IXYS Corporation Insulated Gate Bipolar Transistors (IGBT) 27

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGA20N120A3-TRL	IXYS Corporation	N-CHANNEL	SINGLE	YES	180 W	40 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	GULL WING	RECTANGULAR	1		1530 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-263AA				66 ns
IXGT6N170AHV-TRL	IXYS Corporation	N-CHANNEL	SINGLE	YES	75 W	6 A	PLASTIC/EPOXY	POWER CONTROL	7 V	GULL WING	RECTANGULAR	1		271 ns	2	SMALL OUTLINE			150 Cel	SILICON	1700 V	-55 Cel	20 V		5 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-268AA				91 ns
IXGN60N60C2D1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	480 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	UNSPECIFIED	RECTANGULAR	1		210 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			NICKEL	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	LOW CONDUCTION LOSS					43 ns	UL RECOGNIZED
IXGR40N60C2D1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		56 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		210 ns	3	IN-LINE			150 Cel	SILICON	600 V					TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified			e1			38 ns
IXGN50N60BD2	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	UNSPECIFIED	RECTANGULAR	1		200 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V			NICKEL	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	FAST					50 ns
IXGT16N170AH1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	190 W	16 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1	150 ns	330 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	97 ns
IXGH31N60	IXYS Corporation	N-CHANNEL	SINGLE	NO	150 W	60 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1	1100 ns	1600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	600 V		20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED	40 ns
IXGH40N60B2D1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		390 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V						SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED	38 ns
IXSH24N60A	IXYS Corporation	N-CHANNEL	SINGLE	NO	150 W	48 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1	500 ns	925 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	600 V		20 V		6.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-247AD	e1			300 ns
IXGN60N60	IXYS Corporation	N-CHANNEL	SINGLE	NO	250 W	100 A	PLASTIC/EPOXY	POWER CONTROL		UNSPECIFIED	RECTANGULAR	1	700 ns	650 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V	NICKEL	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	FAST					50 ns
IXSH45N100	IXYS Corporation	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1	1500 ns	2750 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	300 W	150 Cel	SILICON	1000 V		20 V		7 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED	400 ns
IXGH30N60BD1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	60 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	190 ns	200 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD		NOT SPECIFIED	NOT SPECIFIED	25 ns
IXGH32N60AU1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL	2.9 V	THROUGH-HOLE	RECTANGULAR	1	175 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	600 V		20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD		NOT SPECIFIED	NOT SPECIFIED	60 ns
IXGH39N60B	IXYS Corporation	N-CHANNEL	SINGLE	NO	200 W	76 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1	360 ns	710 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD		NOT SPECIFIED	NOT SPECIFIED	55 ns
IXGH40N60B2	IXYS Corporation	N-CHANNEL	SINGLE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		390 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V						SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED	38 ns
IXGH50N60A	IXYS Corporation	N-CHANNEL	SINGLE	NO	250 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1	200 ns	880 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	250 W	150 Cel	SILICON	600 V		20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e1			290 ns
IXGM40N60A	IXYS Corporation	N-CHANNEL	SINGLE	NO	250 W	75 A	METAL	POWER CONTROL	3 V	PIN/PEG	ROUND	1		900 ns	2	FLANGE MOUNT	Insulated Gate BIP Transistors	250 W	150 Cel	SILICON	600 V		20 V		5 V		BOTTOM	O-MBFM-P2		COLLECTOR	Not Qualified	HIGH SPEED	TO-204AE		NOT SPECIFIED	NOT SPECIFIED	300 ns
IXGR32N170AH1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		26 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		370 ns	3	FLANGE MOUNT			150 Cel	SILICON	1700 V					TIN SILVER COPPER	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e1			107 ns	UL RECOGNIZED
IXGR32N60CD1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	45 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		210 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	FAST		e1			50 ns
IXGT25N250-T/R	IXYS Corporation
IXSH24N60AU1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	48 A	PLASTIC/EPOXY	MOTOR CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1	500 ns	925 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	600 V		20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247		NOT SPECIFIED	NOT SPECIFIED	300 ns
IXSH45N120	IXYS Corporation	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL	3 V	THROUGH-HOLE	RECTANGULAR	1		1650 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	300 W	150 Cel	SILICON	1200 V		20 V				SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED	330 ns
IXSK35N120AU1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	70 A	PLASTIC/EPOXY	MOTOR CONTROL	4 V	THROUGH-HOLE	RECTANGULAR	1		1100 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	300 W	150 Cel	SILICON	1200 V		20 V		8 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-264		NOT SPECIFIED	NOT SPECIFIED	230 ns
IXSN55N120A	IXYS Corporation	N-CHANNEL	SINGLE	NO		80 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	1		600 ns	4	FLANGE MOUNT				SILICON	1200 V					NICKEL	UPPER	R-XUFM-X4		ISOLATED	Not Qualified						140 ns
IXYY8N90C3-TRL	IXYS Corporation	N-CHANNEL	SINGLE	YES	125 W	20 A	PLASTIC/EPOXY	POWER CONTROL	3 V	GULL WING	RECTANGULAR	1		238 ns	2	SMALL OUTLINE			175 Cel	SILICON	900 V	-55 Cel	20 V		6 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA				39 ns
MWI100-12E8	IXYS Corporation	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	640 W	165 A	UNSPECIFIED	POWER CONTROL	2.5 V	UNSPECIFIED	RECTANGULAR	6		795 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			TIN OVER NICKEL	UPPER	R-XUFM-X11		ISOLATED	Not Qualified			e3			345 ns	UL RECOGNIZED
IXGA30N120B3-TRL	IXYS Corporation	N-CHANNEL	SINGLE	YES	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL	3.5 V	GULL WING	RECTANGULAR	1	380 ns	331 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V	-55 Cel	20 V	580 ns	5 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-263AB				53 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.