Infineon Technologies Other Function Transistors 662

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

CFY12

Infineon Technologies

N-CHANNEL

.1 A

Other Transistors

METAL SEMICONDUCTOR

.5 W

125 Cel

.1 A

BFP520F-E6327

Infineon Technologies

NPN

SINGLE

YES

.1 W

.04 A

1

Other Transistors

70

150 Cel

1

260

BD978

Infineon Technologies

PNP

SINGLE

NO

200 MHz

3.6 W

1 A

1

Other Transistors

140 Cel

Tin/Lead (Sn/Pb)

e0

SXTA43

Infineon Technologies

NPN

SINGLE

YES

50 MHz

1 W

.5 A

1

Other Transistors

25

150 Cel

Tin/Lead (Sn/Pb)

e0

BC817K-16W-E6327

Infineon Technologies

NPN

SINGLE

YES

.5 W

.5 A

1

Other Transistors

100

150 Cel

BFS483-E6433

Infineon Technologies

NPN

YES

6000 MHz

.45 W

.065 A

Other Transistors

50

150 Cel

IRFF9022

Infineon Technologies

P-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

5.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

5.6 A

e0

AC121IV

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.3 A

1

Other Transistors

45

100 Cel

Tin/Lead (Sn/Pb)

e0

ASY70

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.9 W

.3 A

1

Other Transistors

80

100 Cel

Tin/Lead (Sn/Pb)

e0

BDW25-10

Infineon Technologies

NPN

SINGLE

NO

30 MHz

26 W

5 A

1

Other Transistors

63

175 Cel

Tin/Lead (Sn/Pb)

e0

BCY65EVIII

Infineon Technologies

NPN

SINGLE

NO

250 MHz

1 W

.2 A

1

Other Transistors

175 Cel

Tin/Lead (Sn/Pb)

e0

CFY18-23

Infineon Technologies

N-CHANNEL

.1 A

Other Transistors

METAL SEMICONDUCTOR

.3 W

Tin/Lead (Sn/Pb)

.1 A

e0

IRLC9024N

Infineon Technologies

P-CHANNEL

SINGLE

ENHANCEMENT MODE

1

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

BFY640-02

Infineon Technologies

NPN

SINGLE

36000 MHz

.2 W

.05 A

1

Other Transistors

135

175 Cel

ASY70V

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.3 A

1

Other Transistors

75

150 Cel

Tin/Lead (Sn/Pb)

e0

BF849

Infineon Technologies

PNP

SINGLE

NO

90 MHz

1.8 W

5 A

1

Other Transistors

25

175 Cel

Tin/Lead (Sn/Pb)

e0

BF506

Infineon Technologies

PNP

SINGLE

NO

.35 W

.05 A

1

Other Transistors

25

150 Cel

Tin/Lead (Sn/Pb)

e0

BFN16E6327

Infineon Technologies

NPN

SINGLE

YES

1 W

.2 A

1

Other Transistors

40

150 Cel

TIN LEAD

1

e0

235

IRFF9012

Infineon Technologies

P-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

3.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

3.4 A

e0

SXT2907A

Infineon Technologies

NPN

SINGLE

YES

200 MHz

1 W

.6 A

1

Other Transistors

100

150 Cel

IRHNJ598130

Infineon Technologies

P-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

12.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

12.5 A

e0

BSY58

Infineon Technologies

NPN

SINGLE

NO

400 MHz

.9 W

.6 A

1

Other Transistors

42

175 Cel

Tin/Lead (Sn/Pb)

e0

BD619

Infineon Technologies

NPN

SINGLE

NO

3 MHz

15 W

4 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

AC121V

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.3 A

1

Other Transistors

75

100 Cel

Tin/Lead (Sn/Pb)

e0

BD827-6

Infineon Technologies

NPN

SINGLE

NO

50 MHz

8 W

2 A

1

Other Transistors

125 Cel

BC413

Infineon Technologies

NPN

SINGLE

NO

.35 W

.1 A

1

Other Transistors

180

150 Cel

BFR193F-E6327

Infineon Technologies

NPN

SINGLE

YES

6000 MHz

.58 W

.08 A

1

Other Transistors

70

150 Cel

1

260

BD644

Infineon Technologies

PNP

DARLINGTON

NO

100 MHz

62.5 W

8 A

Other Transistors

750

150 Cel

Tin/Lead (Sn/Pb)

e0

BDY12-6

Infineon Technologies

NPN

SINGLE

NO

70 MHz

26 W

3 A

1

Other Transistors

40

175 Cel

Tin/Lead (Sn/Pb)

e0

BFQ17P

Infineon Technologies

NPN

SINGLE

YES

1400 MHz

1 W

.3 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BF772-E6327

Infineon Technologies

NPN

SINGLE

YES

6000 MHz

.58 W

.08 A

1

Other Transistors

50

150 Cel

IRF9383MPBF

Infineon Technologies

P-CHANNEL

SINGLE

YES

113 W

ENHANCEMENT MODE

1

22 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

BFS17S-E6433

Infineon Technologies

NPN

YES

1000 MHz

.28 W

.025 A

Other Transistors

20

150 Cel

BF850BF-E6327

Infineon Technologies

NPN

SINGLE

YES

.25 W

.1 A

1

Other Transistors

200

150 Cel

BF799W-E6433

Infineon Technologies

NPN

SINGLE

YES

.28 W

.035 A

1

Other Transistors

35

BFT75

Infineon Technologies

NPN

SINGLE

YES

.25 W

50 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BFR193F-E6433

Infineon Technologies

NPN

SINGLE

YES

6000 MHz

.58 W

.08 A

1

Other Transistors

70

150 Cel

BC202

Infineon Technologies

PNP

SINGLE

NO

100 MHz

.26 W

.05 A

1

Other Transistors

125 Cel

Tin/Lead (Sn/Pb)

e0

BFP405-E6433

Infineon Technologies

NPN

SINGLE

YES

18000 MHz

.055 W

.012 A

1

Other Transistors

50

150 Cel

1

260

BF799W-E6327

Infineon Technologies

NPN

SINGLE

YES

.28 W

.035 A

1

Other Transistors

35

1

260

BCM856S-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

Other Transistors

200

150 Cel

1

260

BSM75GAL120D

Infineon Technologies

NO

625 W

75 A

Other Transistors

2N6844

Infineon Technologies

P-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

3.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

3.5 A

e0

ASY70IV

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.3 A

1

Other Transistors

45

150 Cel

Tin/Lead (Sn/Pb)

e0

BDY12-16

Infineon Technologies

NPN

SINGLE

NO

70 MHz

26 W

3 A

1

Other Transistors

100

175 Cel

Tin/Lead (Sn/Pb)

e0

BFQ182

Infineon Technologies

NPN

SINGLE

YES

.25 W

.035 A

1

Other Transistors

50

175 Cel

Tin/Lead (Sn/Pb)

e0

BCY77VII

Infineon Technologies

PNP

SINGLE

NO

180 MHz

1 W

.1 A

1

Other Transistors

175 Cel

Tin/Lead (Sn/Pb)

e0

BDX28-16

Infineon Technologies

PNP

SINGLE

NO

50 MHz

40 W

5 A

1

Other Transistors

100

175 Cel

Tin/Lead (Sn/Pb)

e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.