595 W Insulated Gate Bipolar Transistors (IGBT) 12

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IRGPS60B120KDP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	595 W	105 A	PLASTIC/EPOXY	MOTOR CONTROL	45 ns		THROUGH-HOLE	RECTANGULAR	1	58 ns	411 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	-55 Cel	20 V	6 V		SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified		TO-274AA		NOT SPECIFIED	NOT SPECIFIED	104 ns
NGTB60N65FL2WG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	595 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		278 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3	COLLECTOR			TO-247	e3			168 ns
NGTB75N60SWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	595 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		380 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V	6.5 V	TIN	SINGLE	R-PSFM-T3				TO-247AD	e3			150 ns
IRGPS40B120UP	Infineon Technologies	N-CHANNEL	SINGLE	NO	595 W	80 A	PLASTIC/EPOXY	MOTOR CONTROL	55 ns		THROUGH-HOLE	RECTANGULAR	1	33 ns	357 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	6 V	TIN LEAD	SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified			e0			115 ns
IRGPS40B120UDP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	595 W	80 A	PLASTIC/EPOXY	MOTOR CONTROL	55 ns		THROUGH-HOLE	RECTANGULAR	1	33 ns	357 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	6 V		SINGLE	R-PSIP-T3	COLLECTOR	Not Qualified		TO-274AA		NOT SPECIFIED	NOT SPECIFIED	115 ns
BSM150GB60DLC	Infineon Technologies	N-CHANNEL	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE	NO	595 W	180 A	UNSPECIFIED			2.45 V	UNSPECIFIED	RECTANGULAR	2		260 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			UPPER	R-XUFM-X7	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	155 ns
IXCH36N250	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	595 W	73 A	PLASTIC/EPOXY	POWER CONTROL		3.3 V	THROUGH-HOLE	RECTANGULAR	1		1380 ns	3	FLANGE MOUNT		150 Cel	SILICON	2500 V	-55 Cel	25 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR			TO-247AD	e3	10	260	935 ns
IXGN120N60A3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	595 W	200 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	UNSPECIFIED	RECTANGULAR	1		830 ns	4	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5 V	NICKEL	UPPER	R-PUFM-X4	ISOLATED		LOW CONDUCTION LOSS					123 ns	UL RECOGNIZED
IXCK36N250	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	595 W	73 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		1380 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	2500 V		25 V	6.5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-264AA				935 ns
IXGN120N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	595 W	200 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	UNSPECIFIED	RECTANGULAR	1		830 ns	4	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	5 V	NICKEL	UPPER	R-PUFM-X4	ISOLATED		LOW CONDUCTION LOSS					123 ns	UL RECOGNIZED
IXGN82N120B3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	595 W	145 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1		760 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	5 V	NICKEL	UPPER	R-XUFM-X4	ISOLATED	Not Qualified	LOW CONDUCTION LOSS					112 ns	UL RECOGNIZED
IXGN82N120C3H1	Littelfuse				595 W	130 A				3.9 V			1					Insulated Gate BIP Transistors	150 Cel		1200 V		20 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.