30 W Insulated Gate Bipolar Transistors (IGBT) 45

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
STGF15H60DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	30 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		225 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	34 ns
GT15J321	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	15 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	150 ns	340 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V				SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH SPEED					170 ns
SGF23N60UFTU	Onsemi	N-CHANNEL	SINGLE	NO	30 W	23 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	250 ns	320 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING		e3			55 ns
TIG056BF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W		PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		410 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	400 V			20 V		5 V	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				78 ns
SGR6N60UF	Onsemi	N-CHANNEL	SINGLE	YES	30 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL		2.6 V	GULL WING	RECTANGULAR	1	150 ns	202 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V		-55 Cel	20 V	280 ns	6.5 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS, HIGH SPEED SWITCHING					54 ns
TIG056BF-1E	Onsemi	N-CHANNEL		NO	30 W													Insulated Gate BIP Transistors		150 Cel		430 V			33 V		5 V	MATTE TIN								e3
FGPF4565	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	30 A	PLASTIC/EPOXY	POWER CONTROL		1.88 V	THROUGH-HOLE	RECTANGULAR	1		242.8 ns	3	FLANGE MOUNT			150 Cel	SILICON	650 V		-55 Cel	25 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			72 ns
STGP7NB60KDFP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	14 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		202 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		7 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3			21 ns
STGF10HF60KD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	9 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V			20 V		6.5 V		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
STGF10M65DF2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	20 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		260 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	27 ns
STGP10NB60SDFP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	20 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3			1160 ns
STGF10H60DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	20 A	PLASTIC/EPOXY	POWER CONTROL		1.95 V	THROUGH-HOLE	RECTANGULAR	1		214 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	26.8 ns
BSM05GD100D	Infineon Technologies				30 W	5 A				2.8 V			1					Insulated Gate BIP Transistors				1000 V
SGU02N60	Infineon Technologies	N-CHANNEL	SINGLE	NO	30 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL	18 ns		THROUGH-HOLE	RECTANGULAR	1	63 ns	354 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSIP-T3			Not Qualified	LOW CONDUCTION LOSS	TO-251AA	e3			34 ns
SKP02N60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	6 A	PLASTIC/EPOXY	POWER CONTROL	17 ns		THROUGH-HOLE	RECTANGULAR	1	80 ns	354 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	34 ns
SGB02N60	Infineon Technologies	N-CHANNEL	SINGLE	YES	30 W	6 A	PLASTIC/EPOXY	POWER CONTROL	18 ns		GULL WING	RECTANGULAR	1	63 ns	354 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V		SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB			245	34 ns
IRG7IC18FDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	14 A	PLASTIC/EPOXY	POWER CONTROL	50 ns	1.85 V	THROUGH-HOLE	RECTANGULAR	1	190 ns	350 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	95 ns	-55 Cel	20 V	390 ns	7 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	70 ns
SGD02N60	Infineon Technologies	N-CHANNEL	SINGLE	YES	30 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL	18 ns		GULL WING	RECTANGULAR	1	63 ns	354 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V		SINGLE	R-PSSO-G2	3	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-252AA			260	34 ns
SGP02N60	Infineon Technologies	N-CHANNEL	SINGLE	NO	30 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL	18 ns		THROUGH-HOLE	RECTANGULAR	1	63 ns	354 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			34 ns
SKB02N60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	6 A	PLASTIC/EPOXY	POWER CONTROL	17 ns		GULL WING	RECTANGULAR	1	80 ns	354 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V		SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB			245	34 ns
BSM10GD60DLC	Infineon Technologies				30 W	10 A				2.45 V			1					Insulated Gate BIP Transistors		125 Cel		600 V			20 V
IKA10N60T	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	11.7 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		296 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V			20 V		5.7 V	TIN	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH SWITCHING SPEED	TO-220AB	e3			21 ns
GT8J101	Toshiba	N-CHANNEL	SINGLE	NO	30 W	8 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	THROUGH-HOLE	RECTANGULAR	1	350 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	30 W	150 Cel	SILICON	600 V			20 V		6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH SPEED	TO-220AB	e0			400 ns
GT15J341	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	15 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		320 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V			25 V				SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				180 ns
GT15J341,S4X	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	15 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		320 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V			25 V				SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				180 ns
GT10J303	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	10 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	300 ns	500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V				SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
RJP30K3DPP-M0#T2	Renesas Electronics	N-CHANNEL	SINGLE	NO	30 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		330 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	360 V			30 V		5 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				120 ns
RJP4301APP-M0-T2	Renesas Electronics	N-CHANNEL		NO	30 W													Insulated Gate BIP Transistors		150 Cel		430 V			33 V		5.5 V
RJP4301APP-M0#T2	Renesas Electronics	N-CHANNEL		NO	30 W													Insulated Gate BIP Transistors		150 Cel		430 V			33 V		5.5 V
RJH60M3DPP-M0	Renesas Electronics	N-CHANNEL		NO	30 W	35 A												Insulated Gate BIP Transistors		150 Cel		600 V			30 V		7 V
RJH60V1BDPP-M0#T2	Renesas Electronics	N-CHANNEL		NO	30 W	16 A												Insulated Gate BIP Transistors		150 Cel		600 V			30 V												NOT SPECIFIED	NOT SPECIFIED
RJH60D3DPP-M0#T2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	35 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			30 V				SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB				45 ns
RJP30K3DPP-M0-T2	Renesas Electronics	N-CHANNEL	SINGLE	NO	30 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		330 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	360 V			30 V		5 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				120 ns
RJP4301APP-00-T2	Renesas Electronics	N-CHANNEL	SINGLE	NO	30 W		PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		350 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	430 V			33 V		5.5 V		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	70 ns
RJH60A83RDPP-M0#T2	Renesas Electronics	N-CHANNEL		NO	30 W	20 A												Insulated Gate BIP Transistors		150 Cel		600 V			30 V		7.5 V										NOT SPECIFIED	NOT SPECIFIED
RJP30E3DPP-M0#T2	Renesas Electronics	N-CHANNEL	SINGLE	NO	30 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		240 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	360 V			30 V		5 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				160 ns
RJP63F3DPP-M0#T2	Renesas Electronics	N-CHANNEL	SINGLE	NO	30 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		150 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	630 V			30 V		5 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				90 ns
RJP30E3DPP-M0-T2	Renesas Electronics	N-CHANNEL	SINGLE	NO	30 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		240 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	360 V			30 V		5 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				160 ns
RJP63F3DPP-M0-T2	Renesas Electronics	N-CHANNEL	SINGLE	NO	30 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		150 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	630 V			30 V		5 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				90 ns
RJH60D3DPP-M0-T2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	35 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			30 V				SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB				45 ns
RJH60D1DPP-E0#T2	Renesas Electronics	N-CHANNEL		NO	30 W	20 A												Insulated Gate BIP Transistors		150 Cel		600 V			30 V												NOT SPECIFIED	NOT SPECIFIED
RJH60M1DPP-M0#T2	Renesas Electronics	N-CHANNEL		NO	30 W	16 A												Insulated Gate BIP Transistors		150 Cel		600 V			30 V												NOT SPECIFIED	NOT SPECIFIED
SGP6N60UF	Samsung	N-CHANNEL	SINGLE	NO	30 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	280 ns	120 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		7.5 V		SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED SWITCHING	TO-220				37 ns
SGW6N60UFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1	280 ns	120 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		7.5 V		SINGLE	R-PSSO-G2			Not Qualified	HIGH SPEED SWITCHING					37 ns
SGP6N60UFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	280 ns	120 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		7.5 V		SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED SWITCHING	TO-220				37 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.