YES Other Function Transistors 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

BFP193W-E6433

Infineon Technologies

NPN

SINGLE

YES

6000 MHz

.58 W

.08 A

1

Other Transistors

50

150 Cel

BC818K-40-E6433

Infineon Technologies

NPN

SINGLE

YES

.5 W

.5 A

1

Other Transistors

250

150 Cel

BFP540FESD-H6327

Infineon Technologies

NPN

SINGLE

YES

21000 MHz

.25 W

.08 A

1

Other Transistors

50

150 Cel

MATTE TIN

e3

BFN26-E6327

Infineon Technologies

NPN

SINGLE

YES

.36 W

.2 A

1

Other Transistors

30

150 Cel

1

260

BFN22

Infineon Technologies

NPN

SINGLE

YES

.15 W

.02 A

1

Other Transistors

50

150 Cel

Tin/Lead (Sn/Pb)

e0

BFQ645

Infineon Technologies

NPN

SINGLE

YES

.4 W

.04 A

1

Other Transistors

50

175 Cel

Tin/Lead (Sn/Pb)

e0

2N6619

Infineon Technologies

NPN

SINGLE

YES

3600 MHz

.2 W

.03 A

1

Other Transistors

25

125 Cel

Tin/Lead (Sn/Pb)

e0

IRFC9140R

Infineon Technologies

P-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

Other Transistors

METAL-OXIDE SEMICONDUCTOR

BFG135A-E6433

Infineon Technologies

NPN

SINGLE

YES

4500 MHz

1 W

.15 A

1

Other Transistors

80

150 Cel

BFS481-H6327

Infineon Technologies

NPN

YES

6000 MHz

.02 A

Other Transistors

50

150 Cel

MATTE TIN

e3

BSP51-E6433

Infineon Technologies

NPN

DARLINGTON

YES

1.5 W

1 A

Other Transistors

1000

150 Cel

Tin/Lead (Sn/Pb)

e0

BFQ194

Infineon Technologies

PNP

SINGLE

YES

.65 W

.1 A

1

Other Transistors

20

175 Cel

Tin/Lead (Sn/Pb)

e0

BC817K-16-E6433

Infineon Technologies

NPN

SINGLE

YES

.5 W

.5 A

1

Other Transistors

100

150 Cel

1

260

BF970

Infineon Technologies

PNP

SINGLE

YES

950 MHz

.16 W

.03 A

1

Other Transistors

25

150 Cel

BFR193-E6433

Infineon Technologies

NPN

SINGLE

YES

6000 MHz

.58 W

.08 A

1

Other Transistors

70

150 Cel

BC817K-25W-E6327

Infineon Technologies

NPN

SINGLE

YES

.25 W

.5 A

1

Other Transistors

160

150 Cel

1

260

BF775A

Infineon Technologies

NPN

SINGLE

YES

4200 MHz

.28 W

.03 A

1

Other Transistors

50

150 Cel

Tin/Lead (Sn/Pb)

e0

2N6620

Infineon Technologies

NPN

SINGLE

YES

3600 MHz

.2 W

.03 A

1

Other Transistors

25

125 Cel

Tin/Lead (Sn/Pb)

e0

BSB029P03NX3G

Infineon Technologies

P-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

137 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

137 A

BFS17W-E6433

Infineon Technologies

NPN

SINGLE

YES

1000 MHz

.28 W

.025 A

1

Other Transistors

20

150 Cel

BFN26-E6433

Infineon Technologies

NPN

SINGLE

YES

.36 W

.2 A

1

Other Transistors

30

150 Cel

1

260

BFP183W-E6433

Infineon Technologies

NPN

SINGLE

YES

6000 MHz

.45 W

.065 A

1

Other Transistors

50

150 Cel

IRFR9015

Infineon Technologies

P-CHANNEL

SINGLE

YES

25 W

ENHANCEMENT MODE

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

4.5 A

BFP181R-E6327

Infineon Technologies

NPN

SINGLE

YES

6000 MHz

.175 W

.02 A

1

Other Transistors

50

150 Cel

BFP420F-E6327

Infineon Technologies

NPN

SINGLE

YES

18000 MHz

.16 W

.035 A

1

Other Transistors

50

150 Cel

1

260

BCM856S-E6433

Infineon Technologies

PNP

YES

.25 W

.1 A

Other Transistors

200

150 Cel

BFR740L3RH-E6327

Infineon Technologies

NPN

SINGLE

YES

42000 MHz

.16 W

.03 A

UNSPECIFIED

NO LEAD

RECTANGULAR

1

X BAND

3

CHIP CARRIER

Other Transistors

160

150 Cel

.15 pF

SILICON GERMANIUM

4 V

GOLD

BOTTOM

R-XBCC-N3

1

COLLECTOR

HIGH RELIABILITY, LOW NOISE

e4

260

BFY193C(H)

Infineon Technologies

NPN

SINGLE

YES

6500 MHz

.58 W

.08 A

1

Other Transistors

50

200 Cel

BFP520F-E6327

Infineon Technologies

NPN

SINGLE

YES

.1 W

.04 A

1

Other Transistors

70

150 Cel

1

260

SXTA43

Infineon Technologies

NPN

SINGLE

YES

50 MHz

1 W

.5 A

1

Other Transistors

25

150 Cel

Tin/Lead (Sn/Pb)

e0

BC817K-16W-E6327

Infineon Technologies

NPN

SINGLE

YES

.5 W

.5 A

1

Other Transistors

100

150 Cel

BFS483-E6433

Infineon Technologies

NPN

YES

6000 MHz

.45 W

.065 A

Other Transistors

50

150 Cel

BFN16E6327

Infineon Technologies

NPN

SINGLE

YES

1 W

.2 A

1

Other Transistors

40

150 Cel

TIN LEAD

1

e0

235

SXT2907A

Infineon Technologies

NPN

SINGLE

YES

200 MHz

1 W

.6 A

1

Other Transistors

100

150 Cel

IRHNJ598130

Infineon Technologies

P-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

12.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

12.5 A

e0

BFR193F-E6327

Infineon Technologies

NPN

SINGLE

YES

6000 MHz

.58 W

.08 A

1

Other Transistors

70

150 Cel

1

260

BFQ17P

Infineon Technologies

NPN

SINGLE

YES

1400 MHz

1 W

.3 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BF772-E6327

Infineon Technologies

NPN

SINGLE

YES

6000 MHz

.58 W

.08 A

1

Other Transistors

50

150 Cel

IRF9383MPBF

Infineon Technologies

P-CHANNEL

SINGLE

YES

113 W

ENHANCEMENT MODE

1

22 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

BFS17S-E6433

Infineon Technologies

NPN

YES

1000 MHz

.28 W

.025 A

Other Transistors

20

150 Cel

BF850BF-E6327

Infineon Technologies

NPN

SINGLE

YES

.25 W

.1 A

1

Other Transistors

200

150 Cel

BF799W-E6433

Infineon Technologies

NPN

SINGLE

YES

.28 W

.035 A

1

Other Transistors

35

BFT75

Infineon Technologies

NPN

SINGLE

YES

.25 W

50 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BFR193F-E6433

Infineon Technologies

NPN

SINGLE

YES

6000 MHz

.58 W

.08 A

1

Other Transistors

70

150 Cel

BFP405-E6433

Infineon Technologies

NPN

SINGLE

YES

18000 MHz

.055 W

.012 A

1

Other Transistors

50

150 Cel

1

260

BF799W-E6327

Infineon Technologies

NPN

SINGLE

YES

.28 W

.035 A

1

Other Transistors

35

1

260

BCM856S-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

Other Transistors

200

150 Cel

1

260

BFQ182

Infineon Technologies

NPN

SINGLE

YES

.25 W

.035 A

1

Other Transistors

50

175 Cel

Tin/Lead (Sn/Pb)

e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.