220 W Insulated Gate Bipolar Transistors (IGBT) 23

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IRGP20B60PDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	220 W	40 A	PLASTIC/EPOXY	POWER CONTROL	8 ns		THROUGH-HOLE	RECTANGULAR	1	17 ns	138 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH RELIABILITY, LOW CONDUCTION LOSS	TO-247AC	e3			25 ns
AFGB30T65SQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1		78.7 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-55 Cel	30 V	6 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263	e3	30	260	33.6 ns	AEC-Q101
IXGH30N60C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	45 ns
AFGB30T65SQDN-BW	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1		78.7 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263	e3	30	260	33.6 ns	AEC-Q101
STGW30N90D	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		928 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	900 V		25 V	5.75 V		SINGLE	R-PSFM-T3			Not Qualified		TO-247		NOT SPECIFIED	NOT SPECIFIED	41 ns
STGWA30N120KD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	220 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		756 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1200 V		25 V	6.5 V	Matte Tin (Sn)	SINGLE	R-PSFM-T3					TO-247	e3			57 ns
STGW33IH120D	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	220 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		740 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		25 V	5.75 V		SINGLE	R-PSFM-T3			Not Qualified		TO-247AC		NOT SPECIFIED	NOT SPECIFIED	57 ns
STGW35NC120HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		928 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		25 V	5.75 V		SINGLE	R-PSFM-T3			Not Qualified		TO-247		NOT SPECIFIED	NOT SPECIFIED	41 ns
STGW30N120KD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	220 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		756 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1200 V		25 V	5.75 V		SINGLE	R-PSFM-T3			Not Qualified		TO-247AC		NOT SPECIFIED	NOT SPECIFIED	57 ns
MUBW40-12T7	Littelfuse	N-CHANNEL	COMPLEX	NO	220 W	62 A	UNSPECIFIED	MOTOR CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	7		610 ns	20	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		MATTE TIN OVER NICKEL	UPPER	R-XUFM-X20		ISOLATED	Not Qualified			e3			140 ns	UL RECOGNIZED
IXGP36N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	220 W	96 A	PLASTIC/EPOXY	POWER CONTROL		1.4 V	THROUGH-HOLE	RECTANGULAR	1		1000 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB				43 ns
IXGP30N60C3D4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.5 V	Tin/Silver/Copper (Sn/Ag/Cu)	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e1	NOT SPECIFIED	NOT SPECIFIED	45 ns
IXGA30N60C3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3 V	GULL WING	RECTANGULAR	1		160 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AA	e3	10	260	37 ns
IXGA36N60A3	Littelfuse	N-CHANNEL	SINGLE	YES	220 W	96 A	PLASTIC/EPOXY	POWER CONTROL		1.4 V	GULL WING	RECTANGULAR	1		1000 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	10	260	43 ns
IXGA30N60C3	Littelfuse	N-CHANNEL	SINGLE	YES	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3 V	GULL WING	RECTANGULAR	1		160 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AA	e3	10	260	45 ns
IXGA30N60C3D4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		160 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	10	260	45 ns
IXGP30N60C3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				37 ns
IXGP30N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				45 ns
IXGH30N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	45 ns
IXGH36N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	220 W	96 A	PLASTIC/EPOXY	POWER CONTROL		1.4 V	THROUGH-HOLE	RECTANGULAR	1		1000 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	43 ns
IXGT30N60C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3 V	GULL WING	RECTANGULAR	1		160 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	45 ns
IXGH36N60A3D4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	220 W	96 A	PLASTIC/EPOXY	POWER CONTROL		1.4 V	THROUGH-HOLE	RECTANGULAR	1		1000 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	43 ns
IXGH30N60C3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	37 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.