Onsemi - NGB8206ANSL3G

NGB8206ANSL3G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGB8206ANSL3G
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
Datasheet NGB8206ANSL3G Datasheet
In Stock1,733
NAME DESCRIPTION
Maximum Collector Current (IC): 20 A
Maximum Rise Time (tr): 8000 ns
Maximum Gate-Emitter Threshold Voltage: 2.1 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 150 W
Maximum Collector-Emitter Voltage: 390 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 15 V
Maximum Fall Time (tf): 14000 ns
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Pricing (USD)

Qty. Unit Price Ext. Price
1,733 $0.558 $967.014

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