Infineon Technologies - BSM10GD60DLC

BSM10GD60DLC by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSM10GD60DLC
Description	Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 10 A; Maximum Gate-Emitter Voltage: 20 V; No. of Elements: 1; Maximum Operating Temperature: 125 Cel;
Datasheet	BSM10GD60DLC Datasheet
In Stock	304

BSM10GD60DLC Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	10 A
Maximum Power Dissipation (Abs):	30 W
Maximum Collector-Emitter Voltage:	600 V
No. of Elements:	1
Maximum Operating Temperature:	125 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Maximum VCEsat:	2.45 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
304	-	-

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