Toshiba Other Function Transistors 2,056

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Manufacturers (1)
    • Toshiba
    • Acrian
    • Allegro MicroSystems
    • Alpha & Omega Semiconductor
    • Analog Devices
    • Bourns
    • Broadcom
    • Calogic
    • Central Semiconductor
    • Continental Device India
    • Digitron Semiconductors
    • Diodes Incorporated
    • Diotec Semiconductor Ag
    • Fairchild Semiconductor
    • Forward International Electronics
    • Fujitsu
    • General Electric Solid State
    • Gpd Optoelectronics
    • Harris Semiconductor
    • Inchange Semiconductor
    • Infineon Technologies
    • International Rectifier
    • Jiangsu Changjiang Electronics Technology
    • Kodenshi Auk
    • Linear Integrated Systems
    • Micro Commercial Components
    • Microchip Technology
    • Microsemi
    • Micross Components
    • Mospec Semiconductor
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • Nte Electronics
    • Onsemi
    • Panjit International
    • Philips Semiconductors
    • Plessey Semiconductors Discrete Components Div
    • ROHM
    • Rectron
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Sanken Electric
    • Secos
    • Semiconductors
    • Semitronics
    • Shantou Huashan Electronic Devices
    • Solitron Devices
    • Sumitomo Electric Device Innovations Usa
    • TE Connectivity
    • Taiwan Semiconductor
    • Texas Instruments
    • Thomson Consumer Electronics
    • Tt Electronics Plc
    • Unisonic Technologies
    • Vishay Intertechnology
    • Weitron Technology
    • Yangzhou Yangjie Electronics
    • Zetex Plc
Polarity or Channel Type
    • N-CHANNEL
    • N-CHANNEL AND P-CHANNEL
    • NPN
    • NPN AND PNP
    • P-CHANNEL
    • PNP
Configuration
    • 2 BANKS, DARLINGTON
    • DARLINGTON
    • SINGLE
Surface Mount
    • NO
    • YES
Nominal Transition Frequency (fT)
    • .004 MHz
    • .006 MHz
    • .0066 MHz
    • .02 MHz
    • .03 MHz
    • .05 MHz
    • .075 MHz
    • .08 MHz
    • .09 MHz
    • .2 MHz
    • .22 MHz
    • .25 MHz
    • .3 MHz
    • .35 MHz
    • .4 MHz
    • .5 MHz
    • .7 MHz
    • .75 MHz
    • .8 MHz
    • 1 MHz
    • 1.2 MHz
    • 1.3 MHz
    • 1.5 MHz
    • 1.6 MHz
    • 1.7 MHz
    • 10 MHz
    • 100 MHz
    • 1000 MHz
    • 10000 MHz
    • 102 MHz
    • 10500 MHz
    • 110 MHz
    • 1100 MHz
    • 11000 MHz
    • 11500 MHz
    • 12 MHz
    • 120 MHz
    • 1200 MHz
    • 12000 MHz
    • 125 MHz
    • 12500 MHz
    • 130 MHz
    • 1300 MHz
    • 13000 MHz
    • 135 MHz
    • 14 MHz
    • 140 MHz
    • 1400 MHz
    • 14000 MHz
    • 145 MHz
    • 15 MHz
    • 150 MHz
    • 1500 MHz
    • 15000 MHz
    • 16 MHz
    • 160 MHz
    • 1600 MHz
    • 16000 MHz
    • 17 MHz
    • 170 MHz
    • 1700 MHz
    • 17000 MHz
    • 175 MHz
    • 18 MHz
    • 180 MHz
    • 1800 MHz
    • 18000 MHz
    • 190 MHz
    • 2 MHz
    • 2.4 MHz
    • 2.5 MHz
    • 20 MHz
    • 200 MHz
    • 2000 MHz
    • 20000 MHz
    • 210 MHz
    • 21000 MHz
    • 220 MHz
    • 2200 MHz
    • 22000 MHz
    • 230 MHz
    • 24 MHz
    • 2400 MHz
    • 245 MHz
    • 25 MHz
    • 250 MHz
    • 2500 MHz
    • 260 MHz
    • 275 MHz
    • 280 MHz
    • 2800 MHz
    • 285 MHz
    • 3 MHz
    • 3.5 MHz
    • 30 MHz
    • 300 MHz
    • 3000 MHz
    • 30000 MHz
    • 320 MHz
    • 32000 MHz
    • 34 MHz
    • 3400 MHz
    • 350 MHz
    • 3500 MHz
    • 360 MHz
    • 3600 MHz
    • 36000 MHz
    • 380 MHz
    • 4 MHz
    • 4.3 MHz
    • 4.7 MHz
    • 40 MHz
    • 400 MHz
    • 4000 MHz
    • 42 MHz
    • 4200 MHz
    • 42000 MHz
    • 45 MHz
    • 450 MHz
    • 4500 MHz
    • 470 MHz
    • 4700 MHz
    • 5 MHz
    • 5.6 MHz
    • 50 MHz
    • 500 MHz
    • 5000 MHz
    • 5100 MHz
    • 55 MHz
    • 550 MHz
    • 5500 MHz
    • 580 MHz
    • 5800 MHz
    • 6 MHz
    • 6.5 MHz
    • 60 MHz
    • 600 MHz
    • 6000 MHz
    • 65 MHz
    • 650 MHz
    • 6500 MHz
    • 66 MHz
    • 675 MHz
    • 69 MHz
    • 7 MHz
    • 7.2 MHz
    • 7.5 MHz
    • 70 MHz
    • 700 MHz
    • 7000 MHz
    • 75 MHz
    • 750 MHz
    • 7500 MHz
    • 770 MHz
    • 78 MHz
    • 8 MHz
    • 80 MHz
    • 800 MHz
    • 8000 MHz
    • 820 MHz
    • 836 MHz
    • 85 MHz
    • 8500 MHz
    • 86 MHz
    • 9 MHz
    • 90 MHz
    • 900 MHz
    • 9000 MHz
    • 940 MHz
    • 95 MHz
    • 950 MHz
    • 9500 MHz
Maximum Power Dissipation (Abs)
    • .004 W
    • .02 W
    • .025 W
    • .03 W
    • .035 W
    • .036 W
    • .039 W
    • .04 W
    • .05 W
    • .054 W
    • .055 W
    • .06 W
    • .065 W
    • .0675 W
    • .075 W
    • .08 W
    • .09 W
    • .1 W
    • .105 W
    • .11 W
    • .115 W
    • .12 W
    • .125 W
    • .13 W
    • .135 W
    • .14 W
    • .15 W
    • .16 W
    • .162 W
    • .165 W
    • .17 W
    • .171 W
    • .175 W
    • .18 W
    • .185 W
    • .19 W
    • .2 W
    • .205 W
    • .21 W
    • .22 W
    • .225 W
    • .23 W
    • .24 W
    • .25 W
    • .26 W
    • .27 W
    • .28 W
    • .29 W
    • .3 W
    • .31 W
    • .32 W
    • .325 W
    • .33 W
    • .337 W
    • .345 W
    • .35 W
    • .36 W
    • .375 W
    • .38 W
    • .386 W
    • .39 W
    • .4 W
    • .41 W
    • .415 W
    • .42 W
    • .425 W
    • .43 W
    • .445 W
    • .45 W
    • .48 W
    • .5 W
    • .515 W
    • .55 W
    • .56 W
    • .57 W
    • .58 W
    • .59 W
    • .6 W
    • .62 W
    • .625 W
    • .63 W
    • .65 W
    • .66 W
    • .68 W
    • .69 W
    • .7 W
    • .715 W
    • .725 W
    • .73 W
    • .735 W
    • .75 W
    • .76 W
    • .8 W
    • .83 W
    • .85 W
    • .87 W
    • .88 W
    • .9 W
    • .96 W
    • 1 W
    • 1.09 W
    • 1.1 W
    • 1.15 W
    • 1.17 W
    • 1.2 W
    • 1.25 W
    • 1.28 W
    • 1.3 W
    • 1.35 W
    • 1.38 W
    • 1.4 W
    • 1.42 W
    • 1.45 W
    • 1.48 W
    • 1.5 W
    • 1.51 W
    • 1.56 W
    • 1.6 W
    • 1.65 W
    • 1.68 W
    • 1.7 W
    • 1.75 W
    • 1.77 W
    • 1.8 W
    • 1.9 W
    • 10 W
    • 100 W
    • 1000 W
    • 11 W
    • 11.7 W
    • 110 W
    • 1100 W
    • 113 W
    • 114 W
    • 115 W
    • 117 W
    • 12 W
    • 12.5 W
    • 120 W
    • 1200 W
    • 125 W
    • 13 W
    • 130 W
    • 132 W
    • 136 W
    • 140 W
    • 145 W
    • 15 W
    • 150 W
    • 16 W
    • 160 W
    • 17 W
    • 170 W
    • 175 W
    • 176 W
    • 18 W
    • 180 W
    • 187 W
    • 19 W
    • 2 W
    • 2.01 W
    • 2.1 W
    • 2.2 W
    • 2.25 W
    • 2.3 W
    • 2.4 W
    • 2.5 W
    • 2.6 W
    • 2.8 W
    • 2.9 W
    • 20 W
    • 200 W
    • 21 W
    • 22 W
    • 220 W
    • 23 W
    • 233 W
    • 24 W
    • 25 W
    • 250 W
    • 26 W
    • 27 W
    • 28 W
    • 29 W
    • 290 W
    • 292 W
    • 3 W
    • 3.1 W
    • 3.3 W
    • 3.5 W
    • 3.57 W
    • 3.6 W
    • 3.7 W
    • 3.8 W
    • 3.9 W
    • 30 W
    • 300 W
    • 31 W
    • 32 W
    • 320 W
    • 33 W
    • 35 W
    • 36 W
    • 37 W
    • 375 W
    • 38 W
    • 39 W
    • 390 W
    • 4 W
    • 4.025 W
    • 4.03 W
    • 4.15 W
    • 4.4 W
    • 4.6 W
    • 4.8 W
    • 40 W
    • 400 W
    • 41 W
    • 41.5 W
    • 42 W
    • 44 W
    • 45 W
    • 450 W
    • 46 W
    • 46.8 W
    • 49 W
    • 5 W
    • 5.3 W
    • 5.4 W
    • 5.5 W
    • 5.68 W
    • 5.8 W
    • 50 W
    • 52 W
    • 54 W
    • 55 W
    • 56 W
    • 57 W
    • 57.2 W
    • 583 W
    • 6 W
    • 6.25 W
    • 6.9 W
    • 60 W
    • 62 W
    • 62.5 W
    • 620 W
    • 625 W
    • 63 W
    • 65 W
    • 66 W
    • 67 W
    • 68 W
    • 7 W
    • 7.4 W
    • 7.5 W
    • 70 W
    • 71 W
    • 75 W
    • 770 W
    • 78 W
    • 8 W
    • 8.3 W
    • 8.33 W
    • 8.5 W
    • 8.7 W
    • 8.8 W
    • 80 W
    • 83 W
    • 85 W
    • 87 W
    • 88 W
    • 9 W
    • 9.7 W
    • 90 W
    • 91 W
    • 95 W
Maximum Collector Current (IC)
    • .000001 A
    • .000003 A
    • .00125 A
    • .002 A
    • .0025 A
    • .003 A
    • .005 A
    • .0065 A
    • .007 A
    • .008 A
    • .01 A
    • .012 A
    • .015 A
    • .018 A
    • .02 A
    • .024 A
    • .025 A
    • .03 A
    • .035 A
    • .036 A
    • .04 A
    • .045 A
    • .05 A
    • .06 A
    • .065 A
    • .07 A
    • .075 A
    • .08 A
    • .09 A
    • .1 A
    • .11 A
    • .12 A
    • .125 A
    • .14 A
    • .15 A
    • .18 A
    • .2 A
    • .21 A
    • .22 A
    • .25 A
    • .3 A
    • .31 A
    • .32 A
    • .33 A
    • .35 A
    • .4 A
    • .425 A
    • .44 A
    • .5 A
    • .6 A
    • .7 A
    • .73 A
    • .75 A
    • .8 A
    • 1 A
    • 1.2 A
    • 1.5 A
    • 1.6 A
    • 1.7 A
    • 1.8 A
    • 10 A
    • 100 A
    • 12 A
    • 13 A
    • 15 A
    • 150 A
    • 16 A
    • 18 A
    • 2 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.7 A
    • 20 A
    • 200 A
    • 24 A
    • 25 A
    • 28 A
    • 3 A
    • 3.3 A
    • 3.4 A
    • 3.5 A
    • 3.6 A
    • 3.8 A
    • 30 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.7 A
    • 4.9 A
    • 40 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 6.6 A
    • 7 A
    • 7.5 A
    • 75 A
    • 8 A
    • 8.5 A
    • 9 A
Package Body Material
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
Maximum Rise Time (tr)
    • 53 ns
Maximum VCEsat
    • .235 V
    • .3 V
    • .31 V
Terminal Form
    • NO LEAD
Package Shape
    • RECTANGULAR
Operating Mode
    • DEPLETION MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
Highest Frequency Band
    • L BAND
    • X BAND
Maximum Fall Time (tf)
    • 62 ns
Maximum Drain Current (Abs) (ID)
    • .02 A
    • .04 A
    • .05 A
    • .06 A
    • .07 A
    • .075 A
    • .08 A
    • .09 A
    • .1 A
    • .12 A
    • .125 A
    • .13 A
    • .14 A
    • .15 A
    • .17 A
    • .18 A
    • .2 A
    • .22 A
    • .23 A
    • .25 A
    • .26 A
    • .3 A
    • .33 A
    • .35 A
    • .4 A
    • .41 A
    • .43 A
    • .46 A
    • .48 A
    • .5 A
    • .53 A
    • .54 A
    • .55 A
    • .6 A
    • .65 A
    • .67 A
    • .68 A
    • .7 A
    • .72 A
    • .725 A
    • .75 A
    • .8 A
    • .9 A
    • .91 A
    • 1 A
    • 1.07 A
    • 1.1 A
    • 1.17 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 1.7 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 100 A
    • 11 A
    • 11.5 A
    • 110 A
    • 12 A
    • 12.5 A
    • 120 A
    • 13 A
    • 13.5 A
    • 137 A
    • 14 A
    • 14.9 A
    • 15 A
    • 15.8 A
    • 150 A
    • 16 A
    • 17 A
    • 18 A
    • 19 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.7 A
    • 2.8 A
    • 2.9 A
    • 20 A
    • 21 A
    • 22 A
    • 23 A
    • 25 A
    • 26 A
    • 27 A
    • 28 A
    • 3 A
    • 3.2 A
    • 3.3 A
    • 3.4 A
    • 3.5 A
    • 3.6 A
    • 3.7 A
    • 3.8 A
    • 3.9 A
    • 30 A
    • 31 A
    • 34 A
    • 35 A
    • 36 A
    • 38 A
    • 4 A
    • 4.1 A
    • 4.2 A
    • 4.3 A
    • 4.4 A
    • 4.5 A
    • 4.6 A
    • 4.66 A
    • 4.7 A
    • 4.8 A
    • 4.9 A
    • 40 A
    • 42 A
    • 44 A
    • 45 A
    • 46 A
    • 5 A
    • 5.2 A
    • 5.3 A
    • 5.4 A
    • 5.5 A
    • 5.6 A
    • 5.7 A
    • 5.8 A
    • 50 A
    • 55 A
    • 6 A
    • 6.1 A
    • 6.2 A
    • 6.4 A
    • 6.5 A
    • 6.6 A
    • 6.9 A
    • 60 A
    • 65 A
    • 7 A
    • 7.2 A
    • 7.4 A
    • 7.5 A
    • 7.9 A
    • 70 A
    • 75 A
    • 8 A
    • 8.2 A
    • 8.3 A
    • 8.5 A
    • 8.8 A
    • 8.9 A
    • 80 A
    • 83 A
    • 9 A
    • 9.4 A
    • 9.5 A
    • 9.7 A
    • 9.8 A
No. of Terminals
    • 3
Package Style (Meter)
    • CHIP CARRIER
Sub-Category
    • Other Transistors
Field Effect Transistor Technology
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • .1 W
    • .125 W
    • .13 W
    • .15 W
    • .165 W
    • .2 W
    • .22 W
    • .24 W
    • .25 W
    • .27 W
    • .3 W
    • .35 W
    • .4 W
    • .5 W
    • .8 W
    • 1 W
    • 1.9 W
    • 100 W
    • 110 W
    • 125 W
    • 185 W
    • 2.1 W
    • 2.5 W
    • 22 W
    • 25 W
    • 37.5 W
    • 4.2 W
    • 5 W
    • 50 W
    • 6 W
    • 7 W
    • 7.5 W
    • 90 W
Minimum DC Current Gain (hFE)
    • .07
    • .5
    • 1.5
    • 10
    • 100
    • 1000
    • 10000
    • 106
    • 11
    • 110
    • 12
    • 120
    • 1200
    • 12000
    • 125
    • 130
    • 135
    • 14
    • 140
    • 145
    • 15
    • 150
    • 1500
    • 155
    • 16
    • 160
    • 1600
    • 167
    • 17
    • 170
    • 175
    • 18
    • 180
    • 19
    • 190
    • 2
    • 2.2
    • 20
    • 200
    • 2000
    • 20000
    • 22
    • 220
    • 225
    • 230
    • 235
    • 24
    • 240
    • 25
    • 250
    • 25000
    • 260
    • 27
    • 270
    • 275
    • 28
    • 280
    • 290
    • 3
    • 3.5
    • 30
    • 300
    • 3000
    • 32
    • 320
    • 3200
    • 33
    • 34
    • 35
    • 350
    • 36
    • 360
    • 38
    • 380
    • 39
    • 390
    • 4
    • 40
    • 400
    • 4000
    • 42
    • 420
    • 45
    • 450
    • 470
    • 480
    • 49
    • 5
    • 5.3
    • 50
    • 500
    • 5000
    • 53
    • 54
    • 55
    • 56
    • 560
    • 6
    • 60
    • 600
    • 63
    • 630
    • 64
    • 65
    • 67
    • 7
    • 7.5
    • 70
    • 700
    • 7000
    • 72
    • 75
    • 750
    • 78
    • 8
    • 80
    • 800
    • 8000
    • 82
    • 85
    • 9
    • 90
    • 95
    • 96
    • 99
Maximum Operating Temperature
    • 100 Cel
    • 115 Cel
    • 125 Cel
    • 135 Cel
    • 140 Cel
    • 150 Cel
    • 155 Cel
    • 160 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 250 Cel
    • 300 Cel
    • 55 Cel
    • 60 Cel
    • 70 Cel
    • 71 Cel
    • 75 Cel
    • 80 Cel
    • 85 Cel
    • 90 Cel
    • 95 Cel
Maximum Collector-Base Capacitance
    • .15 pF
    • .45 pF
Transistor Element Material
    • GERMANIUM
    • SILICON
    • SILICON GERMANIUM
Maximum Collector-Emitter Voltage
    • 4 V
    • 4.5 V
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • Matte Tin (Sn) - with Nickel (Ni) barrier
    • NICKEL PALLADIUM GOLD
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN SILVER
    • TIN SILVER COPPER
    • TIN SILVER COPPER NICKEL
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Silver/Copper (Sn/Ag/Cu)
    • Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
Maximum Drain Current (ID)
    • .02 A
    • .04 A
    • .05 A
    • .06 A
    • .07 A
    • .075 A
    • .08 A
    • .09 A
    • .1 A
    • .12 A
    • .125 A
    • .13 A
    • .14 A
    • .15 A
    • .17 A
    • .18 A
    • .2 A
    • .22 A
    • .23 A
    • .25 A
    • .26 A
    • .3 A
    • .33 A
    • .35 A
    • .4 A
    • .41 A
    • .43 A
    • .46 A
    • .48 A
    • .5 A
    • .53 A
    • .54 A
    • .55 A
    • .6 A
    • .65 A
    • .67 A
    • .68 A
    • .7 A
    • .72 A
    • .725 A
    • .75 A
    • .8 A
    • .9 A
    • .91 A
    • 1 A
    • 1.07 A
    • 1.1 A
    • 1.17 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 1.7 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 100 A
    • 11 A
    • 11.5 A
    • 110 A
    • 12 A
    • 12.5 A
    • 120 A
    • 13 A
    • 13.5 A
    • 137 A
    • 14 A
    • 14.9 A
    • 15 A
    • 15.8 A
    • 150 A
    • 16 A
    • 17 A
    • 18 A
    • 19 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.7 A
    • 2.8 A
    • 2.9 A
    • 20 A
    • 21 A
    • 22 A
    • 23 A
    • 25 A
    • 26 A
    • 27 A
    • 28 A
    • 3 A
    • 3.2 A
    • 3.3 A
    • 3.4 A
    • 3.5 A
    • 3.6 A
    • 3.7 A
    • 3.8 A
    • 3.9 A
    • 30 A
    • 31 A
    • 34 A
    • 35 A
    • 36 A
    • 38 A
    • 4 A
    • 4.1 A
    • 4.2 A
    • 4.3 A
    • 4.4 A
    • 4.5 A
    • 4.6 A
    • 4.66 A
    • 4.7 A
    • 4.8 A
    • 4.9 A
    • 40 A
    • 42 A
    • 44 A
    • 45 A
    • 46 A
    • 5 A
    • 5.2 A
    • 5.3 A
    • 5.4 A
    • 5.5 A
    • 5.6 A
    • 5.7 A
    • 5.8 A
    • 50 A
    • 55 A
    • 6 A
    • 6.1 A
    • 6.2 A
    • 6.4 A
    • 6.5 A
    • 6.6 A
    • 6.9 A
    • 60 A
    • 65 A
    • 7 A
    • 7.2 A
    • 7.4 A
    • 7.5 A
    • 7.9 A
    • 70 A
    • 75 A
    • 8 A
    • 8.2 A
    • 8.3 A
    • 8.5 A
    • 8.8 A
    • 8.9 A
    • 80 A
    • 83 A
    • 9 A
    • 9.4 A
    • 9.5 A
    • 9.7 A
    • 9.8 A
Terminal Position
    • BOTTOM
JESD-30 Code
    • R-XBCC-N3
Moisture Sensitivity Level (MSL)
    • 1
    • 2
Case Connection
    • COLLECTOR
Qualification
    • Qualified
Additional Features
    • HIGH RELIABILITY, LOW NOISE
    • LOW NOISE
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
Peak Reflow Temperature (C)
    • 235
    • 240
    • 245
    • 255
    • 260
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

2SC4251(TE85L)

Toshiba

NPN

SINGLE

YES

650 MHz

.1 W

.05 A

1

Other Transistors

40

125 Cel

2SC4738-GR(TE85L)

Toshiba

JS8905AS

Toshiba

2SC5354(Q)

Toshiba

NPN

SINGLE

NO

100 W

5 A

1

Other Transistors

15

150 Cel

2SC6026MFV-GR(TPL3,F)

Toshiba

NPN

SINGLE

YES

60 MHz

.15 W

.15 A

1

Other Transistors

200

150 Cel

2SC2238A

Toshiba

SSM6P15FE(TPL3)

Toshiba

P-CHANNEL

YES

.15 W

ENHANCEMENT MODE

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

2SD1220R(SM)

Toshiba

NPN

SINGLE

YES

20 MHz

10 W

1.5 A

1

Other Transistors

60

150 Cel

MT3S113TU(TE85L)

Toshiba

NPN

SINGLE

YES

9000 MHz

.9 W

.1 A

1

Other Transistors

200

150 Cel

SSM6J50TU(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

2.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.5 A

MT4S23U(TE85L,F)

Toshiba

NPN

SINGLE

YES

13000 MHz

.17 W

.04 A

1

Other Transistors

50

150 Cel

2SC2235-O(TPE6)

Toshiba

NPN

NO

.9 W

.8 A

Other Transistors

80

150 Cel

2SK2777(TE24L,Q)

Toshiba

2SC6125(TE12L)

Toshiba

NPN

SINGLE

YES

2.5 W

4 A

1

Other Transistors

180

150 Cel

2SA2195(TE85L,F)

Toshiba

PNP

SINGLE

YES

.8 W

1.7 A

1

Other Transistors

200

150 Cel

SSM6L35FU(TE85L,F)

Toshiba

N-CHANNEL AND P-CHANNEL

YES

.2 W

ENHANCEMENT MODE

.18 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.18 A

2SD2012(F)

Toshiba

NPN

SINGLE

NO

25 W

3 A

1

Other Transistors

100

150 Cel

2SK3437(TE24L)

Toshiba

RN4911FE(TE85L)

Toshiba

2SC109A

Toshiba

NPN

SINGLE

NO

150 MHz

.8 W

.8 A

1

Other Transistors

40

175 Cel

Tin/Lead (Sn/Pb)

e0

SSM6J07FU(TE85L,F)

Toshiba

2SC108A

Toshiba

NPN

SINGLE

NO

150 MHz

.8 W

.8 A

1

Other Transistors

40

175 Cel

Tin/Lead (Sn/Pb)

e0

2SC5232-B(TE85L,F)

Toshiba

NPN

SINGLE

YES

80 MHz

.15 W

.5 A

1

Other Transistors

300

125 Cel

2SA815

Toshiba

PNP

SINGLE

NO

30 MHz

15 W

1 A

1

Other Transistors

70

140 Cel

Tin/Lead (Sn/Pb)

e0

2SC5096R(TE85L,F)

Toshiba

NPN

SINGLE

YES

7000 MHz

.1 W

.015 A

1

Other Transistors

50

125 Cel

2SB996

Toshiba

PNP

SINGLE

NO

9 MHz

30 W

3 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

TPC6111(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

2.2 W

ENHANCEMENT MODE

1

5.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.5 A

HN9C21FT(TE85L)

Toshiba

NPN

YES

5000 MHz

.06 A

Other Transistors

80

125 Cel

2SC3138-Y(TE85L)

Toshiba

SSM3K12T(TE85L,F)

Toshiba

S2510

Toshiba

2SC5109-Y(TE85L)

Toshiba

2SD684A

Toshiba

NPN

DARLINGTON

NO

30 W

6 A

Other Transistors

600

150 Cel

Tin/Lead (Sn/Pb)

e0

2SK2993S1B

Toshiba

2SA490

Toshiba

PNP

SINGLE

NO

4 MHz

25 W

3 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

TPCF8306(TE85L)

Toshiba

P-CHANNEL

YES

1.35 W

ENHANCEMENT MODE

3.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.2 A

2SC5785(TE12L,F)

Toshiba

NPN

SINGLE

YES

2 W

2 A

1

Other Transistors

400

150 Cel

2SJ347(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

.1 W

ENHANCEMENT MODE

1

.05 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.05 A

HN1A01FE-GR(TPL3)

Toshiba

PNP

YES

80 MHz

.1 W

.15 A

Other Transistors

200

150 Cel

SSM3J15FS(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.1 W

ENHANCEMENT MODE

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

2SC5087Y(TE85L,F)

Toshiba

NPN

SINGLE

YES

5000 MHz

.15 W

.08 A

1

Other Transistors

120

125 Cel

2SC5439(Q)

Toshiba

NPN

SINGLE

NO

30 W

8 A

1

Other Transistors

14

150 Cel

RN47A4JE(TE85L)

Toshiba

2SC3295-A(TE85L)

Toshiba

SSM6J53FE(TPL3,F)

Toshiba

2SK3417(TE24L,Q)

Toshiba

RN4984FE(TE85L)

Toshiba

TTA005(TE16L1)

Toshiba

PNP

SINGLE

YES

24 W

5 A

1

Other Transistors

200

175 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.