250 W Insulated Gate Bipolar Transistors (IGBT) 202

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IXGH30N120C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	48 A	PLASTIC/EPOXY	POWER CONTROL	4.2 V	THROUGH-HOLE	RECTANGULAR	1		415 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	60 ns
IXGH28N120BD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	320 ns	590 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	63 ns
IXBT20N300	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		695 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	3000 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA	e3	10	260	608 ns
IXGH36N60B3D4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	36 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1	160 ns	225 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	360 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	43 ns
IXGT25N250HV	Littelfuse	N-CHANNEL		YES	250 W	60 A											Insulated Gate BIP Transistors	150 Cel		2500 V		20 V		5 V	MATTE TIN			1					e3	10	260
IXGH24N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	250 W	48 A	PLASTIC/EPOXY	POWER CONTROL	4.2 V	THROUGH-HOLE	RECTANGULAR	1		430 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	51 ns
IXGT24N170AH1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	24 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	80 ns	456 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA	e3	10	260	54 ns
IXGH24N170AH1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	24 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	80 ns	456 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			54 ns
IXGT20N140C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	42 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		524 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1400 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	ULTRA FAST	TO-268AA	e3	10	260	35 ns
IXGH20N140C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	42 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		524 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1400 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	ULTRA FAST	TO-247	e3			35 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.