300 W Insulated Gate Bipolar Transistors (IGBT) 114

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IRGP4263PBF	Infineon Technologies	N-CHANNEL		NO	300 W	90 A			80 ns					50 ns				Insulated Gate BIP Transistors		175 Cel		650 V			20 V		7.7 V										NOT SPECIFIED	NOT SPECIFIED
IXGT30N120B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	30 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	GULL WING	RECTANGULAR	1	380 ns	331 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V		-55 Cel	20 V	580 ns	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	53 ns
STGWA50IH65DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	100 A	PLASTIC/EPOXY			2 V	THROUGH-HOLE	RECTANGULAR	1		294 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED
MG75Q1BS11	Toshiba	N-CHANNEL	SINGLE	NO	300 W	75 A	UNSPECIFIED	MOTOR CONTROL	600 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	1000 ns	1200 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	300 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X3		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
IXGH30N120B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	30 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	THROUGH-HOLE	RECTANGULAR	1	380 ns	331 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V		-55 Cel	20 V	580 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	53 ns
IXGH48N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	120 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	THROUGH-HOLE	RECTANGULAR	1		925 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	54 ns
IXGH48N60A3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	48 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	THROUGH-HOLE	RECTANGULAR	1		925 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	54 ns
IRGP30B120KD-EP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL	35 ns		THROUGH-HOLE	RECTANGULAR	1	75 ns	270 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		-55 Cel	20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3			Not Qualified		TO-247AD	e3			75 ns
IXGA30N120B3	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	GULL WING	RECTANGULAR	1	380 ns	331 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V		-55 Cel	20 V	580 ns	5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	10	260	53 ns
NGTB35N60FL2WG	Onsemi	N-CHANNEL		YES	300 W	70 A												Insulated Gate BIP Transistors		175 Cel		600 V			20 V		6.5 V	Matte Tin (Sn) - annealed								e3
IXGH48N60C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		187 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	45 ns
IXBX25N250	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	55 A	PLASTIC/EPOXY	POWER CONTROL		3.3 V	THROUGH-HOLE	RECTANGULAR	1		650 ns	3	IN-LINE			150 Cel	SILICON	2500 V		-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR		LOW CONDUCTION LOSS					694 ns
IXGA48N60A3	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	120 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	GULL WING	RECTANGULAR	1		925 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-263AB	e3	10	260	54 ns
IXGH32N120A3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.35 V	THROUGH-HOLE	RECTANGULAR	1		1380 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V		-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	239 ns
IXSH45N100	IXYS Corporation	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	1500 ns	2750 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	300 W	150 Cel	SILICON	1000 V			20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED	400 ns
IXDR30N120D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		570 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6.5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY		e1	10	260	170 ns
IXSH45N120	IXYS Corporation	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL		3 V	THROUGH-HOLE	RECTANGULAR	1		1650 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	300 W	150 Cel	SILICON	1200 V			20 V				SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED	330 ns
IXSK35N120AU1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	70 A	PLASTIC/EPOXY	MOTOR CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1		1100 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	300 W	150 Cel	SILICON	1200 V			20 V		8 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-264		NOT SPECIFIED	NOT SPECIFIED	230 ns
MG50Q1BS11	Toshiba	N-CHANNEL	SINGLE	NO	300 W	50 A	UNSPECIFIED	MOTOR CONTROL	600 ns	2.7 V	UNSPECIFIED	RECTANGULAR	1	1000 ns	1200 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	300 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X3		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
IXGA30N120B3-TRL	IXYS Corporation	N-CHANNEL	SINGLE	YES	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	GULL WING	RECTANGULAR	1	380 ns	331 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V		-55 Cel	20 V	580 ns	5 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-263AB				53 ns
IXGH48N60B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	48 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	246 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V	400 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	47 ns
FGA30N65SMD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		125 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	650 V			20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3						e3			41 ns
FGA50S110P	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		492 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	1100 V			25 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3						e3			370 ns
NGTB50N65S1WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	140 A	PLASTIC/EPOXY	POWER CONTROL		2.45 V	THROUGH-HOLE	RECTANGULAR	1		228 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V	Tin (Sn)	SINGLE	R-PSFM-T3					TO-247AD	e3			118 ns
ISL9V5045S3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	300 W	51 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	13600 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	445 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	2800 ns
NGTB35N65FL2WG	Onsemi	N-CHANNEL		NO	300 W	70 A												Insulated Gate BIP Transistors		175 Cel		650 V			20 V		6.5 V	MATTE TIN								e3
ISL9V5045S3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	300 W	51 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	THROUGH-HOLE	RECTANGULAR	1	15000 ns	13600 ns	3	IN-LINE			175 Cel	SILICON	445 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-262AA				2800 ns
ISL9V5045S3S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	300 W	51 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.6 V	GULL WING	RECTANGULAR	1	15000 ns	13600 ns	2	SMALL OUTLINE			175 Cel	SILICON	445 V	11000 ns	-40 Cel	12 V	30000 ns	2.2 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				2800 ns
NGTB40N65IHL2WG	Onsemi	N-CHANNEL		NO	300 W	80 A												Insulated Gate BIP Transistors		175 Cel		650 V			20 V		6.5 V	Matte Tin (Sn) - annealed								e3
NGTB30N65IHL2WG	Onsemi	N-CHANNEL		NO	300 W	60 A												Insulated Gate BIP Transistors		175 Cel		650 V			20 V		6.5 V	Matte Tin (Sn) - annealed								e3
NGTB45N60S1WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	90 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		223 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V		-55 Cel	20 V		6.5 V	Tin (Sn)	SINGLE	R-PSFM-T3					TO-247AD	e3			108 ns
NGTB45N60S2WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	90 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		232 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V		-55 Cel	20 V		6.5 V	Tin (Sn)	SINGLE	R-PSFM-T3					TO-247AD	e3
ISL9V5045S3ST-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	51 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13600 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	480 V			12 V		2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR		LOGIC LEVEL COMPATIBLE	TO-263AB	e3	30	260	2800 ns	AEC-Q101
TSG25N100DV	STMicroelectronics				300 W	50 A				3.5 V			1					Insulated Gate BIP Transistors		150 Cel		1000 V			20 V
TSG25N100DF	STMicroelectronics				300 W	50 A				3.5 V			1					Insulated Gate BIP Transistors		150 Cel		1000 V			20 V
TSG50N50DF	STMicroelectronics				300 W	50 A				3.3 V			1					Insulated Gate BIP Transistors		150 Cel		500 V			20 V
TSG50N50DV	STMicroelectronics				300 W	50 A				3.3 V			1					Insulated Gate BIP Transistors		150 Cel		500 V			20 V
STGE50NB60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	100 A	PLASTIC/EPOXY	MOTOR CONTROL		2.8 V	UNSPECIFIED	RECTANGULAR	1		540 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V			NICKEL	UPPER	R-PUFM-X4		ISOLATED	Not Qualified						90 ns
BUP314S	Infineon Technologies	N-CHANNEL	SINGLE	NO	300 W	25 A	PLASTIC/EPOXY	MOTOR CONTROL	90 ns		THROUGH-HOLE	RECTANGULAR	1	95 ns	490 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6.5 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified		TO-218AB	e0			125 ns
BUP314	Infineon Technologies	N-CHANNEL	SINGLE	NO	300 W	52 A	PLASTIC/EPOXY	MOTOR CONTROL	100 ns		THROUGH-HOLE	RECTANGULAR	1	60 ns	420 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED	TO-218	e3			75 ns
BUP314D	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	42 A	PLASTIC/EPOXY	MOTOR CONTROL	100 ns		THROUGH-HOLE	RECTANGULAR	1	60 ns	420 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	HIGH SPEED	TO-218	e3			75 ns
BSM25GB120D	Infineon Technologies				300 W	25 A				2.8 V			1					Insulated Gate BIP Transistors				1200 V
BUP604	Infineon Technologies	N-CHANNEL		NO	300 W	80 A			120 ns					780 ns				Insulated Gate BIP Transistors		150 Cel		600 V			20 V		6.5 V	Tin/Lead (Sn/Pb)								e0
BSM25GAL120D	Infineon Technologies	N-CHANNEL		NO	300 W	35 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR			500 ns		FLANGE MOUNT	Other Transistors			SILICON	1200 V							UPPER	R-XUFM-X		ISOLATED							140 ns
F3L100R07W2E3_B11	Infineon Technologies	N-CHANNEL	COMPLEX	NO	300 W	117 A	UNSPECIFIED	POWER CONTROL		1.9 V	UNSPECIFIED	RECTANGULAR	4		345 ns	14	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	650 V			20 V				UPPER	R-XUFM-X14		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	95 ns
BSM25GAL100D	Infineon Technologies				300 W	25 A				3.3 V			1					Insulated Gate BIP Transistors		150 Cel		1000 V			20 V
BSM25GD100D	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	300 W	25 A	PLASTIC/EPOXY	POWER CONTROL		4.5 V	SOLDER LUG	RECTANGULAR	6			17	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V			20 V				UPPER	R-PUFM-D17		ISOLATED	Not Qualified						30 ns
BSM25GD120D	Infineon Technologies				300 W	25 A				2.8 V			1					Insulated Gate BIP Transistors				1200 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.