Infineon Technologies - IRGS4065PBF

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IRGS4065PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRGS4065PBF
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 178 W; Maximum Collector Current (IC): 70 A; Package Body Material: PLASTIC/EPOXY;
Datasheet IRGS4065PBF Datasheet
In Stock197
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 70 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5 V
Surface Mount: YES
Nominal Turn Off Time (toff): 560 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 178 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 58 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 300 V
Maximum Gate-Emitter Voltage: 30 V
Maximum VCEsat: 2.1 V
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