cel

12 V

30000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

e3

30

260

2800 ns

AEC-Q101

ISL9V3036S3ST

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

21 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.6 V

GULL WING

RECTANGULAR

1

15000 ns

7600 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

350 V

11000 ns

-40 Cel

10 V

30000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

30

260

2800 ns

STGB18N40LZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

30 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

22200 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

420 V

16 V

2.3 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

TO-263AB

e3

4450 ns

FGB3245G2-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

23 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.25 V

GULL WING

RECTANGULAR

1

15000 ns

8100 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

11000 ns

-40 Cel

12 V

30000 ns

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

30

260

3500 ns

AEC-Q101

FGB3245G2_F085

Fairchild Semiconductor

N-CHANNEL

YES

150 W

23 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

440 V

12 V

2.2 V

1

260

IXGH31N60

IXYS Corporation

N-CHANNEL

SINGLE

NO

150 W

60 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

1100 ns

1600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

40 ns

IXSH24N60A

IXYS Corporation

N-CHANNEL

SINGLE

NO

150 W

48 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

500 ns

925 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

600 V

20 V

6.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-247AD

e1

300 ns

MGP20N40CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

18000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.4 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOGIC LEVEL

TO-220AB

e0

8000 ns

GT15Q101

Toshiba

N-CHANNEL

SINGLE

NO

150 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

1

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

1200 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

GT60M301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

60 A

PLASTIC/EPOXY

POWER CONTROL

600 ns

3.4 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

900 V

25 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

GT80J101

Toshiba

N-CHANNEL

SINGLE

NO

150 W

80 A

PLASTIC/EPOXY

POWER CONTROL

600 ns

3.5 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

600 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

IXBF20N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

34 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

695 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

Tin/Silver/Copper (Sn/Ag/Cu)

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e1

NOT SPECIFIED

NOT SPECIFIED

608 ns

IXGA20N120

Littelfuse

N-CHANNEL

SINGLE

YES

150 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

700 ns

780 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

1500 ns

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

48 ns

IXGH16N60B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e1

43 ns

IXGP16N60C2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

PURE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

43 ns

IXSH24N60AU1

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

48 A

PLASTIC/EPOXY

MOTOR CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

500 ns

925 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247

NOT SPECIFIED

NOT SPECIFIED

300 ns

FGB3040G2-F085

Onsemi

N-CHANNEL

YES

150 W

41 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

390 V

12 V

2.2 V

Matte Tin (Sn) - annealed

1

e3

30

260

FGB3040G2_F085

Fairchild Semiconductor

N-CHANNEL

YES

150 W

41 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

390 V

12 V

2.2 V

1

260

FGD3245G2-F085C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

23 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.25 V

GULL WING

RECTANGULAR

1

15000 ns

8100 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

11000 ns

-55 Cel

10 V

30000 ns

2.2 V

MATTE TIN

SINGLE

R-PSSO-G2

1

TO-252AA

e3

30

260

3500 ns

AEC-Q101

IKD10N60RFATMA1

Infineon Technologies

N-CHANNEL

YES

150 W

20 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

5.7 V

TIN

1

e3

NGB8202ANTF4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

7000 ns

1.9 V

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

6500 ns

NGB8206ANTF4G

Onsemi

N-CHANNEL

YES

150 W

20 A

8000 ns

14000 ns

Insulated Gate BIP Transistors

175 Cel

390 V

15 V

2.1 V

MATTE TIN

e3

NGB8206ANT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

8000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

390 V

15 V

2.1 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

LOGIC LEVEL COMPATIBLE

e3

6500 ns

FGI3040G2-F085

Onsemi

N-CHANNEL

NO

150 W

41 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

390 V

12 V

2.2 V

NOT SPECIFIED

NOT SPECIFIED

NGB8206NT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

8000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

390 V

15 V

2.3 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

e0

235

6500 ns

MGP20N35CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

320 V

15 V

2.4 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e0

FGP3040G2-F085

Onsemi

N-CHANNEL

NO

150 W

41 A

7000 ns

15000 ns

Insulated Gate BIP Transistors

175 Cel

390 V

12 V

2.2 V

Matte Tin (Sn) - annealed

e3

NOT SPECIFIED

NOT SPECIFIED

NGP8203N

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

8000 ns

THROUGH-HOLE

RECTANGULAR

1

14000 ns

18500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.1 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

235

6500 ns

NGB8202NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

8000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.1 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e3

260

6500 ns

NGB8245NT4G

Onsemi

N-CHANNEL

YES

150 W

20 A

6000 ns

11000 ns

Insulated Gate BIP Transistors

175 Cel

490 V

15 V

2.3 V

MATTE TIN

e3

NGB8202ANT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

8000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

440 V

15 V

2.1 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

e3

6500 ns

NGB8206ANSL3G

Onsemi

N-CHANNEL

YES

150 W

20 A

8000 ns

14000 ns

Insulated Gate BIP Transistors

175 Cel

390 V

15 V

2.1 V

MATTE TIN

e3

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.