Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
45 ns |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
40 ns |
96 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
85 ns |
-40 Cel |
20 V |
130 ns |
7.4 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
51 ns |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
55 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
260 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
34 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
250 W |
74 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
e3 |
34 ns |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
250 W |
50 A |
UNSPECIFIED |
MOTOR CONTROL |
600 ns |
4 V |
UNSPECIFIED |
RECTANGULAR |
6 |
500 ns |
800 ns |
19 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
250 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
UPPER |
R-XUFM-X19 |
ISOLATED |
Not Qualified |
HIGH SPEED |
400 ns |
||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
250 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1000 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-PUFM-X7 |
Not Qualified |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
50 A |
UNSPECIFIED |
MOTOR CONTROL |
600 ns |
3.5 V |
UNSPECIFIED |
RECTANGULAR |
1 |
350 ns |
780 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
250 W |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
700 ns |
||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
NO |
250 W |
75 A |
1000 ns |
400 ns |
Insulated Gate BIP Transistors |
150 Cel |
600 V |
20 V |
5 V |
||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
133 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
30 V |
5.9 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
38 ns |
||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
250 W |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
7.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
200 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
352 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1100 V |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
136 ns |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
250 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
385 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
7.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
165 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
352 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1350 V |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
136 ns |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
300 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
900 V |
25 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
150 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
352 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1100 V |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
136 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
140 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
140 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.55 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
352 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1350 V |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
136 ns |
||||||||||||||||||||||
Littelfuse |
250 W |
50 A |
3.5 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
500 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
250 W |
75 A |
UNSPECIFIED |
MOTOR CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
7 |
330 ns |
20 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
600 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X20 |
ISOLATED |
Not Qualified |
e3 |
110 ns |
UL RECOGNIZED |
|||||||||||||||||||||
Littelfuse |
250 W |
50 A |
4.5 V |
1 |
Insulated Gate BIP Transistors |
150 Cel |
900 V |
20 V |
|||||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
940 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AD |
e3 |
10 |
260 |
220 ns |
||||||||||||||||||
Littelfuse |
250 W |
75 A |
3.2 V |
1 |
Insulated Gate BIP Transistors |
500 V |
|||||||||||||||||||||||||||||||||||||||||||
Littelfuse |
250 W |
75 A |
3.2 V |
1 |
Insulated Gate BIP Transistors |
600 V |
|||||||||||||||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
250 W |
200 ns |
500 ns |
Insulated Gate BIP Transistors |
150 Cel |
500 V |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
250 W |
32 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
650 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
2200 V |
20 V |
8 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
e1 |
300 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
250 W |
48 A |
PLASTIC/EPOXY |
POWER CONTROL |
4.2 V |
GULL WING |
RECTANGULAR |
1 |
430 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
10 |
260 |
51 ns |
||||||||||||||||||
Littelfuse |
250 W |
75 A |
3.7 V |
1 |
Insulated Gate BIP Transistors |
1000 V |
|||||||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
250 W |
48 A |
PLASTIC/EPOXY |
POWER CONTROL |
4.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
430 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
51 ns |
||||||||||||||||||||||
Littelfuse |
250 W |
75 A |
3.7 V |
1 |
Insulated Gate BIP Transistors |
800 V |
|||||||||||||||||||||||||||||||||||||||||||
Littelfuse |
250 W |
75 A |
3.7 V |
1 |
Insulated Gate BIP Transistors |
900 V |
|||||||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
58 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
IEC-60747 |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
250 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
320 ns |
590 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-268AA |
e3 |
10 |
260 |
63 ns |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
250 W |
75 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
155 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-268AA |
e3 |
10 |
260 |
60 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
250 W |
75 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
150 ns |
280 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
500 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
FAST |
TO-247AD |
e3 |
10 |
260 |
50 ns |
|||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
250 W |
75 A |
200 ns |
500 ns |
Insulated Gate BIP Transistors |
150 Cel |
500 V |
20 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
NO |
250 W |
75 A |
200 ns |
2000 ns |
Insulated Gate BIP Transistors |
150 Cel |
500 V |
20 V |
5 V |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
48 A |
PLASTIC/EPOXY |
POWER CONTROL |
4.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
430 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
51 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
250 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.2 V |
GULL WING |
RECTANGULAR |
1 |
695 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
3000 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-268AA |
e3 |
10 |
260 |
608 ns |
||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
250 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
320 ns |
590 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-268AA |
e3 |
10 |
260 |
63 ns |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
250 W |
24 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
80 ns |
275 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-268AA |
e3 |
10 |
260 |
98 ns |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
250 W |
24 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
80 ns |
275 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AD |
e3 |
10 |
260 |
98 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
250 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.3 V |
GULL WING |
RECTANGULAR |
1 |
940 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-268AA |
e3 |
10 |
260 |
220 ns |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
250 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
500 ns |
560 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-268AA |
e3 |
10 |
260 |
105 ns |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
250 W |
28 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
340 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1400 V |
20 V |
8 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY, FAST SWITCHING |
e1 |
260 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
250 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
570 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-268AA |
e3 |
10 |
260 |
60 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
250 W |
105 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
350 ns |
21 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.5 V |
DUAL |
R-PDSO-G21 |
ISOLATED |
AVALANCHE RATED |
92 ns |
||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
YES |
250 W |
75 A |
150 ns |
Insulated Gate BIP Transistors |
150 Cel |
500 V |
20 V |
5 V |
|||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
250 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
1285 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-268AA |
e3 |
10 |
260 |
190 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.