300 W Insulated Gate Bipolar Transistors (IGBT) 114

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
BUP307D	Infineon Technologies	N-CHANNEL	SINGLE	NO	300 W	35 A	PLASTIC/EPOXY	MOTOR CONTROL	35 ns		THROUGH-HOLE	RECTANGULAR	1	28 ns	250 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6.5 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED	TO-218AB	e0			52 ns
SP001532874	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL	35 ns	4 V	THROUGH-HOLE	RECTANGULAR	1	75 ns	270 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	100 ns	-55 Cel	20 V	305 ns	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				75 ns
IRGP4263-EPBF	Infineon Technologies	N-CHANNEL		NO	300 W	90 A			80 ns					50 ns				Insulated Gate BIP Transistors		175 Cel		650 V			20 V		7.7 V										NOT SPECIFIED	NOT SPECIFIED
IRGP20B120U-EP	Infineon Technologies	N-CHANNEL	SINGLE	NO	300 W	40 A	PLASTIC/EPOXY	POWER CONTROL	30 ns		THROUGH-HOLE	RECTANGULAR	1	35 ns	228 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3			Not Qualified		TO-247AD	e3			70 ns
IRGP20B120UD-EP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	40 A	PLASTIC/EPOXY	POWER CONTROL	30 ns		THROUGH-HOLE	RECTANGULAR	1	35 ns	228 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-247AD	e3			70 ns
MG100J1BS11	Toshiba	N-CHANNEL	SINGLE	NO	300 W	100 A	UNSPECIFIED	MOTOR CONTROL	800 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	1000 ns	1000 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	300 W	150 Cel	SILICON	600 V			20 V		6 V		UPPER	R-XUFM-X3		ISOLATED	Not Qualified	HIGH SPEED					400 ns
MG50Q1BS1	Toshiba	N-CHANNEL	SINGLE	NO	300 W	50 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-PUFM-X3			Not Qualified	HIGH SPEED
MG100J7KS50	Toshiba			NO	300 W	100 A	UNSPECIFIED			2.5 V	UNSPECIFIED	RECTANGULAR	1			22	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		600 V			20 V				UPPER	R-XUFM-X22			Not Qualified
RJH60D7DPQ-E0#T2	Renesas Electronics	N-CHANNEL		NO	300 W	90 A												Insulated Gate BIP Transistors		150 Cel		600 V			30 V												NOT SPECIFIED	NOT SPECIFIED
CT75AM-12	Renesas Electronics	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		420 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		7.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified						305 ns
RJH60M7DPQ-A0-T0	Renesas Electronics	N-CHANNEL		NO	300 W	90 A												Insulated Gate BIP Transistors		150 Cel		600 V			30 V		7 V
RJH60D7BDPQ-E0#T2	Renesas Electronics	N-CHANNEL		NO	300 W	90 A												Insulated Gate BIP Transistors		150 Cel		600 V			30 V		6 V										NOT SPECIFIED	NOT SPECIFIED
RJH60D7DPK-00-T0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	90 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		285 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			30 V		6 V		SINGLE	R-PSFM-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED	155 ns
RJH60D7ADPK-00#T0	Renesas Electronics	N-CHANNEL		NO	300 W	90 A												Insulated Gate BIP Transistors		150 Cel		600 V			30 V		6 V										NOT SPECIFIED	NOT SPECIFIED
IXGQ75N90Y4	Littelfuse				300 W	75 A				4.5 V			1					Insulated Gate BIP Transistors		150 Cel		900 V			20 V
IXGQ75N50Y4	Littelfuse				300 W	75 A				3.5 V			1					Insulated Gate BIP Transistors		150 Cel		500 V			20 V
IXGQ50N100Y4	Littelfuse				300 W	50 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		1000 V			20 V
IXGQ50N60Y4	Littelfuse				300 W	50 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		600 V			20 V
IXYQ40N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.35 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR							64 ns
IXBH40N140	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	33 A	PLASTIC/EPOXY	MOTOR CONTROL	150 ns	6 V	THROUGH-HOLE	RECTANGULAR	1	700 ns	310 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	300 W	150 Cel	SILICON	1400 V			20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	BIPOLAR MOS TRANSISTOR WITH COLLECTOR-EMITTER ON RESISTANCE OF 0.24 OHMS	TO-247AD	e3	10	260	260 ns
IXDH30N120	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		570 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW SWITCHING LOSSES	TO-247AD	e3	10	260	170 ns
IXGI48N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		187 ns	3	IN-LINE			150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-262AA				45 ns
IXDT30N120	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		570 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW SWITCHING LOSSES	TO-268AA	e3	10	260	170 ns
IXRH50N60	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		455 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		8 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	180 ns
IXRP15N120	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	25 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		253 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3			33.5 ns
IXRH50N100	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		455 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V			20 V		8 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	180 ns
IXRH50N80	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		455 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	800 V			20 V		8 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	180 ns
IXGP48N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	120 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	THROUGH-HOLE	RECTANGULAR	1		925 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB				54 ns
IXGA48N60B3	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	48 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	GULL WING	RECTANGULAR	1	200 ns	246 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V		-55 Cel	20 V	400 ns	5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	10	260	47 ns
IXGA48N60C3-TRL	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	GULL WING	RECTANGULAR	1		187 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	45 ns
IXYQ40N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	86 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		350 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR							57 ns
IXGP48N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		187 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				45 ns
IXGP48N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	48 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	246 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V	400 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB				47 ns
IXGP30N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	THROUGH-HOLE	RECTANGULAR	1	380 ns	331 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V		-55 Cel	20 V	580 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB				53 ns
IXGJ50N60B	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	270 ns	450 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified			e3			100 ns
IXDH30N120AU1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	50 A	PLASTIC/EPOXY	MOTOR CONTROL	130 ns		THROUGH-HOLE	RECTANGULAR	1	100 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	75 ns
IXRA15N120	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	25 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		253 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AA	e3	10	260	33.5 ns
IXGA48N60C3	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	GULL WING	RECTANGULAR	1		187 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	45 ns
IXDT30N120AU1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	50 A	PLASTIC/EPOXY	MOTOR CONTROL	130 ns		GULL WING	RECTANGULAR	1	100 ns	400 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	FAST	TO-268AA	e3	10	260	75 ns
IXRH50N120	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		455 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		8 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	180 ns
IXGX28N140B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		915 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1400 V			20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified			e1			66 ns
IXGK28N140B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		915 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1400 V			20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-264AA	e1			66 ns
IXDR30N120	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		570 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6.5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY		e1			170 ns
IXYH40N65C3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.35 V	THROUGH-HOLE	RECTANGULAR	1		130 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				63 ns
IXGT32N120A3	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.35 V	GULL WING	RECTANGULAR	1		1380 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V		-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	239 ns
IXGH48N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		187 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	45 ns
IXGH30N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	THROUGH-HOLE	RECTANGULAR	1	380 ns	331 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V		-55 Cel	20 V	580 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	53 ns
IXGH48N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	48 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	246 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V	400 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	47 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.