250 W Insulated Gate Bipolar Transistors (IGBT) 202

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IRGP4640DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	65 A	PLASTIC/EPOXY	POWER CONTROL	31 ns	1.9 V	THROUGH-HOLE	RECTANGULAR	1	41 ns	164 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V	84 ns	-55 Cel	20 V	156 ns	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AC		NOT SPECIFIED	NOT SPECIFIED	64 ns
ISL9V5036P3_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	250 W	46 A	PLASTIC/EPOXY	POWER CONTROL	7000 ns		THROUGH-HOLE	RECTANGULAR	1	15000 ns	13600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	360 V			12 V		2.2 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOGIC LEVEL COMPATIBLE	TO-220AB	e3			2800 ns
ISL9V5036P3-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	250 W	46 A	PLASTIC/EPOXY	POWER CONTROL	7000 ns		THROUGH-HOLE	RECTANGULAR	1	15000 ns	13600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	360 V			12 V		2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR		LOGIC LEVEL COMPATIBLE	TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED	2800 ns
IXLF19N250A	Littelfuse	N-CHANNEL	SINGLE	NO	250 W	19 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		850 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	2500 V			20 V		8 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH RELIABILITY		e1			150 ns	UL RECOGNIZED
IKW40N65F5FKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	74 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		200 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-40 Cel	20 V		4.8 V	TIN	SINGLE	R-PSFM-T3					TO-247	e3			34 ns
IKP40N65F5XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	74 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		200 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-40 Cel	20 V		4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB	e3			34 ns
IKD15N60RATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	30 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		430 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V			20 V		5.7 V	TIN	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3			26 ns
IKW40N65H5FKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	74 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		217 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-40 Cel	20 V		4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			32 ns
SGL50N60RUFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	80 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	160 ns	329 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		8 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING	TO-264AA	e3			119 ns
IRGB4062DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	48 A	PLASTIC/EPOXY	POWER CONTROL	31 ns		THROUGH-HOLE	RECTANGULAR	1	41 ns	164 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V			20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	64 ns
IKB40N65EH5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	74 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1		205 ns	2	SMALL OUTLINE			175 Cel	SILICON	650 V		-40 Cel	20 V		4.8 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3			48 ns
IXGH24N170	Littelfuse	N-CHANNEL	SINGLE	NO	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	500 ns	560 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	105 ns
APTGT75A60T1G	Microchip Technology	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	250 W	100 A	UNSPECIFIED	MOTOR CONTROL		1.9 V	THROUGH-HOLE	RECTANGULAR	2		310 ns	12	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V			20 V			TIN SILVER COPPER	UPPER	R-XUFM-T12	1	ISOLATED	Not Qualified			e1			170 ns
IKD15N60RFATMA1	Infineon Technologies	N-CHANNEL		YES	250 W	30 A												Insulated Gate BIP Transistors		175 Cel		600 V			20 V		5.7 V	TIN			1					e3
STGW45HF60WD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	70 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		250 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5.75 V		SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247		NOT SPECIFIED	NOT SPECIFIED	44 ns
STGW45HF60WDI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	70 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5.75 V	Matte Tin (Sn)	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3
STGP100N30	STMicroelectronics	N-CHANNEL	SINGLE	NO	250 W	90 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING			THROUGH-HOLE	RECTANGULAR	1		310 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	330 V			20 V		5.5 V		SINGLE	R-PSFM-T3			Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
AUIRGP4062D	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	48 A	PLASTIC/EPOXY	POWER CONTROL	31 ns		THROUGH-HOLE	RECTANGULAR	1	41 ns	164 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V			20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AC		NOT SPECIFIED	NOT SPECIFIED	64 ns
IKP40N65H5XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	74 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		217 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-40 Cel	20 V		4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB	e3			32 ns
IKW40N65H5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	74 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		217 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-40 Cel	20 V		4.8 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED	32 ns
IKW40N65H5A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	74 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		204 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-40 Cel	20 V		4.8 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED	32 ns	AEC-Q101
IKW40N65H5AXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	74 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		204 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-40 Cel	20 V		4.8 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED	32 ns	AEC-Q101
STGW39NC60VD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	70 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		366 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5.75 V	TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-247AC	e3			46 ns
IXGN50N60BD2	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	1		200 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V			NICKEL	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	FAST					50 ns
IXBH20N300	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		695 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	3000 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3	10	260	608 ns
IXBF40N160	Littelfuse	N-CHANNEL	SINGLE	NO	250 W	28 A	PLASTIC/EPOXY	POWER CONTROL		7.1 V	THROUGH-HOLE	RECTANGULAR	1		340 ns	3	IN-LINE			150 Cel	SILICON	1600 V		-55 Cel	20 V		8 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED		HIGH RELIABILITY					260 ns
IXGH36N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	250 W	92 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		350 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	45 ns
IXBH24N170	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		1285 ns	3	FLANGE MOUNT			150 Cel	SILICON	1700 V		-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	190 ns
IXDH35N60BD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		390 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-247AD	e3	10	260	75 ns
IXGH28N120B	Littelfuse	N-CHANNEL	SINGLE	NO	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	THROUGH-HOLE	RECTANGULAR	1		590 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V		-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	63 ns
IXGN60N60	IXYS Corporation	N-CHANNEL	SINGLE	NO	250 W	100 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1	700 ns	650 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V	NICKEL	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	FAST					50 ns
SGL160N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	160 A	PLASTIC/EPOXY	MOTOR CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	262 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-264				150 ns
IXGH36N60B3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	160 ns	225 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V	360 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	46 ns
IXGH36N60B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	36 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	160 ns	225 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V	360 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	43 ns
IXGH50N60A	IXYS Corporation	N-CHANNEL	SINGLE	NO	250 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	880 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	250 W	150 Cel	SILICON	600 V			20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e1			290 ns
IXGM40N60A	IXYS Corporation	N-CHANNEL	SINGLE	NO	250 W	75 A	METAL	POWER CONTROL		3 V	PIN/PEG	ROUND	1		900 ns	2	FLANGE MOUNT	Insulated Gate BIP Transistors	250 W	150 Cel	SILICON	600 V			20 V		5 V		BOTTOM	O-MBFM-P2		COLLECTOR	Not Qualified	HIGH SPEED	TO-204AE		NOT SPECIFIED	NOT SPECIFIED	300 ns
SGL160N60UF	Onsemi	N-CHANNEL	SINGLE	NO	250 W	160 A	PLASTIC/EPOXY	MOTOR CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	262 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3					TO-264AA				150 ns
SGL160N60UFTU	Fairchild Semiconductor	N-CHANNEL	SINGLE	NO	250 W	160 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	150 ns	262 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING	TO-264AA	e3			150 ns
FP35R12U1T4	Infineon Technologies	N-CHANNEL	COMPLEX	NO	250 W	54 A	UNSPECIFIED	POWER CONTROL		2.25 V	UNSPECIFIED	RECTANGULAR	7		510 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X23	1	ISOLATED	Not Qualified					260	43 ns
FP75R06KE3	Infineon Technologies	N-CHANNEL	COMPLEX	NO	250 W	95 A	UNSPECIFIED			1.9 V	UNSPECIFIED	RECTANGULAR	7		760 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V			20 V				UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	170 ns
IRGP4062DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	48 A	PLASTIC/EPOXY	POWER CONTROL	31 ns		THROUGH-HOLE	RECTANGULAR	1	41 ns	164 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AC	e3			64 ns
FGH30T65UPD_F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		170 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AB		NOT SPECIFIED	NOT SPECIFIED	52 ns
FGH30T65UPDT-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		170 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	650 V			20 V		7.5 V	TIN	SINGLE	R-PSFM-T3	1	COLLECTOR			TO-247AB	e3			52 ns
NGTG30N60FLWG	Onsemi	N-CHANNEL		NO	250 W	60 A												Insulated Gate BIP Transistors		150 Cel		600 V			20 V		6.5 V	Tin (Sn)								e3
ISL9V5036S3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	250 W	46 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	13600 ns	2	SMALL OUTLINE			175 Cel	SILICON	420 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB		NOT SPECIFIED	NOT SPECIFIED	2800 ns	AEC-Q101
FGA20S125P_SN00336	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	1250 V			25 V		7.5 V		SINGLE	R-PSFM-T3
NGTB30N60FLWG	Onsemi	N-CHANNEL		NO	250 W	60 A												Insulated Gate BIP Transistors		150 Cel		600 V			20 V		6.5 V	TIN								e3
NGTB30N60IHLWG	Onsemi	N-CHANNEL		NO	250 W	60 A												Insulated Gate BIP Transistors		150 Cel		600 V			20 V		6.5 V	Tin (Sn)								e3

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.