178 W Insulated Gate Bipolar Transistors (IGBT) 16

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SGW20N60

Infineon Technologies

N-CHANNEL

SINGLE

NO

178 W

40 A

PLASTIC/EPOXY

MOTOR CONTROL

46 ns

THROUGH-HOLE

RECTANGULAR

1

65 ns

313 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

66 ns

SGW20N60HS

Infineon Technologies

N-CHANNEL

SINGLE

NO

178 W

36 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

235 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

30 ns

IHW20T120

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

790 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

82 ns

FGP15N60UNDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

12.8 ns

69.8 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-220AB

e3

18.8 ns

IRGS4065PBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

178 W

70 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

560 ns

2

SMALL OUTLINE

150 Cel

SILICON

300 V

-40 Cel

30 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

58 ns

SKW20N60HS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178 W

36 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

235 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

30 ns

SKW20N60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

313 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

NOT APPLICABLE

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

66 ns

SGB20N60

Infineon Technologies

N-CHANNEL

SINGLE

YES

178 W

40 A

PLASTIC/EPOXY

POWER CONTROL

46 ns

GULL WING

RECTANGULAR

1

65 ns

313 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e3

245

66 ns

IKFW90N60EH3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178 W

77 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

312 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

76 ns

IKFW75N60ETXKSA1

Infineon Technologies

N-Channel

178 W

80 A

2 V

417 ns

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

ISOLATED

e3

79 ns

IKFW90N60EH3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178 W

77 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

312 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

76 ns

IRGB4065PBF

Infineon Technologies

N-CHANNEL

NO

178 W

70 A

Insulated Gate BIP Transistors

150 Cel

300 V

30 V

5 V

IKFW75N60ET

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

417 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

79 ns

IRGP4065PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

178 W

70 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

150 Cel

SILICON

300 V

-40 Cel

30 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

SGP20N60HS

Infineon Technologies

N-CHANNEL

SINGLE

NO

178 W

36 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

235 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

30 ns

SGP20N60

Infineon Technologies

N-CHANNEL

SINGLE

NO

178 W

40 A

PLASTIC/EPOXY

MOTOR CONTROL

46 ns

THROUGH-HOLE

RECTANGULAR

1

65 ns

313 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

66 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.