77 W Insulated Gate Bipolar Transistors (IGBT) 25

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IRGR4045DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	77 W	12 A	PLASTIC/EPOXY	POWER CONTROL	15 ns		GULL WING	RECTANGULAR	1	22 ns	127 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V	20 V	6.5 V		SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA				38 ns
IRGS4610DTRRPBF	Infineon Technologies	N-CHANNEL		YES	77 W	16 A												Insulated Gate BIP Transistors	175 Cel		600 V	20 V	6.5 V	MATTE TIN OVER NICKEL			1					e3
IRGS4610DTRLPBF	Infineon Technologies	N-CHANNEL		YES	77 W	16 A												Insulated Gate BIP Transistors	175 Cel		600 V	20 V	6.5 V	MATTE TIN OVER NICKEL			1					e3
IRGS4045DTRRPBF	Infineon Technologies	N-CHANNEL		YES	77 W	12 A			22 ns					22 ns				Insulated Gate BIP Transistors	175 Cel		600 V	20 V	6.5 V				1
IRGS4610DPBF	Infineon Technologies	N-CHANNEL		YES	77 W	16 A												Insulated Gate BIP Transistors	175 Cel		600 V	20 V	6.5 V	MATTE TIN OVER NICKEL			1					e3
FB20R06YE3_B1	Infineon Technologies	N-CHANNEL	COMPLEX	NO	77 W	27 A	UNSPECIFIED			2 V	UNSPECIFIED	RECTANGULAR	7		190 ns	26	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	20 V			UPPER	R-XUFM-X26		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	33 ns
FB20R06XE3	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	77 W	27 A	UNSPECIFIED			2 V	UNSPECIFIED	RECTANGULAR	6		250 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V	20 V			UPPER	R-XUFM-X17		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	37 ns
FP20R06YE3	Infineon Technologies	N-CHANNEL	COMPLEX	NO	77 W	27 A	UNSPECIFIED			2 V	UNSPECIFIED	RECTANGULAR	7		250 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	20 V			UPPER	R-XUFM-X23		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	37 ns
IRGS4045DTRLPBF	Infineon Technologies	N-CHANNEL		YES	77 W	12 A			22 ns					22 ns				Insulated Gate BIP Transistors	175 Cel		600 V	20 V	6.5 V				1
IRGS4045DPBF	Infineon Technologies	N-CHANNEL		YES	77 W	12 A			22 ns					22 ns				Insulated Gate BIP Transistors	175 Cel		600 V	20 V	6.5 V				1
IRGR4610DPBF	Infineon Technologies	N-CHANNEL		YES	77 W	16 A												Insulated Gate BIP Transistors	175 Cel		600 V	20 V	6.5 V	MATTE TIN OVER NICKEL			1					e3
AUIRGR4045D	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	77 W	12 A	PLASTIC/EPOXY	POWER CONTROL	15 ns		GULL WING	RECTANGULAR	1	22 ns	127 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V	20 V	6.5 V	Matte Tin (Sn) - with Nickel (Ni) barrier	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3	30	260	38 ns
IRGB4610DPBF	Infineon Technologies	N-CHANNEL		NO	77 W	16 A												Insulated Gate BIP Transistors	175 Cel		600 V	20 V	6.5 V										NOT SPECIFIED	NOT SPECIFIED
AUIRGR4045DTRL	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	77 W	12 A	PLASTIC/EPOXY	POWER CONTROL	15 ns		GULL WING	RECTANGULAR	1	22 ns	127 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V	20 V	6.5 V	Matte Tin (Sn) - with Nickel (Ni) barrier	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3	30	260	38 ns
IRGB4045DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	77 W	12 A	PLASTIC/EPOXY	POWER CONTROL	15 ns		THROUGH-HOLE	RECTANGULAR	1	22 ns	127 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V	20 V	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	38 ns
IRGR4045DTRPBF	Infineon Technologies	N-CHANNEL		YES	77 W	12 A			15 ns					22 ns				Insulated Gate BIP Transistors	175 Cel		600 V	20 V	6.5 V				1
IRGR4610DTRRPBF	Infineon Technologies	N-CHANNEL		YES	77 W	16 A												Insulated Gate BIP Transistors	175 Cel		600 V	20 V	6.5 V	MATTE TIN OVER NICKEL			1					e3
AUIRGR4045DTR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	77 W	12 A	PLASTIC/EPOXY	POWER CONTROL	15 ns		GULL WING	RECTANGULAR	1	22 ns	127 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V	20 V	6.5 V	Matte Tin (Sn) - with Nickel (Ni) barrier	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3	30	260	38 ns
AUIRGR4045DTRR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	77 W	12 A	PLASTIC/EPOXY	POWER CONTROL	15 ns		GULL WING	RECTANGULAR	1	22 ns	127 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V	20 V	6.5 V	Matte Tin (Sn) - with Nickel (Ni) barrier	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252AA	e3	30	260	38 ns
AUIRGU4045D	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	77 W	12 A	PLASTIC/EPOXY	POWER CONTROL	15 ns		THROUGH-HOLE	RECTANGULAR	1	22 ns	127 ns	3	IN-LINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V	20 V	6.5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251AA	e3			38 ns
IRGR4045DTRRPBF	Infineon Technologies	N-CHANNEL		YES	77 W	12 A			15 ns					22 ns				Insulated Gate BIP Transistors	175 Cel		600 V	20 V	6.5 V				1
IRGR4610DTRLPBF	Infineon Technologies	N-CHANNEL		YES	77 W	16 A												Insulated Gate BIP Transistors	175 Cel		600 V	20 V	6.5 V	MATTE TIN OVER NICKEL			1					e3
IRGR4610DTRPBF	Infineon Technologies	N-CHANNEL		YES	77 W	16 A												Insulated Gate BIP Transistors	175 Cel		600 V	20 V	6.5 V	MATTE TIN OVER NICKEL			1					e3
IRGR4045DTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	77 W	12 A	PLASTIC/EPOXY	POWER CONTROL	15 ns		GULL WING	RECTANGULAR	1	22 ns	127 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V	20 V	6.5 V		SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA				38 ns
MUBW25-06A6	Littelfuse	N-CHANNEL	COMPLEX	NO	77 W	27.5 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	7		230 ns	25	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	20 V		MATTE TIN	UPPER	R-XUFM-X25		ISOLATED	Not Qualified	FAST		e3			65 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.