Onsemi - FGB3040G2-F085

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FGB3040G2-F085 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FGB3040G2-F085
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 41 A; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Gate-Emitter Threshold Voltage: 2.2 V;
Datasheet FGB3040G2-F085 Datasheet
In Stock1,340
NAME DESCRIPTION
Other Names: FGB3040G2-F085DKR
FGB3040G2-F085TR
FGB3040G2_F085
2832-FGB3040G2-F085TR
FGB3040G2_F085CT
FGB3040G2_F085DKR-ND
FGB3040G2_F085TR
FGB3040G2_F085DKR
FGB3040G2_F085CT-ND
FGB3040G2-F085CT
FGB3040G2_F085TR-ND
Maximum Collector Current (IC): 41 A
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Rise Time (tr): 7000 ns
Maximum Gate-Emitter Threshold Voltage: 2.2 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 150 W
Maximum Collector-Emitter Voltage: 390 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 12 V
Peak Reflow Temperature (C): 260
Maximum Fall Time (tf): 15000 ns
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
1,340 $1.840 $2,465.600

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