333 W Insulated Gate Bipolar Transistors (IGBT) 20

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
FGH15T120SMD_F155	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		534 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V			25 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3			74 ns
FGH15T120SMD-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	30 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		534 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V			25 V		7.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB		NOT SPECIFIED	NOT SPECIFIED	74 ns
IHW30N110R3FKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		470 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1100 V			20 V		6.4 V	TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3
FGH60T65SQD-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	120 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		126.2 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR		RC-IGBT	TO-247AB	e3			36.8 ns
FGH40T100SMD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	80 A	PLASTIC/EPOXY	POWER CONTROL	64 ns	2.3 V	THROUGH-HOLE	RECTANGULAR	1	30 ns	305 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1000 V	100 ns	-55 Cel	20 V	397 ns	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3			76 ns
FGH40T100SMD-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	80 A	PLASTIC/EPOXY	POWER CONTROL	64 ns	2.3 V	THROUGH-HOLE	RECTANGULAR	1	30 ns	305 ns	3	FLANGE MOUNT		175 Cel	SILICON	1000 V	100 ns	-55 Cel	20 V	397 ns	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB		NOT SPECIFIED	NOT SPECIFIED	76 ns
AIKW50N60CTXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		396 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		-40 Cel	20 V		5.7 V	TIN	SINGLE	R-PSFM-T3					TO-247	e3			60 ns	AEC-Q101
IHW30N110R3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		470 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1100 V			20 V		6.4 V	TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3
IGP50N60T	Infineon Technologies	N-CHANNEL	SINGLE	NO	333 W	100 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		396 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		5.7 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST SWITCHING	TO-220AB	e3			60 ns
AIKW50N60CT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		396 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		-40 Cel	20 V		5.7 V	TIN	SINGLE	R-PSFM-T3					TO-247	e3			60 ns	AEC-Q101
SP000054926	Infineon Technologies	N-CHANNEL	SINGLE	NO	333 W	90 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		328 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		-40 Cel	20 V		5.7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				55 ns
SP000054922	Infineon Technologies	N-CHANNEL	SINGLE	YES	333 W	90 A	PLASTIC/EPOXY	POWER CONTROL		2 V	GULL WING	RECTANGULAR	1		328 ns	2	SMALL OUTLINE		175 Cel	SILICON	600 V		-40 Cel	20 V		5.7 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				55 ns
SP000702548	Infineon Technologies	N-Channel			333 W	100 A				2.3 V					297 ns				175 Cel	SILICON	600 V		-40 Cel	20 V		5.7 V												54 ns
IKW75N65ET7	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.65 V	THROUGH-HOLE	RECTANGULAR	1		325 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-40 Cel	20 V		5.7 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			53 ns
IGB50N60T	Infineon Technologies	N-CHANNEL	SINGLE	YES	333 W	100 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		396 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		5.7 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3		260	60 ns
IKW50N60T	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		396 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.7 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AC	e3			60 ns
IKW50N60TA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		396 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		-40 Cel	20 V		5.7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED	60 ns	AEC-Q101
IGW50N60T	Infineon Technologies	N-CHANNEL	SINGLE	NO	333 W	100 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		396 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		5.7 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST SWITCHING	TO-247AC	e3			60 ns
IGW50N60H3	Infineon Technologies	N-CHANNEL	SINGLE	NO	333 W	100 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		297 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		5.7 V	TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3			54 ns
IXGH85N30C3	Littelfuse	N-CHANNEL	SINGLE	NO	333 W	75 A	PLASTIC/EPOXY	POWER CONTROL		1.9 V	THROUGH-HOLE	RECTANGULAR	1		170 ns	3	FLANGE MOUNT		150 Cel	SILICON	300 V		-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	59 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.