350 W Insulated Gate Bipolar Transistors (IGBT) 35

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IRG4PSH71UDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	350 W	99 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	330 ns	810 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		6 V		SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified	ULTRA FAST SWITCHING	TO-274AA		NOT SPECIFIED	NOT SPECIFIED	121 ns
MWI50-12A7T	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	350 W	85 A	UNSPECIFIED	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	6		570 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			MATTE TIN OVER NICKEL	UPPER	R-XUFM-X13	ISOLATED	Not Qualified			e3			170 ns	UL RECOGNIZED
IXA70I1200NA	Littelfuse	N-CHANNEL	SINGLE	NO	350 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	1		350 ns	4	FLANGE MOUNT			150 Cel	SILICON	1200 V	-40 Cel	20 V		6.5 V		UPPER	R-PUFM-X4	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	110 ns	IEC-60747; UL RECOGNIZED
IXA70R1200NA	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	350 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	1		350 ns	4	FLANGE MOUNT			150 Cel	SILICON	1200 V	-40 Cel	20 V		6.5 V		UPPER	R-PUFM-X4	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	110 ns	IEC-60747; UL RECOGNIZED
BSM50GD12DLCE3226	Infineon Technologies				350 W	50 A				2.6 V			1					Insulated Gate BIP Transistors		125 Cel		1200 V		20 V
IRG8P50N120KDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	350 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		410 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-40 Cel	30 V		6.5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AC				55 ns
DDB6U100N16RR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO	350 W	50 A	UNSPECIFIED	POWER CONTROL		3.2 V	UNSPECIFIED	RECTANGULAR	1			17	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X17	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
FP75R12KE3	Infineon Technologies	N-CHANNEL	COMPLEX	NO	350 W	105 A	UNSPECIFIED			2.15 V	UNSPECIFIED	RECTANGULAR	7		610 ns	35	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X35	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	330 ns
IRG8P50N120KD-EPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	350 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		410 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-40 Cel	30 V		6.5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247AD				55 ns
BSM50GD120DLC	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	350 W	85 A	UNSPECIFIED			2.6 V	UNSPECIFIED	RECTANGULAR	6		370 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X17	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns
BSM50GD120DN2	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	350 W	72 A	UNSPECIFIED			3.2 V	UNSPECIFIED	RECTANGULAR	6		450 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X17	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	100 ns
BSM50GB120DL	Infineon Technologies				350 W	90 A				2.6 V			1					Insulated Gate BIP Transistors		125 Cel		1200 V		20 V
BSM50GD120DN2E3226	Infineon Technologies				350 W	50 A				3 V			1					Insulated Gate BIP Transistors		150 Cel		1200 V		20 V
BSM50GD120DLCE3226	Infineon Technologies				350 W	50 A				2.6 V			1					Insulated Gate BIP Transistors		125 Cel		1200 V		20 V
FS75R12KE3G	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	350 W	100 A	UNSPECIFIED			2.1 V	UNSPECIFIED	RECTANGULAR	6		610 ns	35	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X35	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	340 ns
FS75R12KE3	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	350 W	105 A	UNSPECIFIED			2.15 V	UNSPECIFIED	RECTANGULAR	6		610 ns	28	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X28	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	340 ns
IRG4PSC71UPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	350 W	85 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	130 ns	304 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		6 V		SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-274AA		NOT SPECIFIED	NOT SPECIFIED	79 ns
MG50Q6ES51A	Toshiba			NO	350 W	72 A	UNSPECIFIED			3.2 V	PIN/PEG	RECTANGULAR	1			12	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel		1200 V		20 V				UPPER	R-XUFM-P12		Not Qualified
MG50Q6ES51	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	350 W	72 A	UNSPECIFIED	MOTOR CONTROL		3.2 V	UNSPECIFIED	RECTANGULAR	6		600 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X17	ISOLATED	Not Qualified						150 ns
MG75H2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	350 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL		5 V	UNSPECIFIED	RECTANGULAR	2		800 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	500 V						UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED					700 ns
MG50Q6ES50	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	350 W	72 A	UNSPECIFIED	MOTOR CONTROL		3.2 V	UNSPECIFIED	RECTANGULAR	6		600 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X17	ISOLATED	Not Qualified						150 ns
MG50Q6ES50A	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	350 W	50 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	6	300 ns	600 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors	350 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X17	ISOLATED	Not Qualified	HIGH SPEED					150 ns
MUBW50-12A8	Littelfuse	N-CHANNEL	COMPLEX	NO	350 W	85 A	UNSPECIFIED	POWER CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	7		570 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V		20 V			MATTE TIN OVER NICKEL	UPPER	R-XUFM-X24	ISOLATED	Not Qualified			e3			170 ns	UL RECOGNIZED
IXGQ75N100Y4	Littelfuse				350 W	75 A				4 V			1					Insulated Gate BIP Transistors		150 Cel		1000 V		20 V
MWI75-12A5	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	350 W	90 A	UNSPECIFIED	MOTOR CONTROL		3 V	PIN/PEG	RECTANGULAR	6		570 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			MATTE TIN	UPPER	R-XUFM-P17	ISOLATED	Not Qualified			e3			170 ns	UL RECOGNIZED
MWI50-12A7	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	350 W	85 A	UNSPECIFIED	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	6		570 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			MATTE TIN OVER NICKEL	UPPER	R-XUFM-X11	ISOLATED	Not Qualified			e3			170 ns	UL RECOGNIZED
IXDN50N120AU1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	350 W	70 A	PLASTIC/EPOXY	MOTOR CONTROL	100 ns		UNSPECIFIED	RECTANGULAR	1	100 ns	450 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		6.5 V	NICKEL	UPPER	R-PUFM-X4	ISOLATED	Not Qualified						105 ns	UL RECOGNIZED
IXGK35N120B	Littelfuse	N-CHANNEL	SINGLE	NO	350 W	70 A	PLASTIC/EPOXY	POWER CONTROL		3.3 V	THROUGH-HOLE	RECTANGULAR	1	320 ns	340 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-55 Cel	20 V	600 ns	5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3	COLLECTOR			TO-264AA	e1	10	260	77 ns
IXGX35N120BD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	350 W	70 A	PLASTIC/EPOXY	POWER CONTROL		3.3 V	THROUGH-HOLE	RECTANGULAR	1	320 ns	340 ns	3	IN-LINE			150 Cel	SILICON	1200 V	-55 Cel	20 V	600 ns	5 V		SINGLE	R-PSIP-T3	COLLECTOR							77 ns
IXBH40N160	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	350 W	33 A	PLASTIC/EPOXY	POWER CONTROL		7.1 V	THROUGH-HOLE	RECTANGULAR	1		310 ns	3	FLANGE MOUNT			150 Cel	SILICON	1600 V	-55 Cel	20 V		8 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR			TO-247AD	e3	10	260	260 ns
IXBJ40N140	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	350 W	33 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		310 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1400 V		20 V		8 V	MATTE TIN	SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified			e3			260 ns
IXBJ40N160	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	350 W	33 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		310 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1600 V		20 V		8 V	MATTE TIN	SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified			e3			260 ns
IXGK35N120BD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	350 W	70 A	PLASTIC/EPOXY	POWER CONTROL		3.3 V	THROUGH-HOLE	RECTANGULAR	1	320 ns	340 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-55 Cel	20 V	600 ns	5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3	COLLECTOR			TO-264AA	e1	10	260	77 ns
IXGX35N120B	Littelfuse	N-CHANNEL	SINGLE	NO	350 W	70 A	PLASTIC/EPOXY	POWER CONTROL		3.3 V	THROUGH-HOLE	RECTANGULAR	1	320 ns	340 ns	3	IN-LINE			150 Cel	SILICON	1200 V	-55 Cel	20 V	600 ns	5 V		SINGLE	R-PSIP-T3	COLLECTOR							77 ns
IXBX28N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	350 W	62 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		3785 ns	3	IN-LINE			150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3	COLLECTOR		LOW CONDUCTION LOSS					462 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.