250 W Insulated Gate Bipolar Transistors (IGBT) 202

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGP4740D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

45 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

40 ns

96 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

85 ns

-40 Cel

20 V

130 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

51 ns

IKW25N120CS7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

55 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

260 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

SINGLE

R-PSFM-T3

TO-247

34 ns

IGP40N65F5

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

34 ns

MG50Q6ES40

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

250 W

50 A

UNSPECIFIED

MOTOR CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

6

500 ns

800 ns

19

FLANGE MOUNT

Insulated Gate BIP Transistors

250 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

HIGH SPEED

400 ns

MG25Q2YS91

Toshiba

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

250 W

25 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

2

1000 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-PUFM-X7

Not Qualified

MG50J1ZS40

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

50 A

UNSPECIFIED

MOTOR CONTROL

600 ns

3.5 V

UNSPECIFIED

RECTANGULAR

1

350 ns

780 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

250 W

150 Cel

SILICON

600 V

20 V

6 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

700 ns

GN6075E

Renesas Electronics

N-CHANNEL

NO

250 W

75 A

1000 ns

400 ns

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

5 V

RBN50H65T1FPQ-A0#CB0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

133 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

30 V

5.9 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

38 ns

CT15SM-24

Renesas Electronics

N-CHANNEL

SINGLE

NO

250 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

7.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

200 ns

RJH1BF7RDPQ-80#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

352 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1100 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

136 ns

CT30SM-12

Renesas Electronics

N-CHANNEL

SINGLE

NO

250 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

385 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

165 ns

RJH1DF7RDPQ-80-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

352 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1350 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

136 ns

CT90AM-18

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

900 V

25 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

150 ns

RJH1BF7RDPQ-80-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

352 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1100 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

136 ns

RJH1CF7RDPQ-80-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

140 ns

RJH1CF7RDPQ-80#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

140 ns

RJH1DF7RDPQ-80#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.55 V

THROUGH-HOLE

RECTANGULAR

1

352 ns

3

FLANGE MOUNT

150 Cel

SILICON

1350 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

136 ns

IXGQ50N50Y4

Littelfuse

250 W

50 A

3.5 V

1

Insulated Gate BIP Transistors

150 Cel

500 V

20 V

MUBW50-06A8

Littelfuse

N-CHANNEL

COMPLEX

NO

250 W

75 A

UNSPECIFIED

MOTOR CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

7

330 ns

20

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X20

ISOLATED

Not Qualified

e3

110 ns

UL RECOGNIZED

IXGQ50N90Y4

Littelfuse

250 W

50 A

4.5 V

1

Insulated Gate BIP Transistors

150 Cel

900 V

20 V

IXBH16N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

40 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

940 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

220 ns

IXGE75N50Z

Littelfuse

250 W

75 A

3.2 V

1

Insulated Gate BIP Transistors

500 V

IXGE75N60Z

Littelfuse

250 W

75 A

3.2 V

1

Insulated Gate BIP Transistors

600 V

IXGM40N50A

Littelfuse

N-CHANNEL

NO

250 W

200 ns

500 ns

Insulated Gate BIP Transistors

150 Cel

500 V

Tin/Lead (Sn/Pb)

e0

IXLF19N220A

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

32 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

650 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

2200 V

20 V

8 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

HIGH RELIABILITY

e1

300 ns

IXGA24N120C3

Littelfuse

N-CHANNEL

SINGLE

YES

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

4.2 V

GULL WING

RECTANGULAR

1

430 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

51 ns

IXGE75N100Z

Littelfuse

250 W

75 A

3.7 V

1

Insulated Gate BIP Transistors

1000 V

IXGP24N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

4.2 V

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

51 ns

IXGE75N80Z

Littelfuse

250 W

75 A

3.7 V

1

Insulated Gate BIP Transistors

800 V

IXGE75N90Z

Littelfuse

250 W

75 A

3.7 V

1

Insulated Gate BIP Transistors

900 V

IXA33IF1200HB

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

58 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

IXGT28N120B

Littelfuse

N-CHANNEL

SINGLE

YES

250 W

50 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

320 ns

590 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

63 ns

IXGT40N60C

Littelfuse

N-CHANNEL

SINGLE

YES

250 W

75 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

155 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

60 ns

IXGH50N50B

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

75 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

150 ns

280 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AD

e3

10

260

50 ns

IXGH40N50A

Littelfuse

N-CHANNEL

NO

250 W

75 A

200 ns

500 ns

Insulated Gate BIP Transistors

150 Cel

500 V

20 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGH40N50

Littelfuse

N-CHANNEL

NO

250 W

75 A

200 ns

2000 ns

Insulated Gate BIP Transistors

150 Cel

500 V

20 V

5 V

Tin/Lead (Sn/Pb)

e0

IXGH24N120C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

4.2 V

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

51 ns

IXBT20N300HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

50 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

GULL WING

RECTANGULAR

1

695 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

608 ns

IXGT28N120BD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

50 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

320 ns

590 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

63 ns

IXGT24N170A

Littelfuse

N-CHANNEL

SINGLE

YES

250 W

24 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

80 ns

275 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

98 ns

IXGH24N170A

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

24 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

80 ns

275 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

98 ns

IXBT16N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

40 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

GULL WING

RECTANGULAR

1

940 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

220 ns

IXGT24N170

Littelfuse

N-CHANNEL

SINGLE

YES

250 W

50 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

500 ns

560 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

105 ns

IXBF40N140

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

28 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

340 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1400 V

20 V

8 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

HIGH RELIABILITY, FAST SWITCHING

e1

260 ns

IXGT40N60B

Littelfuse

N-CHANNEL

SINGLE

YES

250 W

75 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

570 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

60 ns

MMIX1X100N60B3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

105 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

350 ns

21

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

DUAL

R-PDSO-G21

ISOLATED

AVALANCHE RATED

92 ns

IXGH50N50BS

Littelfuse

N-CHANNEL

YES

250 W

75 A

150 ns

Insulated Gate BIP Transistors

150 Cel

500 V

20 V

5 V

IXBT24N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

1285 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

190 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.