300 W Insulated Gate Bipolar Transistors (IGBT) 114

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IXGH48N60C3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	1		187 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	47 ns
IXGT35N120B	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	70 A	PLASTIC/EPOXY	POWER CONTROL	3.3 V	GULL WING	RECTANGULAR	1	320 ns	340 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	-55 Cel	20 V	600 ns	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	77 ns
IXGH48N60B3C1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	246 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	400 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	48 ns
IXGT32N90B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	64 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1		690 ns	2	SMALL OUTLINE		150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	42 ns
IXYH40N65C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.35 V	THROUGH-HOLE	RECTANGULAR	1		206 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	65 ns
IXGH35N120B	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	70 A	PLASTIC/EPOXY	POWER CONTROL	3.3 V	THROUGH-HOLE	RECTANGULAR	1	320 ns	340 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V	600 ns	5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				77 ns
IXGH60N30C3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1		221 ns	3	FLANGE MOUNT		150 Cel	SILICON	300 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	50 ns
IXYH40N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	80 A	PLASTIC/EPOXY	POWER CONTROL	2.35 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				64 ns
IXGH32N90B2	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	64 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		690 ns	3	FLANGE MOUNT		150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	42 ns
IXGT32N90B2	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	64 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1		690 ns	2	SMALL OUTLINE		150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	42 ns
IXGT45N120	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	700 ns	1400 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	96 ns
IXGT35N120C	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	70 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		480 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW SWITCHING LOSSES	TO-268AA	e0			86 ns
IXGH32N90B2D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	64 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		690 ns	3	FLANGE MOUNT		150 Cel	SILICON	900 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T4		COLLECTOR			TO-247AD	e3	10	260	42 ns
IXGH35N120C	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	70 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		480 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW SWITCHING LOSSES	TO-247AD	e0			86 ns
IXGH45N120	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	700 ns	1400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	96 ns
IXYH40N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	86 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1		350 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				57 ns
IXYH40N65B3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	86 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1		213 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				57 ns
IXGH28N140B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		915 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1400 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3			66 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.