Infineon Technologies Other Function Transistors 662

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Manufacturers (1)
    • Infineon Technologies
    • Acrian
    • Allegro MicroSystems
    • Alpha & Omega Semiconductor
    • Analog Devices
    • Bourns
    • Broadcom
    • Calogic
    • Central Semiconductor
    • Continental Device India
    • Digitron Semiconductors
    • Diodes Incorporated
    • Diotec Semiconductor Ag
    • Fairchild Semiconductor
    • Forward International Electronics
    • Fujitsu
    • General Electric Solid State
    • Gpd Optoelectronics
    • Harris Semiconductor
    • Inchange Semiconductor
    • International Rectifier
    • Jiangsu Changjiang Electronics Technology
    • Kodenshi Auk
    • Linear Integrated Systems
    • Micro Commercial Components
    • Microchip Technology
    • Microsemi
    • Micross Components
    • Mospec Semiconductor
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • Nte Electronics
    • Onsemi
    • Panjit International
    • Philips Semiconductors
    • Plessey Semiconductors Discrete Components Div
    • ROHM
    • Rectron
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Sanken Electric
    • Secos
    • Semiconductors
    • Semitronics
    • Shantou Huashan Electronic Devices
    • Solitron Devices
    • Sumitomo Electric Device Innovations Usa
    • TE Connectivity
    • Taiwan Semiconductor
    • Texas Instruments
    • Thomson Consumer Electronics
    • Toshiba
    • Tt Electronics Plc
    • Unisonic Technologies
    • Vishay Intertechnology
    • Weitron Technology
    • Yangzhou Yangjie Electronics
    • Zetex Plc
Polarity or Channel Type
    • N-CHANNEL
    • N-CHANNEL AND P-CHANNEL
    • NPN
    • NPN AND PNP
    • P-CHANNEL
    • PNP
Configuration
    • 2 BANKS, DARLINGTON
    • DARLINGTON
    • SINGLE
Surface Mount
    • NO
    • YES
Nominal Transition Frequency (fT)
    • .004 MHz
    • .006 MHz
    • .0066 MHz
    • .02 MHz
    • .03 MHz
    • .05 MHz
    • .075 MHz
    • .08 MHz
    • .09 MHz
    • .2 MHz
    • .22 MHz
    • .25 MHz
    • .3 MHz
    • .35 MHz
    • .4 MHz
    • .5 MHz
    • .7 MHz
    • .75 MHz
    • .8 MHz
    • 1 MHz
    • 1.2 MHz
    • 1.3 MHz
    • 1.5 MHz
    • 1.6 MHz
    • 1.7 MHz
    • 10 MHz
    • 100 MHz
    • 1000 MHz
    • 10000 MHz
    • 102 MHz
    • 10500 MHz
    • 110 MHz
    • 1100 MHz
    • 11000 MHz
    • 11500 MHz
    • 12 MHz
    • 120 MHz
    • 1200 MHz
    • 12000 MHz
    • 125 MHz
    • 12500 MHz
    • 130 MHz
    • 1300 MHz
    • 13000 MHz
    • 135 MHz
    • 14 MHz
    • 140 MHz
    • 1400 MHz
    • 14000 MHz
    • 145 MHz
    • 15 MHz
    • 150 MHz
    • 1500 MHz
    • 15000 MHz
    • 16 MHz
    • 160 MHz
    • 1600 MHz
    • 16000 MHz
    • 17 MHz
    • 170 MHz
    • 1700 MHz
    • 17000 MHz
    • 175 MHz
    • 18 MHz
    • 180 MHz
    • 1800 MHz
    • 18000 MHz
    • 190 MHz
    • 2 MHz
    • 2.4 MHz
    • 2.5 MHz
    • 20 MHz
    • 200 MHz
    • 2000 MHz
    • 20000 MHz
    • 210 MHz
    • 21000 MHz
    • 220 MHz
    • 2200 MHz
    • 22000 MHz
    • 230 MHz
    • 24 MHz
    • 2400 MHz
    • 245 MHz
    • 25 MHz
    • 250 MHz
    • 2500 MHz
    • 260 MHz
    • 275 MHz
    • 280 MHz
    • 2800 MHz
    • 285 MHz
    • 3 MHz
    • 3.5 MHz
    • 30 MHz
    • 300 MHz
    • 3000 MHz
    • 30000 MHz
    • 320 MHz
    • 32000 MHz
    • 34 MHz
    • 3400 MHz
    • 350 MHz
    • 3500 MHz
    • 360 MHz
    • 3600 MHz
    • 36000 MHz
    • 380 MHz
    • 4 MHz
    • 4.3 MHz
    • 4.7 MHz
    • 40 MHz
    • 400 MHz
    • 4000 MHz
    • 42 MHz
    • 4200 MHz
    • 42000 MHz
    • 45 MHz
    • 450 MHz
    • 4500 MHz
    • 470 MHz
    • 4700 MHz
    • 5 MHz
    • 5.6 MHz
    • 50 MHz
    • 500 MHz
    • 5000 MHz
    • 5100 MHz
    • 55 MHz
    • 550 MHz
    • 5500 MHz
    • 580 MHz
    • 5800 MHz
    • 6 MHz
    • 6.5 MHz
    • 60 MHz
    • 600 MHz
    • 6000 MHz
    • 65 MHz
    • 650 MHz
    • 6500 MHz
    • 66 MHz
    • 675 MHz
    • 69 MHz
    • 7 MHz
    • 7.2 MHz
    • 7.5 MHz
    • 70 MHz
    • 700 MHz
    • 7000 MHz
    • 75 MHz
    • 750 MHz
    • 7500 MHz
    • 770 MHz
    • 78 MHz
    • 8 MHz
    • 80 MHz
    • 800 MHz
    • 8000 MHz
    • 820 MHz
    • 836 MHz
    • 85 MHz
    • 8500 MHz
    • 86 MHz
    • 9 MHz
    • 90 MHz
    • 900 MHz
    • 9000 MHz
    • 940 MHz
    • 95 MHz
    • 950 MHz
    • 9500 MHz
Maximum Power Dissipation (Abs)
    • .004 W
    • .02 W
    • .025 W
    • .03 W
    • .035 W
    • .036 W
    • .039 W
    • .04 W
    • .05 W
    • .054 W
    • .055 W
    • .06 W
    • .065 W
    • .0675 W
    • .075 W
    • .08 W
    • .09 W
    • .1 W
    • .105 W
    • .11 W
    • .115 W
    • .12 W
    • .125 W
    • .13 W
    • .135 W
    • .14 W
    • .15 W
    • .16 W
    • .162 W
    • .165 W
    • .17 W
    • .171 W
    • .175 W
    • .18 W
    • .185 W
    • .19 W
    • .2 W
    • .205 W
    • .21 W
    • .22 W
    • .225 W
    • .23 W
    • .24 W
    • .25 W
    • .26 W
    • .27 W
    • .28 W
    • .29 W
    • .3 W
    • .31 W
    • .32 W
    • .325 W
    • .33 W
    • .337 W
    • .345 W
    • .35 W
    • .36 W
    • .375 W
    • .38 W
    • .386 W
    • .39 W
    • .4 W
    • .41 W
    • .415 W
    • .42 W
    • .425 W
    • .43 W
    • .445 W
    • .45 W
    • .48 W
    • .5 W
    • .515 W
    • .55 W
    • .56 W
    • .57 W
    • .58 W
    • .59 W
    • .6 W
    • .62 W
    • .625 W
    • .63 W
    • .65 W
    • .66 W
    • .68 W
    • .69 W
    • .7 W
    • .715 W
    • .725 W
    • .73 W
    • .735 W
    • .75 W
    • .76 W
    • .8 W
    • .83 W
    • .85 W
    • .87 W
    • .88 W
    • .9 W
    • .96 W
    • 1 W
    • 1.09 W
    • 1.1 W
    • 1.15 W
    • 1.17 W
    • 1.2 W
    • 1.25 W
    • 1.28 W
    • 1.3 W
    • 1.35 W
    • 1.38 W
    • 1.4 W
    • 1.42 W
    • 1.45 W
    • 1.48 W
    • 1.5 W
    • 1.51 W
    • 1.56 W
    • 1.6 W
    • 1.65 W
    • 1.68 W
    • 1.7 W
    • 1.75 W
    • 1.77 W
    • 1.8 W
    • 1.9 W
    • 10 W
    • 100 W
    • 1000 W
    • 11 W
    • 11.7 W
    • 110 W
    • 1100 W
    • 113 W
    • 114 W
    • 115 W
    • 117 W
    • 12 W
    • 12.5 W
    • 120 W
    • 1200 W
    • 125 W
    • 13 W
    • 130 W
    • 132 W
    • 136 W
    • 140 W
    • 145 W
    • 15 W
    • 150 W
    • 16 W
    • 160 W
    • 17 W
    • 170 W
    • 175 W
    • 176 W
    • 18 W
    • 180 W
    • 187 W
    • 19 W
    • 2 W
    • 2.01 W
    • 2.1 W
    • 2.2 W
    • 2.25 W
    • 2.3 W
    • 2.4 W
    • 2.5 W
    • 2.6 W
    • 2.8 W
    • 2.9 W
    • 20 W
    • 200 W
    • 21 W
    • 22 W
    • 220 W
    • 23 W
    • 233 W
    • 24 W
    • 25 W
    • 250 W
    • 26 W
    • 27 W
    • 28 W
    • 29 W
    • 290 W
    • 292 W
    • 3 W
    • 3.1 W
    • 3.3 W
    • 3.5 W
    • 3.57 W
    • 3.6 W
    • 3.7 W
    • 3.8 W
    • 3.9 W
    • 30 W
    • 300 W
    • 31 W
    • 32 W
    • 320 W
    • 33 W
    • 35 W
    • 36 W
    • 37 W
    • 375 W
    • 38 W
    • 39 W
    • 390 W
    • 4 W
    • 4.025 W
    • 4.03 W
    • 4.15 W
    • 4.4 W
    • 4.6 W
    • 4.8 W
    • 40 W
    • 400 W
    • 41 W
    • 41.5 W
    • 42 W
    • 44 W
    • 45 W
    • 450 W
    • 46 W
    • 46.8 W
    • 49 W
    • 5 W
    • 5.3 W
    • 5.4 W
    • 5.5 W
    • 5.68 W
    • 5.8 W
    • 50 W
    • 52 W
    • 54 W
    • 55 W
    • 56 W
    • 57 W
    • 57.2 W
    • 583 W
    • 6 W
    • 6.25 W
    • 6.9 W
    • 60 W
    • 62 W
    • 62.5 W
    • 620 W
    • 625 W
    • 63 W
    • 65 W
    • 66 W
    • 67 W
    • 68 W
    • 7 W
    • 7.4 W
    • 7.5 W
    • 70 W
    • 71 W
    • 75 W
    • 770 W
    • 78 W
    • 8 W
    • 8.3 W
    • 8.33 W
    • 8.5 W
    • 8.7 W
    • 8.8 W
    • 80 W
    • 83 W
    • 85 W
    • 87 W
    • 88 W
    • 9 W
    • 9.7 W
    • 90 W
    • 91 W
    • 95 W
Maximum Collector Current (IC)
    • .000001 A
    • .000003 A
    • .00125 A
    • .002 A
    • .0025 A
    • .003 A
    • .005 A
    • .0065 A
    • .007 A
    • .008 A
    • .01 A
    • .012 A
    • .015 A
    • .018 A
    • .02 A
    • .024 A
    • .025 A
    • .03 A
    • .035 A
    • .036 A
    • .04 A
    • .045 A
    • .05 A
    • .06 A
    • .065 A
    • .07 A
    • .075 A
    • .08 A
    • .09 A
    • .1 A
    • .11 A
    • .12 A
    • .125 A
    • .14 A
    • .15 A
    • .18 A
    • .2 A
    • .21 A
    • .22 A
    • .25 A
    • .3 A
    • .31 A
    • .32 A
    • .33 A
    • .35 A
    • .4 A
    • .425 A
    • .44 A
    • .5 A
    • .6 A
    • .7 A
    • .73 A
    • .75 A
    • .8 A
    • 1 A
    • 1.2 A
    • 1.5 A
    • 1.6 A
    • 1.7 A
    • 1.8 A
    • 10 A
    • 100 A
    • 12 A
    • 13 A
    • 15 A
    • 150 A
    • 16 A
    • 18 A
    • 2 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.7 A
    • 20 A
    • 200 A
    • 24 A
    • 25 A
    • 28 A
    • 3 A
    • 3.3 A
    • 3.4 A
    • 3.5 A
    • 3.6 A
    • 3.8 A
    • 30 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.7 A
    • 4.9 A
    • 40 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 6.6 A
    • 7 A
    • 7.5 A
    • 75 A
    • 8 A
    • 8.5 A
    • 9 A
Package Body Material
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
Maximum Rise Time (tr)
    • 53 ns
Maximum VCEsat
    • .235 V
    • .3 V
    • .31 V
Terminal Form
    • NO LEAD
Package Shape
    • RECTANGULAR
Operating Mode
    • DEPLETION MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
Highest Frequency Band
    • L BAND
    • X BAND
Maximum Fall Time (tf)
    • 62 ns
Maximum Drain Current (Abs) (ID)
    • .02 A
    • .04 A
    • .05 A
    • .06 A
    • .07 A
    • .075 A
    • .08 A
    • .09 A
    • .1 A
    • .12 A
    • .125 A
    • .13 A
    • .14 A
    • .15 A
    • .17 A
    • .18 A
    • .2 A
    • .22 A
    • .23 A
    • .25 A
    • .26 A
    • .3 A
    • .33 A
    • .35 A
    • .4 A
    • .41 A
    • .43 A
    • .46 A
    • .48 A
    • .5 A
    • .53 A
    • .54 A
    • .55 A
    • .6 A
    • .65 A
    • .67 A
    • .68 A
    • .7 A
    • .72 A
    • .725 A
    • .75 A
    • .8 A
    • .9 A
    • .91 A
    • 1 A
    • 1.07 A
    • 1.1 A
    • 1.17 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 1.7 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 100 A
    • 11 A
    • 11.5 A
    • 110 A
    • 12 A
    • 12.5 A
    • 120 A
    • 13 A
    • 13.5 A
    • 137 A
    • 14 A
    • 14.9 A
    • 15 A
    • 15.8 A
    • 150 A
    • 16 A
    • 17 A
    • 18 A
    • 19 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.7 A
    • 2.8 A
    • 2.9 A
    • 20 A
    • 21 A
    • 22 A
    • 23 A
    • 25 A
    • 26 A
    • 27 A
    • 28 A
    • 3 A
    • 3.2 A
    • 3.3 A
    • 3.4 A
    • 3.5 A
    • 3.6 A
    • 3.7 A
    • 3.8 A
    • 3.9 A
    • 30 A
    • 31 A
    • 34 A
    • 35 A
    • 36 A
    • 38 A
    • 4 A
    • 4.1 A
    • 4.2 A
    • 4.3 A
    • 4.4 A
    • 4.5 A
    • 4.6 A
    • 4.66 A
    • 4.7 A
    • 4.8 A
    • 4.9 A
    • 40 A
    • 42 A
    • 44 A
    • 45 A
    • 46 A
    • 5 A
    • 5.2 A
    • 5.3 A
    • 5.4 A
    • 5.5 A
    • 5.6 A
    • 5.7 A
    • 5.8 A
    • 50 A
    • 55 A
    • 6 A
    • 6.1 A
    • 6.2 A
    • 6.4 A
    • 6.5 A
    • 6.6 A
    • 6.9 A
    • 60 A
    • 65 A
    • 7 A
    • 7.2 A
    • 7.4 A
    • 7.5 A
    • 7.9 A
    • 70 A
    • 75 A
    • 8 A
    • 8.2 A
    • 8.3 A
    • 8.5 A
    • 8.8 A
    • 8.9 A
    • 80 A
    • 83 A
    • 9 A
    • 9.4 A
    • 9.5 A
    • 9.7 A
    • 9.8 A
No. of Terminals
    • 3
Package Style (Meter)
    • CHIP CARRIER
Sub-Category
    • Other Transistors
Field Effect Transistor Technology
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • .1 W
    • .125 W
    • .13 W
    • .15 W
    • .165 W
    • .2 W
    • .22 W
    • .24 W
    • .25 W
    • .27 W
    • .3 W
    • .35 W
    • .4 W
    • .5 W
    • .8 W
    • 1 W
    • 1.9 W
    • 100 W
    • 110 W
    • 125 W
    • 185 W
    • 2.1 W
    • 2.5 W
    • 22 W
    • 25 W
    • 37.5 W
    • 4.2 W
    • 5 W
    • 50 W
    • 6 W
    • 7 W
    • 7.5 W
    • 90 W
Minimum DC Current Gain (hFE)
    • .07
    • .5
    • 1.5
    • 10
    • 100
    • 1000
    • 10000
    • 106
    • 11
    • 110
    • 12
    • 120
    • 1200
    • 12000
    • 125
    • 130
    • 135
    • 14
    • 140
    • 145
    • 15
    • 150
    • 1500
    • 155
    • 16
    • 160
    • 1600
    • 167
    • 17
    • 170
    • 175
    • 18
    • 180
    • 19
    • 190
    • 2
    • 2.2
    • 20
    • 200
    • 2000
    • 20000
    • 22
    • 220
    • 225
    • 230
    • 235
    • 24
    • 240
    • 25
    • 250
    • 25000
    • 260
    • 27
    • 270
    • 275
    • 28
    • 280
    • 290
    • 3
    • 3.5
    • 30
    • 300
    • 3000
    • 32
    • 320
    • 3200
    • 33
    • 34
    • 35
    • 350
    • 36
    • 360
    • 38
    • 380
    • 39
    • 390
    • 4
    • 40
    • 400
    • 4000
    • 42
    • 420
    • 45
    • 450
    • 470
    • 480
    • 49
    • 5
    • 5.3
    • 50
    • 500
    • 5000
    • 53
    • 54
    • 55
    • 56
    • 560
    • 6
    • 60
    • 600
    • 63
    • 630
    • 64
    • 65
    • 67
    • 7
    • 7.5
    • 70
    • 700
    • 7000
    • 72
    • 75
    • 750
    • 78
    • 8
    • 80
    • 800
    • 8000
    • 82
    • 85
    • 9
    • 90
    • 95
    • 96
    • 99
Maximum Operating Temperature
    • 100 Cel
    • 115 Cel
    • 125 Cel
    • 135 Cel
    • 140 Cel
    • 150 Cel
    • 155 Cel
    • 160 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 250 Cel
    • 300 Cel
    • 55 Cel
    • 60 Cel
    • 70 Cel
    • 71 Cel
    • 75 Cel
    • 80 Cel
    • 85 Cel
    • 90 Cel
    • 95 Cel
Maximum Collector-Base Capacitance
    • .15 pF
    • .45 pF
Transistor Element Material
    • GERMANIUM
    • SILICON
    • SILICON GERMANIUM
Maximum Collector-Emitter Voltage
    • 4 V
    • 4.5 V
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • Matte Tin (Sn) - with Nickel (Ni) barrier
    • NICKEL PALLADIUM GOLD
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN SILVER
    • TIN SILVER COPPER
    • TIN SILVER COPPER NICKEL
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Silver/Copper (Sn/Ag/Cu)
    • Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
Maximum Drain Current (ID)
    • .02 A
    • .04 A
    • .05 A
    • .06 A
    • .07 A
    • .075 A
    • .08 A
    • .09 A
    • .1 A
    • .12 A
    • .125 A
    • .13 A
    • .14 A
    • .15 A
    • .17 A
    • .18 A
    • .2 A
    • .22 A
    • .23 A
    • .25 A
    • .26 A
    • .3 A
    • .33 A
    • .35 A
    • .4 A
    • .41 A
    • .43 A
    • .46 A
    • .48 A
    • .5 A
    • .53 A
    • .54 A
    • .55 A
    • .6 A
    • .65 A
    • .67 A
    • .68 A
    • .7 A
    • .72 A
    • .725 A
    • .75 A
    • .8 A
    • .9 A
    • .91 A
    • 1 A
    • 1.07 A
    • 1.1 A
    • 1.17 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 1.7 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 100 A
    • 11 A
    • 11.5 A
    • 110 A
    • 12 A
    • 12.5 A
    • 120 A
    • 13 A
    • 13.5 A
    • 137 A
    • 14 A
    • 14.9 A
    • 15 A
    • 15.8 A
    • 150 A
    • 16 A
    • 17 A
    • 18 A
    • 19 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.7 A
    • 2.8 A
    • 2.9 A
    • 20 A
    • 21 A
    • 22 A
    • 23 A
    • 25 A
    • 26 A
    • 27 A
    • 28 A
    • 3 A
    • 3.2 A
    • 3.3 A
    • 3.4 A
    • 3.5 A
    • 3.6 A
    • 3.7 A
    • 3.8 A
    • 3.9 A
    • 30 A
    • 31 A
    • 34 A
    • 35 A
    • 36 A
    • 38 A
    • 4 A
    • 4.1 A
    • 4.2 A
    • 4.3 A
    • 4.4 A
    • 4.5 A
    • 4.6 A
    • 4.66 A
    • 4.7 A
    • 4.8 A
    • 4.9 A
    • 40 A
    • 42 A
    • 44 A
    • 45 A
    • 46 A
    • 5 A
    • 5.2 A
    • 5.3 A
    • 5.4 A
    • 5.5 A
    • 5.6 A
    • 5.7 A
    • 5.8 A
    • 50 A
    • 55 A
    • 6 A
    • 6.1 A
    • 6.2 A
    • 6.4 A
    • 6.5 A
    • 6.6 A
    • 6.9 A
    • 60 A
    • 65 A
    • 7 A
    • 7.2 A
    • 7.4 A
    • 7.5 A
    • 7.9 A
    • 70 A
    • 75 A
    • 8 A
    • 8.2 A
    • 8.3 A
    • 8.5 A
    • 8.8 A
    • 8.9 A
    • 80 A
    • 83 A
    • 9 A
    • 9.4 A
    • 9.5 A
    • 9.7 A
    • 9.8 A
Terminal Position
    • BOTTOM
JESD-30 Code
    • R-XBCC-N3
Moisture Sensitivity Level (MSL)
    • 1
    • 2
Case Connection
    • COLLECTOR
Qualification
    • Qualified
Additional Features
    • HIGH RELIABILITY, LOW NOISE
    • LOW NOISE
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
Peak Reflow Temperature (C)
    • 235
    • 240
    • 245
    • 255
    • 260
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

BC817K-16-E6327

Infineon Technologies

NPN

SINGLE

YES

.5 W

.5 A

1

Other Transistors

100

150 Cel

1

260

AC121VII

Infineon Technologies

PNP

SINGLE

NO

1.5 MHz

.3 W

.3 A

1

Other Transistors

190

100 Cel

Tin/Lead (Sn/Pb)

e0

BSP613P-E6327

Infineon Technologies

P-CHANNEL

SINGLE

YES

1.8 W

ENHANCEMENT MODE

1

2.9 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.9 A

BSP52-E6433

Infineon Technologies

NPN

DARLINGTON

YES

1.5 W

1 A

Other Transistors

1000

150 Cel

Tin/Lead (Sn/Pb)

e0

IRFD9025

Infineon Technologies

P-CHANNEL

SINGLE

NO

1 W

ENHANCEMENT MODE

1

1.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

1.4 A

e0

BUX28

Infineon Technologies

NPN

DARLINGTON

NO

80 W

8 A

Other Transistors

300

175 Cel

Tin/Lead (Sn/Pb)

e0

BDY13-16

Infineon Technologies

NPN

SINGLE

NO

70 MHz

26 W

5 A

1

Other Transistors

100

175 Cel

Tin/Lead (Sn/Pb)

e0

BUW72

Infineon Technologies

NPN

SINGLE

100 W

10 A

1

Other Transistors

15

140 Cel

BD828-6

Infineon Technologies

PNP

SINGLE

NO

50 MHz

8 W

1.5 A

1

Other Transistors

40

140 Cel

BDW25

Infineon Technologies

NPN

DARLINGTON

NO

30 MHz

26 W

5 A

Other Transistors

40

175 Cel

Tin/Lead (Sn/Pb)

e0

BFQ60

Infineon Technologies

NPN

SINGLE

NO

.7 W

.035 A

1

Other Transistors

175 Cel

BFP182R-E6433

Infineon Technologies

NPN

SINGLE

YES

6000 MHz

.25 W

.035 A

1

Other Transistors

50

150 Cel

BFR14B

Infineon Technologies

NPN

SINGLE

YES

.25 W

.03 A

1

Other Transistors

175 Cel

Tin/Lead (Sn/Pb)

e0

IRL3302STRLPBF

Infineon Technologies

CFY18-18

Infineon Technologies

N-CHANNEL

.1 A

Other Transistors

METAL SEMICONDUCTOR

.3 W

Tin/Lead (Sn/Pb)

.1 A

e0

BFP182R-E6327

Infineon Technologies

NPN

SINGLE

YES

6000 MHz

.25 W

.035 A

1

Other Transistors

50

150 Cel

BFQ74

Infineon Technologies

NPN

SINGLE

NO

.29 W

.03 A

1

Other Transistors

175 Cel

IRF520VPBF

Infineon Technologies

BDX30

Infineon Technologies

PNP

SINGLE

NO

50 MHz

50 W

5 A

1

Other Transistors

40

175 Cel

Tin/Lead (Sn/Pb)

e0

BF410

Infineon Technologies

N-CHANNEL

NO

.3 W

Other Transistors

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

IRF9Z25

Infineon Technologies

P-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

8.9 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

8.9 A

e0

BDY12

Infineon Technologies

NPN

SINGLE

NO

70 MHz

26 W

5 A

1

Other Transistors

40

175 Cel

Tin/Lead (Sn/Pb)

e0

IRFF9032

Infineon Technologies

P-CHANNEL

SINGLE

NO

25 W

ENHANCEMENT MODE

1

7.9 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

7.9 A

e0

BC817SU-E6433

Infineon Technologies

NPN

SINGLE

YES

1 W

.5 A

1

Other Transistors

160

150 Cel

BC818K-40-E6327

Infineon Technologies

NPN

SINGLE

YES

.5 W

.5 A

1

Other Transistors

250

150 Cel

1

260

IRFD9015

Infineon Technologies

P-CHANNEL

SINGLE

NO

1 W

ENHANCEMENT MODE

1

.91 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

.91 A

e0

BFR460L3-E6327

Infineon Technologies

NPN

SINGLE

YES

22000 MHz

.2 W

.05 A

UNSPECIFIED

AMPLIFIER

NO LEAD

RECTANGULAR

1

L BAND

3

CHIP CARRIER

Other Transistors

90

150 Cel

.45 pF

SILICON

4.5 V

GOLD

BOTTOM

R-XBCC-N3

1

COLLECTOR

LOW NOISE

e4

260

BDY12-10

Infineon Technologies

NPN

SINGLE

NO

70 MHz

26 W

3 A

1

Other Transistors

63

175 Cel

Tin/Lead (Sn/Pb)

e0

IRFM9240U

Infineon Technologies

P-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

11 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

11 A

e0

ACY31V

Infineon Technologies

BFR183-E6433

Infineon Technologies

NPN

SINGLE

YES

6000 MHz

.45 W

.065 A

1

Other Transistors

50

150 Cel

BDX29

Infineon Technologies

PNP

SINGLE

NO

50 MHz

50 W

5 A

1

Other Transistors

63

175 Cel

Tin/Lead (Sn/Pb)

e0

SXTA92

Infineon Technologies

NPN

SINGLE

YES

50 MHz

1 W

.5 A

1

Other Transistors

25

150 Cel

Tin/Lead (Sn/Pb)

e0

BFP460-E6327

Infineon Technologies

NPN

SINGLE

YES

16000 MHz

.2 W

.05 A

1

Other Transistors

90

150 Cel

1

260

PTFA180801E

Infineon Technologies

2N6701

Infineon Technologies

NPN

SINGLE

YES

.7 W

.05 A

1

Other Transistors

175 Cel

Tin/Lead (Sn/Pb)

e0

BFP193W-E6433

Infineon Technologies

NPN

SINGLE

YES

6000 MHz

.58 W

.08 A

1

Other Transistors

50

150 Cel

IRF6610TR1PBF

Infineon Technologies

BC818K-40-E6433

Infineon Technologies

NPN

SINGLE

YES

.5 W

.5 A

1

Other Transistors

250

150 Cel

CFY18-12

Infineon Technologies

N-CHANNEL

.1 A

Other Transistors

METAL SEMICONDUCTOR

.3 W

Tin/Lead (Sn/Pb)

.1 A

e0

BFP540FESD-H6327

Infineon Technologies

NPN

SINGLE

YES

21000 MHz

.25 W

.08 A

1

Other Transistors

50

150 Cel

MATTE TIN

e3

BFN26-E6327

Infineon Technologies

NPN

SINGLE

YES

.36 W

.2 A

1

Other Transistors

30

150 Cel

1

260

BFN22

Infineon Technologies

NPN

SINGLE

YES

.15 W

.02 A

1

Other Transistors

50

150 Cel

Tin/Lead (Sn/Pb)

e0

BFQ645

Infineon Technologies

NPN

SINGLE

YES

.4 W

.04 A

1

Other Transistors

50

175 Cel

Tin/Lead (Sn/Pb)

e0

2N6619

Infineon Technologies

NPN

SINGLE

YES

3600 MHz

.2 W

.03 A

1

Other Transistors

25

125 Cel

Tin/Lead (Sn/Pb)

e0

IRFC9140R

Infineon Technologies

P-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

Other Transistors

METAL-OXIDE SEMICONDUCTOR

BFG135A-E6433

Infineon Technologies

NPN

SINGLE

YES

4500 MHz

1 W

.15 A

1

Other Transistors

80

150 Cel

2N6846

Infineon Technologies

P-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2 A

e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.