FGH40T100SMD-F155 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	FGH40T100SMD-F155
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 333 W; Maximum Collector Current (IC): 80 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
Datasheet	FGH40T100SMD-F155 Datasheet
In Stock	411

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	80 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	64 ns
Transistor Application:	POWER CONTROL
Maximum Turn On Time (ton):	100 ns
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	305 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	333 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	76 ns
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	397 ns
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
Maximum Fall Time (tf):	30 ns
JEDEC-95 Code:	TO-247AB
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	1000 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.3 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
411	$7.980	$3,279.780

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