Diodes Incorporated Other Function Transistors 359

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

AF4953PSL

Diodes Incorporated

P-CHANNEL

YES

2.1 W

ENHANCEMENT MODE

5.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.2 A

260

DDTC124XCA

Diodes Incorporated

AF4953PSA

Diodes Incorporated

P-CHANNEL

YES

2.1 W

ENHANCEMENT MODE

5.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

5.2 A

e0

DDTC124EUA

Diodes Incorporated

AF86N03D

Diodes Incorporated

DDA122LU-13-F

Diodes Incorporated

260

2DA1774R

Diodes Incorporated

PNP

SINGLE

YES

.15 W

.15 A

1

Other Transistors

180

150 Cel

Tin/Lead (Sn/Pb)

e0

AF4835PSA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

3.1 W

ENHANCEMENT MODE

1

9.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

9.5 A

e0

AF8958CSL

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

YES

2.1 W

ENHANCEMENT MODE

5.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.2 A

260

DDC144EU

Diodes Incorporated

DCX144EU

Diodes Incorporated

DDTC124ECA

Diodes Incorporated

FCX604

Diodes Incorporated

NPN

DARLINGTON

YES

150 MHz

1 W

1.5 A

Other Transistors

2000

150 Cel

260

IMBT4402

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

.31 W

.6 A

1

Other Transistors

50

150 Cel

Tin/Lead (Sn/Pb)

e0

BCX68-25TC

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

1 W

1 A

1

Other Transistors

160

150 Cel

AF86N03DA

Diodes Incorporated

DDTA143ZKA

Diodes Incorporated

DDTA143ECA

Diodes Incorporated

FMMT717-13

Diodes Incorporated

PNP

SINGLE

YES

1

Other Transistors

150 Cel

FMMT618TC

Diodes Incorporated

MATTE TIN

1

e3

30

260

DDTA124ECA

Diodes Incorporated

DDTA144ECA

Diodes Incorporated

AF1333PUL

Diodes Incorporated

P-CHANNEL

SINGLE

YES

.35 W

ENHANCEMENT MODE

1

.55 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.55 A

30

260

DDC114EU

Diodes Incorporated

AF4409PSL

Diodes Incorporated

P-CHANNEL

SINGLE

YES

3.1 W

ENHANCEMENT MODE

1

10.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

10.2 A

260

AF4901PSLA

Diodes Incorporated

P-CHANNEL

YES

3.1 W

ENHANCEMENT MODE

9.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

9.5 A

260

APT13003ZTR-E1

Diodes Incorporated

8050B

Diodes Incorporated

NPN

SINGLE

NO

100 MHz

1 W

1.5 A

1

Other Transistors

85

150 Cel

AF8510CSA

Diodes Incorporated

DDTC124XUA

Diodes Incorporated

DMDT9922

Diodes Incorporated

PNP

YES

.2 W

.1 A

Other Transistors

300

125 Cel

DDTC144EKA

Diodes Incorporated

AF4935PSL

Diodes Incorporated

P-CHANNEL

YES

2 W

ENHANCEMENT MODE

8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

260

ZXTN19055DZ

Diodes Incorporated

MATTE TIN

e3

260

DCX114TU

Diodes Incorporated

FCX658ATC

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 W

.5 A

1

Other Transistors

35

150 Cel

260

FMMT717-7

Diodes Incorporated

PNP

SINGLE

YES

1

Other Transistors

150 Cel

FCX1047ATC

Diodes Incorporated

MATTE TIN

e3

260

AF4905PS

Diodes Incorporated

P-CHANNEL

YES

3.1 W

ENHANCEMENT MODE

11 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

11 A

e0

ZXMC10A816N8

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

YES

2.6 W

ENHANCEMENT MODE

2.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

2.4 A

1

e3

260

DDTC123ECA

Diodes Incorporated

MMSTA64

Diodes Incorporated

PNP

DARLINGTON

YES

125 MHz

.2 W

.5 A

Other Transistors

10000

150 Cel

Tin/Lead (Sn/Pb)

e0

DDTC144EUA

Diodes Incorporated

IPS2907A

Diodes Incorporated

IPS2221

Diodes Incorporated

9014B

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

.45 W

.1 A

1

Other Transistors

100

150 Cel

DDA143TU

Diodes Incorporated

DDTC124XE

Diodes Incorporated

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.