.9 W Other Function Transistors 232

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

2SA966-Y(TPE6)

Toshiba

PNP

SINGLE

NO

.9 W

1.5 A

1

Other Transistors

160

150 Cel

2SC5201(TPE6)

Toshiba

NPN

SINGLE

NO

.9 W

.05 A

1

Other Transistors

100

150 Cel

2SC2655-O(TPE6,F)

Toshiba

NPN

SINGLE

NO

.9 W

2 A

1

Other Transistors

70

150 Cel

MT3S20TU(TE85L)

Toshiba

NPN

SINGLE

YES

5000 MHz

.9 W

.08 A

1

Other Transistors

100

150 Cel

2SC2655-O(TPE6)

Toshiba

NPN

SINGLE

NO

.9 W

2 A

1

Other Transistors

70

150 Cel

MT3S113TU(TE85L)

Toshiba

NPN

SINGLE

YES

9000 MHz

.9 W

.1 A

1

Other Transistors

200

150 Cel

2SC2235-O(TPE6)

Toshiba

NPN

NO

.9 W

.8 A

Other Transistors

80

150 Cel

2SJ537(F)

Toshiba

P-CHANNEL

SINGLE

NO

.9 W

ENHANCEMENT MODE

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

2SD2088(TPE6)

Toshiba

NPN

DARLINGTON

NO

.9 W

2 A

Other Transistors

2000

150 Cel

2SC3328-O(TE6,F,M)

Toshiba

NPN

SINGLE

NO

.9 W

2 A

1

Other Transistors

70

150 Cel

2SA1315-O(TPE6,F)

Toshiba

PNP

SINGLE

NO

.9 W

2 A

1

Other Transistors

70

150 Cel

2SA1382(TPE6)

Toshiba

PNP

SINGLE

NO

.9 W

2 A

1

Other Transistors

150

150 Cel

2SA1680(TE6,F,M)

Toshiba

PNP

SINGLE

NO

.9 W

2 A

1

Other Transistors

120

150 Cel

2SA1761(TPE6)

Toshiba

PNP

SINGLE

NO

.9 W

3 A

1

Other Transistors

120

150 Cel

2SA1972(TE6,F,M)

Toshiba

PNP

SINGLE

NO

.9 W

.5 A

1

Other Transistors

140

150 Cel

2SA1160-B(TE6,F,M)

Toshiba

PNP

SINGLE

NO

.9 W

2 A

1

Other Transistors

200

150 Cel

2SA1315-Y(TPE6,F)

Toshiba

PNP

SINGLE

NO

.9 W

2 A

1

Other Transistors

120

150 Cel

2SA1315-O(TPE6)

Toshiba

PNP

SINGLE

NO

.9 W

2 A

1

Other Transistors

70

150 Cel

2SA1315-Y(TPE6)

Toshiba

PNP

SINGLE

NO

.9 W

2 A

1

Other Transistors

120

150 Cel

2SA1761(TPE6,F)

Toshiba

PNP

SINGLE

NO

.9 W

3 A

1

Other Transistors

120

150 Cel

2SB738C

Renesas Electronics

PNP

SINGLE

NO

80 MHz

.9 W

2 A

1

Other Transistors

160

150 Cel

2SJ386

Renesas Electronics

P-CHANNEL

SINGLE

NO

.9 W

ENHANCEMENT MODE

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

2SD789C

Renesas Electronics

NPN

SINGLE

NO

80 MHz

.9 W

1 A

1

Other Transistors

160

150 Cel

2SD667C

Renesas Electronics

NPN

SINGLE

NO

140 MHz

.9 W

1 A

1

Other Transistors

100

150 Cel

2SD974TZ-E

Renesas Electronics

NPN

SINGLE

NO

.9 W

1 A

1

Other Transistors

150

150 Cel

1

2SB739B

Renesas Electronics

PNP

SINGLE

NO

80 MHz

.9 W

2 A

1

Other Transistors

100

150 Cel

2SD667D

Renesas Electronics

NPN

SINGLE

NO

140 MHz

.9 W

1 A

1

Other Transistors

160

150 Cel

2SB738B

Renesas Electronics

PNP

SINGLE

NO

80 MHz

.9 W

2 A

1

Other Transistors

100

150 Cel

2SC4829C

Renesas Electronics

NPN

SINGLE

NO

800 MHz

.9 W

.2 A

1

Other Transistors

100

150 Cel

2SB647AC

Renesas Electronics

PNP

SINGLE

NO

140 MHz

.9 W

1 A

1

Other Transistors

100

150 Cel

2SD667AC

Renesas Electronics

NPN

SINGLE

NO

140 MHz

.9 W

1 A

1

Other Transistors

100

150 Cel

2SB647AB

Renesas Electronics

PNP

SINGLE

NO

140 MHz

.9 W

1 A

1

Other Transistors

60

150 Cel

2SB647C

Renesas Electronics

PNP

SINGLE

NO

140 MHz

.9 W

1 A

1

Other Transistors

100

150 Cel

2SD667B

Renesas Electronics

NPN

SINGLE

NO

140 MHz

.9 W

1 A

1

Other Transistors

60

150 Cel

2SD788DTZ-E

Renesas Electronics

NPN

SINGLE

NO

.9 W

2 A

1

Other Transistors

250

150 Cel

2SD788CTZ-E

Renesas Electronics

NPN

SINGLE

NO

.9 W

2 A

1

Other Transistors

160

150 Cel

2SC4693

Renesas Electronics

NPN

SINGLE

NO

1500 MHz

.9 W

.3 A

1

Other Transistors

50

150 Cel

2SC4829B

Renesas Electronics

NPN

SINGLE

NO

800 MHz

.9 W

.2 A

1

Other Transistors

60

150 Cel

2SD789E

Renesas Electronics

NPN

SINGLE

NO

80 MHz

.9 W

1 A

1

Other Transistors

400

150 Cel

2SA1193

Renesas Electronics

PNP

DARLINGTON

NO

.9 W

.5 A

Other Transistors

2000

150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.