1.25 W Other Function Transistors 41

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

SI2319DS-T1

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2.3 A

e0

SI2301DS

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2.3 A

e0

SI2301DS-T1

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.3 A

SI2301DS-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

2.3 A

1

e3

260

SI2333DS-T1

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

4.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4.1 A

e0

PBSM5240PFH,115

NXP Semiconductors

1.25 W

1.8 A

.31 V

2

Other Transistors

75

150 Cel

TIN

1

e3

30

260

PBSS5160TT/R

NXP Semiconductors

PNP

SINGLE

YES

150 MHz

1.25 W

1 A

1

Other Transistors

100

150 Cel

AF2301PWA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2.3 A

e0

AF2301PWLA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.3 A

30

260

AF2301PW

Diodes Incorporated

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2.3 A

e0

AF2301PWL

Diodes Incorporated

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.3 A

30

260

SSM3J321T(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

5.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.2 A

SSM3J02T(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

1.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

SSM3J307T(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

SSM3J14T(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.7 A

2SC5906(TE85L)

Toshiba

NPN

SINGLE

YES

1.25 W

4 A

1

Other Transistors

200

150 Cel

SSM3J326T(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

5.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.6 A

2SC5906(TE85L,F)

Toshiba

NPN

SINGLE

YES

1.25 W

4 A

1

Other Transistors

200

150 Cel

2SC5703(TE85L)

Toshiba

NPN

SINGLE

YES

1.25 W

4 A

1

Other Transistors

400

150 Cel

SSM3J307T(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

SSM3J326T(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

5.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.6 A

SSM3J321T(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

5.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.2 A

SSM3J14T(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.7 A

2SJ621-T2B-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

3.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.5 A

2SJ626-T2B-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

1.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

2SJ557A-T2B-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.5 A

2SJ624-L-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

2SJ621-L-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

3.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.5 A

2SJ690-T1B-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.5 A

2SJ557A-T2B-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.5 A

2SJ625-T2B-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

2SJ626-L-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

1.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

2SJ624-T2B-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

2SJ624-L-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

2SJ625-L-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

2SJ624-T2B-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

2SJ621-T2B-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

3.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.5 A

2SJ625-L-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

2SJ626-T2B-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

1.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

2SJ621-L-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

3.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.5 A

2SJ625-T2B-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.