Toshiba Other Function Transistors 2,056

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

2SC3803-O(TE12L,F)

Toshiba

NPN

SINGLE

YES

100 MHz

1 W

.2 A

1

Other Transistors

70

150 Cel

2SC3665-Y(TPF2,Q)

Toshiba

NPN

SINGLE

NO

1 W

.8 A

1

Other Transistors

120

150 Cel

HN4A06J(TE85L)

Toshiba

2SC5108FT(TE85L)

Toshiba

NPN

SINGLE

YES

4000 MHz

.1 W

.03 A

1

Other Transistors

80

125 Cel

RN47A5JE(TE85L)

Toshiba

SSM3J01T(TE85L,F)

Toshiba

2SC2873-O(TE12L,F)

Toshiba

NPN

SINGLE

YES

.5 W

2 A

1

Other Transistors

70

150 Cel

2SC5548(TE16L1,Q)

Toshiba

NPN

SINGLE

YES

15 W

2 A

1

Other Transistors

50

150 Cel

HN1C03FU-A(TE85L,F)

Toshiba

NPN

SINGLE

YES

.2 W

.3 A

1

Other Transistors

200

150 Cel

2SB905R(SM)

Toshiba

NPN

SINGLE

YES

15 MHz

10 W

1.5 A

1

Other Transistors

60

150 Cel

2SC3181

Toshiba

NPN

SINGLE

NO

30 MHz

80 W

8 A

1

Other Transistors

55

140 Cel

Tin/Lead (Sn/Pb)

e0

2SC6052(TE16L1)

Toshiba

NPN

SINGLE

YES

10 W

5 A

1

Other Transistors

180

150 Cel

2SC5085O(TE85L,F)

Toshiba

NPN

SINGLE

YES

5000 MHz

.1 W

.08 A

1

Other Transistors

80

125 Cel

2SC5376-A(TE85L)

Toshiba

2SC3803-Y(TE12L)

Toshiba

NPN

SINGLE

YES

100 MHz

1 W

.2 A

1

Other Transistors

120

150 Cel

2SC2655-O(TPE6,F)

Toshiba

NPN

SINGLE

NO

.9 W

2 A

1

Other Transistors

70

150 Cel

2SK3667(Q)

Toshiba

2SC3548

Toshiba

NPN

SINGLE

YES

4000 MHz

.2 W

.03 A

1

Other Transistors

30

125 Cel

Tin/Lead (Sn/Pb)

e0

2SC6133(TE85L)

Toshiba

NPN

SINGLE

YES

.8 W

1.5 A

1

Other Transistors

400

150 Cel

2SD777

Toshiba

NPN

SINGLE

NO

100 W

4 A

1

Other Transistors

500

140 Cel

Tin/Lead (Sn/Pb)

e0

2SC3208

Toshiba

NPN

SINGLE

NO

40 MHz

12 W

.15 A

1

Other Transistors

40

Tin/Lead (Sn/Pb)

e0

2SC785

Toshiba

NPN

SINGLE

NO

500 MHz

.1 W

.02 A

1

Other Transistors

25

125 Cel

Tin/Lead (Sn/Pb)

e0

2SD684

Toshiba

NPN

DARLINGTON

NO

30 W

6 A

Other Transistors

1500

150 Cel

Tin/Lead (Sn/Pb)

e0

TPC6502(TE85L,F)

Toshiba

NPN

SINGLE

YES

1.6 W

3 A

1

Other Transistors

400

150 Cel

MT3S03AS(TE85L)

Toshiba

NPN

SINGLE

5000 MHz

.1 W

.04 A

1

Other Transistors

80

125 Cel

TBF872

Toshiba

PNP

SINGLE

NO

80 MHz

1.6 W

.05 A

1

Other Transistors

50

140 Cel

Tin/Lead (Sn/Pb)

e0

SSM5P05FU(TE85L)

Toshiba

SSM5P16FU(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

SSM6L36TU(TE85L)

Toshiba

N-CHANNEL AND P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

SSM3J15CT(TPL3)

Toshiba

P-CHANNEL

SINGLE

YES

.1 W

ENHANCEMENT MODE

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

RN2709JE(TE85L)

Toshiba

SSM6L11TU(TE85L)

Toshiba

N-CHANNEL AND P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

2SC3671-A(TPF2,F)

Toshiba

NPN

SINGLE

NO

1 W

5 A

1

Other Transistors

140

150 Cel

SSM6J206FE(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

2SD1362

Toshiba

NPN

SINGLE

NO

40 W

7 A

1

Other Transistors

70

140 Cel

Tin/Lead (Sn/Pb)

e0

S2531

Toshiba

NPN

SINGLE

NO

.25 W

.05 A

1

Other Transistors

175 Cel

Tin/Lead (Sn/Pb)

e0

TTC0001(F)

Toshiba

NPN

SINGLE

NO

150 W

18 A

1

Other Transistors

80

150 Cel

2SC2531

Toshiba

NPN

SINGLE

YES

.175 W

.03 A

1

Other Transistors

125 Cel

Tin/Lead (Sn/Pb)

e0

SSM3J01F(TE85L,F)

Toshiba

TJ15S06M3L(TE16L1)

Toshiba

P-CHANNEL

SINGLE

YES

41 W

ENHANCEMENT MODE

1

15 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

15 A

2SD1407A-Y(Q)

Toshiba

NPN

SINGLE

NO

30 W

5 A

1

Other Transistors

120

150 Cel

2SB434

Toshiba

PNP

SINGLE

NO

3 MHz

25 W

3 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

SSM6P39TU(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

1.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

2SC2088

Toshiba

NPN

SINGLE

NO

150 MHz

.3 W

.05 A

1

Other Transistors

350

125 Cel

Tin/Lead (Sn/Pb)

e0

HN7G07FUA

Toshiba

2SC3562

Toshiba

2SK266

Toshiba

N-CHANNEL

NO

.1 W

Other Transistors

JUNCTION

2SC3669-Y(TPF2,Q)

Toshiba

NPN

SINGLE

NO

1 W

2 A

1

Other Transistors

120

150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.