156 W Insulated Gate Bipolar Transistors (IGBT) 21

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
NGTB15N120FLWG	Onsemi	N-CHANNEL		NO	156 W	30 A												Insulated Gate BIP Transistors	150 Cel		1200 V		20 V	6.5 V	TIN								e3
IRGB10B60KDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	22 A	PLASTIC/EPOXY	MOTOR CONTROL	28 ns		THROUGH-HOLE	RECTANGULAR	1	34 ns	276 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	50 ns
FPF2G120BF07ASP	Onsemi	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	156 W	40 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	3		165 ns	32	FLANGE MOUNT		150 Cel	SILICON	650 V	-40 Cel	20 V	6.8 V		UPPER	R-XUFM-X32		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	49 ns
AIKP20N60CTAKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1		287 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220	e3			35 ns	AEC-Q101
FGA50N100BNTDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	50 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1	250 ns	760 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V		25 V	7 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified			e3			460 ns
FGA50N100BNTD2	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	100 ns	308 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1000 V		25 V	7 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified			e3			102 ns
FGA50N100BNTTU	Onsemi	N-CHANNEL	SINGLE	NO	156 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1	100 ns	308 ns	3	FLANGE MOUNT		150 Cel	SILICON	1000 V	-55 Cel	25 V	7 V		SINGLE	R-PSFM-T3							NOT SPECIFIED	NOT SPECIFIED	102 ns
NGTB15N120IHLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		440 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3
FPF2G120BF07AS	Onsemi	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	156 W	40 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	3		165 ns	32	FLANGE MOUNT		150 Cel	SILICON	650 V	-40 Cel	20 V	6.8 V		UPPER	R-XUFM-X32		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	49 ns
NGTB20N120IHSWG	Onsemi	N-CHANNEL		NO	156 W	40 A												Insulated Gate BIP Transistors	150 Cel		1200 V		20 V	6.5 V	TIN								e3
AIKB20N60CT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	GULL WING	RECTANGULAR	1		287 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3		260	35 ns	AEC-Q101
IKB20N60TA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	GULL WING	RECTANGULAR	1		287 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB		NOT SPECIFIED	NOT SPECIFIED	35 ns	AEC-Q101
IRGS10B60KDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	22 A	PLASTIC/EPOXY	MOTOR CONTROL	28 ns		GULL WING	RECTANGULAR	1	34 ns	276 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260	50 ns
IRGSL10B60KDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	22 A	PLASTIC/EPOXY	MOTOR CONTROL	28 ns		THROUGH-HOLE	RECTANGULAR	1	34 ns	276 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.5 V	Matte Tin (Sn) - with Nickel (Ni) barrier	SINGLE	R-PSIP-T3	1		Not Qualified		TO-262	e3	40	260	50 ns
IKB20N60TAATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	GULL WING	RECTANGULAR	1		287 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB		NOT SPECIFIED	NOT SPECIFIED	35 ns	AEC-Q101
AIKB20N60CTATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	GULL WING	RECTANGULAR	1		287 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3		260	35 ns	AEC-Q101
AIKP20N60CT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1		287 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220	e3			35 ns	AEC-Q101
IHW15N120E1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	30 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		1450 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V	8 V	TIN	SINGLE	R-PSFM-T3					TO-247	e3
IKP20N60TAHKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1		287 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	35 ns	AEC-Q101
IKP20N60TA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1		287 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	35 ns	AEC-Q101
GT50J122	Toshiba	N-CHANNEL	SINGLE	NO	156 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	260 ns	410 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		25 V		Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED		e0			230 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.