Diodes Incorporated Other Function Transistors 359

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

DDTA143ZE

Diodes Incorporated

FCX5550

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

1 W

.6 A

1

Other Transistors

60

150 Cel

260

9012A

Diodes Incorporated

FMMT723-13

Diodes Incorporated

PNP

SINGLE

YES

1

Other Transistors

150 Cel

AF4502CSL

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

YES

2.1 W

ENHANCEMENT MODE

8.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

8.5 A

260

AF9515PSA

Diodes Incorporated

ZTX688BSTOB

Diodes Incorporated

IMBT3904

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.31 W

.1 A

1

Other Transistors

100

150 Cel

Tin/Lead (Sn/Pb)

e0

IPS2222

Diodes Incorporated

DTA143XE-7-F

Diodes Incorporated

260

DDTA114EE

Diodes Incorporated

AF85N08T

Diodes Incorporated

DDTA114YCA

Diodes Incorporated

150 Cel

-55 Cel

9014A

Diodes Incorporated

NPN

SINGLE

NO

150 MHz

.45 W

.1 A

1

Other Transistors

60

150 Cel

FCX718TC

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

2 W

2.5 A

1

Other Transistors

15

150 Cel

AF4825PSLA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

3.1 W

ENHANCEMENT MODE

1

11.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

11.5 A

260

FMMT718-13

Diodes Incorporated

PNP

SINGLE

YES

1

Other Transistors

150 Cel

Matte Tin (Sn)

1

e3

AF4415PSL

Diodes Incorporated

P-CHANNEL

SINGLE

YES

3.1 W

ENHANCEMENT MODE

1

13.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

13.5 A

260

AF9901MSA

Diodes Incorporated

AF8958CSLA

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

YES

2.1 W

ENHANCEMENT MODE

5.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.2 A

260

DDTC114TE

Diodes Incorporated

ZXTDBM832TC

Diodes Incorporated

NPN

YES

100 MHz

3 W

4.5 A

Other Transistors

100

150 Cel

260

DDTA114YE

Diodes Incorporated

AF4811PS

Diodes Incorporated

P-CHANNEL

SINGLE

YES

3.1 W

ENHANCEMENT MODE

1

9.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

9.5 A

e0

MMDT4126

Diodes Incorporated

PNP

YES

250 MHz

.2 W

.2 A

Other Transistors

60

150 Cel

Tin/Lead (Sn/Pb)

e0

DDTA143ZUA

Diodes Incorporated

ZXTN07045EFFTC

Diodes Incorporated

MATTE TIN

e3

260

DDTC143ECA

Diodes Incorporated

AF4407PSLA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

3.1 W

ENHANCEMENT MODE

1

15 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

15 A

260

A1015

Diodes Incorporated

PNP

SINGLE

1

Other Transistors

150

DDA142TU-13-F

Diodes Incorporated

260

AF4835PSL

Diodes Incorporated

P-CHANNEL

SINGLE

YES

3.1 W

ENHANCEMENT MODE

1

9.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

9.5 A

260

MMSTA92

Diodes Incorporated

PNP

SINGLE

50 MHz

.2 W

.1 A

1

Other Transistors

25

150 Cel

Tin/Lead (Sn/Pb)

e0

AF70N02D

Diodes Incorporated

FMMT734-13

Diodes Incorporated

PNP

DARLINGTON

YES

Other Transistors

150 Cel

ZTX1049ASTOA

Diodes Incorporated

NPN

SINGLE

NO

1 W

4 A

1

Other Transistors

300

200 Cel

260

DDTC143TUA

Diodes Incorporated

DDTA124EUA

Diodes Incorporated

A42

Diodes Incorporated

NPN

SINGLE

1

Other Transistors

60

AF4901PS

Diodes Incorporated

P-CHANNEL

YES

3.1 W

ENHANCEMENT MODE

9.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

9.5 A

e0

9012B

Diodes Incorporated

IPS2222A

Diodes Incorporated

ZTX1049ASTOB

Diodes Incorporated

NPN

SINGLE

NO

1 W

4 A

1

Other Transistors

300

200 Cel

260

IMBT2907

Diodes Incorporated

PNP

SINGLE

YES

200 MHz

.31 W

1

Other Transistors

100

150 Cel

Tin/Lead (Sn/Pb)

e0

9013B

Diodes Incorporated

AF4825PSA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

3.1 W

ENHANCEMENT MODE

1

11.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

11.5 A

e0

APT13003BZTR-E1

Diodes Incorporated

AF40P03D

Diodes Incorporated

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.