1 W Other Function Transistors 693

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	JESD-609 Code	Peak Reflow Temperature (C)
BCX55-6	Infineon Technologies	NPN	SINGLE	YES	100 MHz	1 W	1 A		1		Other Transistors		40	140 Cel	Tin/Lead (Sn/Pb)		e0
IRF7756GTRPBF	Infineon Technologies	P-CHANNEL		YES		1 W		ENHANCEMENT MODE		4.3 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		4.3 A
BCX56-6	Infineon Technologies	NPN	SINGLE	YES	50 MHz	1 W	1 A		1		Other Transistors		40	140 Cel	Tin/Lead (Sn/Pb)		e0
BCX68-16TC	Diodes Incorporated	NPN	SINGLE	YES	100 MHz	1 W	1 A		1		Other Transistors		100	150 Cel
BCX68-16TA	Diodes Incorporated	NPN	SINGLE	YES	100 MHz	1 W	1 A		1		Other Transistors		100	150 Cel
BCX68TC	Diodes Incorporated	NPN	SINGLE	YES	100 MHz	1 W	1 A		1		Other Transistors		85	150 Cel
FCX604	Diodes Incorporated	NPN	DARLINGTON	YES	150 MHz	1 W	1.5 A				Other Transistors		2000	150 Cel				260
BCX68-25TC	Diodes Incorporated	NPN	SINGLE	YES	100 MHz	1 W	1 A		1		Other Transistors		160	150 Cel
8050B	Diodes Incorporated	NPN	SINGLE	NO	100 MHz	1 W	1.5 A		1		Other Transistors		85	150 Cel
FCX658ATC	Diodes Incorporated	NPN	SINGLE	YES	50 MHz	1 W	.5 A		1		Other Transistors		35	150 Cel				260
FCX5401	Diodes Incorporated	PNP	SINGLE	YES	200 MHz	1 W	.6 A		1		Other Transistors		60	150 Cel				260
FCX5550	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	1 W	.6 A		1		Other Transistors		60	150 Cel				260
ZTX1049ASTOA	Diodes Incorporated	NPN	SINGLE	NO		1 W	4 A		1		Other Transistors		300	200 Cel				260
ZTX1049ASTOB	Diodes Incorporated	NPN	SINGLE	NO		1 W	4 A		1		Other Transistors		300	200 Cel				260
2SC6034(TPF2,Q)	Toshiba	NPN	SINGLE	NO		1 W	1 A		1		Other Transistors		100	150 Cel
SSM6J410TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		1 W		ENHANCEMENT MODE	1	2.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2.1 A
SSM6J412TU(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		1 W		ENHANCEMENT MODE	1	4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		4 A
2SC3672-O(TPF2,F)	Toshiba	NPN	SINGLE	NO	50 MHz	1 W	.1 A		1		Other Transistors		50	150 Cel
2SC2881-Y(TE12L,CF)	Toshiba	NPN	SINGLE	YES		1 W	.8 A		1		Other Transistors		120	150 Cel
2SC6139(TPF2,F)	Toshiba	NPN	SINGLE	NO		1 W	1.5 A		1		Other Transistors		140	150 Cel
2SC3665-Y(TPF2)	Toshiba	NPN	SINGLE	NO		1 W	.8 A		1		Other Transistors		120	150 Cel
2SC3670-D(TPF2)	Toshiba	NPN	SINGLE	NO		1 W	2 A		1		Other Transistors		420	150 Cel
2SC3803-O(TE12L)	Toshiba	NPN	SINGLE	YES	100 MHz	1 W	.2 A		1		Other Transistors		70	150 Cel
SSM6J409TU(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		1 W		ENHANCEMENT MODE	1	9.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		9.5 A
2SC6034(TPF2)	Toshiba	NPN	SINGLE	NO		1 W	1 A		1		Other Transistors		100	150 Cel
2SC6139(TPF2,Q)	Toshiba	NPN	SINGLE	NO		1 W	1.5 A		1		Other Transistors		140	150 Cel
SSM3J129TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		1 W		ENHANCEMENT MODE	1	4.6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		4.6 A
SSM6J412TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		1 W		ENHANCEMENT MODE	1	4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		4 A
2SC3803-R(TE12L,F)	Toshiba	NPN	SINGLE	YES	100 MHz	1 W	.2 A		1		Other Transistors		40	150 Cel
2SC3668-O(TPF2)	Toshiba	NPN	SINGLE	NO		1 W	2 A		1		Other Transistors		70	150 Cel
2SA2061(TE85L)	Toshiba	PNP	SINGLE	YES		1 W	2.5 A		1		Other Transistors		200	150 Cel
2SC5930(TPF2,F)	Toshiba	NPN	SINGLE	NO		1 W	1 A		1		Other Transistors		30	150 Cel
2SC3803-Y(TE12L,F)	Toshiba	NPN	SINGLE	YES	100 MHz	1 W	.2 A		1		Other Transistors		120	150 Cel
2SA2061(TE85L,F)	Toshiba	PNP	SINGLE	YES		1 W	2.5 A		1		Other Transistors		200	150 Cel
2SC2881-Y(TE12L,C)	Toshiba	NPN	SINGLE	YES		1 W	.8 A		1		Other Transistors		120	150 Cel
2SC3670-B(TPF2)	Toshiba	NPN	SINGLE	NO		1 W	2 A		1		Other Transistors		200	150 Cel
2SC2824	Toshiba	NPN	SINGLE	NO	120 MHz	1 W	1 A		1		Other Transistors		80	150 Cel	Tin/Lead (Sn/Pb)		e0
2SC6033(TE85L)	Toshiba	NPN	SINGLE	YES		1 W	2.5 A		1		Other Transistors		250	150 Cel
2SC3669-O(TPF2)	Toshiba	NPN	SINGLE	NO		1 W	2 A		1		Other Transistors		70	150 Cel
2SC3665-O(TPF2,Q)	Toshiba	NPN	SINGLE	NO		1 W	.8 A		1		Other Transistors		80	150 Cel
2SC3665-O(TPF2,F)	Toshiba	NPN	SINGLE	NO		1 W	.8 A		1		Other Transistors		80	150 Cel
2SC5738(TE85L)	Toshiba	NPN	SINGLE	YES		1 W	3.5 A		1		Other Transistors		400	150 Cel
2SC5692(TE85L)	Toshiba	NPN	SINGLE	YES		1 W	2.5 A		1		Other Transistors		400	150 Cel
2SC3671-B(TPF2,F)	Toshiba	NPN	SINGLE	NO		1 W	5 A		1		Other Transistors		200	150 Cel
2SC3669-O(TPF2,F)	Toshiba	NPN	SINGLE	NO		1 W	2 A		1		Other Transistors		70	150 Cel
2SC3666-Y(TPF2)	Toshiba	NPN	SINGLE	NO		1 W	1 A		1		Other Transistors		160	150 Cel
2SC6139(TPF2)	Toshiba	NPN	SINGLE	NO		1 W	1.5 A		1		Other Transistors		140	150 Cel
SSM6J414TU(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		1 W		ENHANCEMENT MODE	1	6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		6 A

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.