Renesas Electronics - CT90AM-18

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CT90AM-18 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number CT90AM-18
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 60 A; Nominal Turn Off Time (toff): 300 ns;
Datasheet CT90AM-18 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 60 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 300 ns
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 250 W
Maximum Collector-Emitter Voltage: 900 V
Terminal Position: SINGLE
Nominal Turn On Time (ton): 150 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 25 V
Case Connection: COLLECTOR
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