Diodes Incorporated Other Function Transistors 359

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

AF8958CS

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

YES

2.1 W

ENHANCEMENT MODE

5.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

5.2 A

e0

MMSTA14

Diodes Incorporated

NPN

DARLINGTON

YES

125 MHz

.2 W

.3 A

Other Transistors

20000

150 Cel

Tin/Lead (Sn/Pb)

e0

ZXM41N10FTC

Diodes Incorporated

MATTE TIN

1

e3

40

260

AF4905PSLA

Diodes Incorporated

P-CHANNEL

YES

3.1 W

ENHANCEMENT MODE

11 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

260

AF4409PSLA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

3.1 W

ENHANCEMENT MODE

1

10.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

10.2 A

260

DDTA144EE

Diodes Incorporated

AF4409PS

Diodes Incorporated

P-CHANNEL

SINGLE

YES

3.1 W

ENHANCEMENT MODE

1

10.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

10.2 A

e0

ZXMP2120FFTC

Diodes Incorporated

IMBTA55

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

.31 W

1

Other Transistors

50

150 Cel

Tin/Lead (Sn/Pb)

e0

AF4811PSLA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

3.1 W

ENHANCEMENT MODE

1

9.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

9.5 A

260

IMBT3903

Diodes Incorporated

NPN

SINGLE

YES

250 MHz

.31 W

.1 A

1

Other Transistors

50

150 Cel

Tin/Lead (Sn/Pb)

e0

DDTA114YUA

Diodes Incorporated

PN2221

Diodes Incorporated

NPN

SINGLE

NO

250 MHz

.6 W

.8 A

1

Other Transistors

25

150 Cel

LT2N7002D

Diodes Incorporated

LTP540

Diodes Incorporated

BC807A

Diodes Incorporated

MMBT123S

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

.35 W

1 A

1

Other Transistors

150

150 Cel

Tin/Lead (Sn/Pb)

e0

BSS84TC

Diodes Incorporated

P-CHANNEL

SINGLE

YES

.25 W

ENHANCEMENT MODE

1

.13 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

.13 A

1

e3

30

260

BC847BLP4

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

200

150 Cel

NICKEL PALLADIUM GOLD

1

e4

260

BC807B

Diodes Incorporated

BC857BV-7-F

Diodes Incorporated

MATTE TIN

e3

260

BC858BQ-7-F

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

.3 W

.1 A

1

Other Transistors

220

150 Cel

PN2221A

Diodes Incorporated

NPN

SINGLE

NO

250 MHz

.6 W

.8 A

1

Other Transistors

25

150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.