STGB18N40LZT4 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STGB18N40LZT4
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 30 A; Nominal Turn On Time (ton): 4450 ns;
Datasheet	STGB18N40LZT4 Datasheet
In Stock	7,543

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	30 A
Configuration:	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	AUTOMOTIVE IGNITION
Maximum Gate-Emitter Threshold Voltage:	2.3 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
Nominal Turn Off Time (toff):	22200 ns
No. of Terminals:	2
Maximum Power Dissipation (Abs):	150 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	4450 ns
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	420 V
Additional Features:	VOLTAGE CLAMPING
Maximum Gate-Emitter Voltage:	16 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
7,543	-	-

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