Littelfuse - IXGN82N120C3H1

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IXGN82N120C3H1 by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXGN82N120C3H1
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 595 W; Maximum Collector Current (IC): 130 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V;
Datasheet IXGN82N120C3H1 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 130 A
Maximum Power Dissipation (Abs): 595 W
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.9 V
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