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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | SGU02N60 |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 6 A; Additional Features: LOW CONDUCTION LOSS; |
Datasheet | SGU02N60 Datasheet |
In Stock | 14 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 6 A |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Maximum Rise Time (tr): | 18 ns |
Transistor Application: | MOTOR CONTROL |
Maximum Gate-Emitter Threshold Voltage: | 5 V |
Sub-Category: | Insulated Gate BIP Transistors |
Surface Mount: | NO |
Terminal Finish: | MATTE TIN |
Nominal Turn Off Time (toff): | 354 ns |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 30 W |
Terminal Position: | SINGLE |
Nominal Turn On Time (ton): | 34 ns |
Package Style (Meter): | IN-LINE |
JESD-30 Code: | R-PSIP-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Maximum Operating Temperature: | 150 Cel |
Maximum Fall Time (tf): | 63 ns |
JEDEC-95 Code: | TO-251AA |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 600 V |
Additional Features: | LOW CONDUCTION LOSS |
Maximum Gate-Emitter Voltage: | 20 V |