STMicroelectronics - STGB10NB40LZT4

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STGB10NB40LZT4 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGB10NB40LZT4
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Terminal Finish: Matte Tin (Sn) - annealed;
Datasheet STGB10NB40LZT4 Datasheet
In Stock767
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 20 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: AUTOMOTIVE IGNITION
Maximum Gate-Emitter Threshold Voltage: 2.2 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
Nominal Turn Off Time (toff): 12000 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 150 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 1570 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Other Names: 497-4349-1
-497-4349-6
497-4349-1-NDR
497-4349-2-NDR
-497-4349-2
497-4349-2
-497-4349-1
497-4349-6
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 380 V
Peak Reflow Temperature (C): 245
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