STMicroelectronics Insulated Gate Bipolar Transistors (IGBT) 628

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

STGWA15H120F2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STGWA20H65DFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

147 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

178 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

26 ns

STGWA40HP65FB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

72 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

189 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

STGWA40IH65DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

80 A

PLASTIC/EPOXY

2 V

THROUGH-HOLE

RECTANGULAR

1

263 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

STGP30NC60K

STMicroelectronics

N-CHANNEL

SINGLE

NO

185 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

290 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

41 ns

STGB3NB60FDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68 W

6 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

535 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSSO-G2

Not Qualified

e0

16.5 ns

STGWA40HP65FB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

169 ns

STGW20H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

167 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

259 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

259 ns

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

55.9 ns

STGW30V60F

STMicroelectronics

N-CHANNEL

SINGLE

NO

260 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

225 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

59 ns

STGB10HF60KDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-263AB

STGW8M120DF3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

167 W

16 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

356 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

28.8 ns

STGWT80H65DFB

STMicroelectronics

N-CHANNEL

NO

469 W

120 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

NOT SPECIFIED

NOT SPECIFIED

STGD3HF60WDT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-252AA

STGP12NB60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

295 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

51 ns

STGP20IH65DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

159 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

159 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

STGWA30H60DFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

223 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

51.1 ns

STGWT60H65FB

STMicroelectronics

N-CHANNEL

SINGLE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

104 ns

STGF30H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

234 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

-40 Cel

20 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

64 ns

STGB6NB60H

STMicroelectronics

N-CHANNEL

SINGLE

YES

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

220 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

Not Qualified

63 ns

STGW20NB60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

40 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e3

76 ns

STGF10M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

260 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

27 ns

STGW30NC60W

STMicroelectronics

N-CHANNEL

SINGLE

NO

200 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

189 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e3

42.5 ns

STGW33IH120D

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

220 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

740 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

25 V

5.75 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

57 ns

STGW28IH125DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

60 A

PLASTIC/EPOXY

2.5 V

THROUGH-HOLE

RECTANGULAR

1

322 ns

3

FLANGE MOUNT

175 Cel

SILICON

1250 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

STGWA30HP65FB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

223 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

169 ns

STGWA20H65DFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

168 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

185 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

51.4 ns

STGD3NB60ST4

STMicroelectronics

N-CHANNEL

SINGLE

YES

45 W

6 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

4800 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-252AA

e3

710 ns

STGWA50H65DFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

272 W

86 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

225 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

41 ns

STGB35N35LZ

STMicroelectronics

N-CHANNEL

YES

176 W

40 A

Insulated Gate BIP Transistors

175 Cel

320 V

12 V

2.3 V

MATTE TIN

1

e3

30

245

STGD10NC60KT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

60 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

242 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

ULTRA FAST

e3

23 ns

STGW12NB60H

STMicroelectronics

N-CHANNEL

SINGLE

NO

120 W

24 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

295 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e0

51 ns

STGW35NC120HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

220 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

928 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

25 V

5.75 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

NOT SPECIFIED

41 ns

STGD7NB60H-1

STMicroelectronics

N-CHANNEL

SINGLE

NO

55 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

TO-251AA

63 ns

STGP10NC60K

STMicroelectronics

N-CHANNEL

SINGLE

NO

60 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

242 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

Not Qualified

ULTRA FAST

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

23 ns

STGF19NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

16 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

270 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

38 ns

STGWT38IH130D

STMicroelectronics

STGW40S120DF3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

158.46 ns

3

FLANGE MOUNT

SILICON

1200 V

-55 Cel

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

50 ns

STGB30NC60WT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

200 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

189 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

30

245

42.5 ns

STGB20V60F

STMicroelectronics

N-CHANNEL

SINGLE

YES

167 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

GULL WING

RECTANGULAR

1

173 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

49 ns

STGB10NB40LZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

150 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

12000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

380 V

2.2 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

245

1570 ns

STGD7NB60K

STMicroelectronics

N-CHANNEL

SINGLE

YES

55 W

14 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

202 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

Not Qualified

TO-252AA

e3

21 ns

STGB20NB37ZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

40 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

15900 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

375 V

2 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e3

2900 ns

STGB10NB40LZ

STMicroelectronics

N-CHANNEL

YES

150 W

10 A

Insulated Gate BIP Transistors

175 Cel

2.2 V

Matte Tin (Sn)

e3

STGF5NC60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

8 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

STGP7NB60MD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

670 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

19 ns

STGWA80H65FB

STMicroelectronics

N-CHANNEL

NO

469 W

120 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

7 V

NOT SPECIFIED

NOT SPECIFIED

STGP20NB60K

STMicroelectronics

N-CHANNEL

SINGLE

NO

125 W

40 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

76 ns

STGP10N50A

STMicroelectronics

N-CHANNEL

NO

100 W

20 A

150 ns

Insulated Gate BIP Transistors

150 Cel

500 V

20 V

4 V

Tin/Lead (Sn/Pb)

e0

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.