2.5 W Other Function Transistors 76

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Drain Current (ID)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
TPCF8103(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES	2.5 W		ENHANCEMENT MODE	1	2.7 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	2.7 A
2SC1200	Toshiba	NPN	SINGLE		2.5 W	.18 A		1		Other Transistors			175 Cel
2SC6124(TE12L)	Toshiba	NPN	SINGLE	YES	2.5 W	2 A		1		Other Transistors		100	150 Cel
2SC5713(TE12L)	Toshiba	NPN	SINGLE	YES	2.5 W	4 A		1		Other Transistors		400	150 Cel
2SA2206(TE12L)	Toshiba	PNP	SINGLE	YES	2.5 W	2 A		1		Other Transistors		100	150 Cel
2SA2060(TE12L,F)	Toshiba	PNP	SINGLE	YES	2.5 W	2 A		1		Other Transistors		200	150 Cel
TPCF8105(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES	2.5 W		ENHANCEMENT MODE	1	6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	6 A
2SC5714(TE12L,F)	Toshiba	NPN	SINGLE	YES	2.5 W	4 A		1		Other Transistors		400	150 Cel
2SC5714(TE12L)	Toshiba	NPN	SINGLE	YES	2.5 W	4 A		1		Other Transistors		400	150 Cel
TPCF8101(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES	2.5 W		ENHANCEMENT MODE	1	6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	6 A
TTC013(TE12L,F)	Toshiba	NPN	SINGLE	YES	2.5 W	.5 A		1		Other Transistors		100	150 Cel
TPCF8103(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES	2.5 W		ENHANCEMENT MODE	1	2.7 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	2.7 A
TTC013(TE12L)	Toshiba	NPN	SINGLE	YES	2.5 W	.5 A		1		Other Transistors		100	150 Cel
2SA2059(TE12L)	Toshiba	PNP	SINGLE	YES	2.5 W	3 A		1		Other Transistors		200	150 Cel
TPCF8105(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES	2.5 W		ENHANCEMENT MODE	1	6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	6 A
TPCF8101(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES	2.5 W		ENHANCEMENT MODE	1	6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	6 A
2SC6124(TE12L,F)	Toshiba	NPN	SINGLE	YES	2.5 W	2 A		1		Other Transistors		100	150 Cel
2SC6125(TE12L)	Toshiba	NPN	SINGLE	YES	2.5 W	4 A		1		Other Transistors		180	150 Cel
SSM6J505NU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES	2.5 W		ENHANCEMENT MODE	1	12 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	12 A
2SD2686(TE12L)	Toshiba	NPN	2 BANKS, DARLINGTON	NO	2.5 W	1 A				Other Transistors		2000	150 Cel
2SC6126(TE12L,F)	Toshiba	NPN	SINGLE	YES	2.5 W	3 A		1		Other Transistors		250	150 Cel		30	260
2SC6125(TE12L,F)	Toshiba	NPN	SINGLE	YES	2.5 W	4 A		1		Other Transistors		180	150 Cel
2SC6126(TE12L)	Toshiba	NPN	SINGLE	YES	2.5 W	3 A		1		Other Transistors		250	150 Cel
UPA2733GR-E2-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES	2.5 W		ENHANCEMENT MODE	1	5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	5 A
NE651R479A-T1-A	Renesas Electronics	N-CHANNEL		YES	2.5 W					Other Transistors	JUNCTION		150 Cel
NE651R479A-A	Renesas Electronics	N-CHANNEL		YES	2.5 W					Other Transistors	JUNCTION		150 Cel
HAT1048R	Renesas Electronics	P-CHANNEL	SINGLE	YES	2.5 W		ENHANCEMENT MODE	1	16 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	16 A
SFM9110	Samsung	P-CHANNEL	SINGLE	YES	2.5 W		ENHANCEMENT MODE	1	1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	1 A

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.