176 W Insulated Gate Bipolar Transistors (IGBT) 8

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
FGA3060ADF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	176 W	60 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	2.3 V	THROUGH-HOLE	RECTANGULAR	1	59.2 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V	7.6 V	MATTE TIN	SINGLE	R-PSFM-T3						e3			40 ns
FGA6530WDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	176 W	60 A	PLASTIC/EPOXY	SWITCHING	2.3 V	THROUGH-HOLE	RECTANGULAR	1	59.2 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	7.6 V	MATTE TIN	SINGLE	R-PSFM-T3						e3			40 ns
STGB35N35LZ-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	176 W	40 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	37000 ns	3	IN-LINE	Insulated Gate BIP Transistors	175 Cel	SILICON	380 V		12 V	2.3 V		SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified	VOLTAGE CLAMPING	TO-262AA		NOT SPECIFIED	NOT SPECIFIED	7600 ns
STGB35N35LZ	STMicroelectronics	N-CHANNEL		YES	176 W	40 A										Insulated Gate BIP Transistors	175 Cel		320 V		12 V	2.3 V	MATTE TIN			1					e3	30	245
STGB35N35LZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	176 W	40 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	37000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	380 V		12 V	2.3 V	MATTE TIN	DUAL	R-PDSO-G2	1	COLLECTOR	Not Qualified	VOLTAGE CLAMPING	TO-263AA	e3	30	245	7600 ns
STGP35N35LZ	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	176 W	40 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	37000 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	380 V		12 V	2.3 V	Matte Tin (Sn)	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	VOLTAGE CLAMPING	TO-220AB	e3			7600 ns
IHW30N65R5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	176 W	60 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	THROUGH-HOLE	RECTANGULAR	1	258 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V		SINGLE	R-PSFM-T3					TO-247		NOT SPECIFIED	NOT SPECIFIED	44 ns
IKW15N120CS7	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	176 W	36 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1	270 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V	-40 Cel	20 V	6.45 V		SINGLE	R-PSFM-T3					TO-247				34 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.