Toshiba Other Function Transistors 2,056

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

2SA1378

Toshiba

PNP

SINGLE

NO

7 MHz

.3 W

.5 A

1

Other Transistors

70

175 Cel

Tin/Lead (Sn/Pb)

e0

2SA1587-BL(TE85L)

Toshiba

MPS2906A

Toshiba

PNP

SINGLE

NO

200 MHz

.625 W

.6 A

1

Other Transistors

40

Tin/Lead (Sn/Pb)

e0

2SA1015LBL

Toshiba

PNP

SINGLE

NO

80 MHz

.4 W

.15 A

1

Other Transistors

350

125 Cel

Tin/Lead (Sn/Pb)

e0

2SA1213O(TE12L)

Toshiba

PNP

SINGLE

YES

1 W

2 A

1

Other Transistors

70

150 Cel

2SA1926(TPF2)

Toshiba

PNP

SINGLE

NO

1 W

3 A

1

Other Transistors

150

150 Cel

2SA1015-O(F,T)

Toshiba

PNP

SINGLE

NO

80 MHz

.4 W

.15 A

1

Other Transistors

70

125 Cel

2SA1015-GR(F)

Toshiba

PNP

SINGLE

NO

80 MHz

.4 W

.15 A

1

Other Transistors

200

125 Cel

2SA1255-Y(TE85L,F)

Toshiba

PNP

SINGLE

YES

50 MHz

.15 W

50 A

1

Other Transistors

120

125 Cel

2SA1873-Y(TE85L,F)

Toshiba

PNP

YES

80 MHz

.2 W

.15 A

Other Transistors

120

125 Cel

2SA1015-GR(F,T)

Toshiba

PNP

SINGLE

NO

80 MHz

.4 W

.15 A

1

Other Transistors

200

125 Cel

2SA1225Y(SM)

Toshiba

PNP

SINGLE

NO

15 W

1.5 A

1

Other Transistors

120

150 Cel

Tin/Lead (Sn/Pb)

e0

2SA1242O(SM)

Toshiba

PNP

SINGLE

YES

10 W

5 A

1

Other Transistors

100

150 Cel

2SA1263

Toshiba

PNP

SINGLE

NO

30 MHz

60 W

6 A

1

Other Transistors

55

140 Cel

Tin/Lead (Sn/Pb)

e0

MPS2906

Toshiba

PNP

SINGLE

NO

200 MHz

.625 W

.6 A

1

Other Transistors

40

Tin/Lead (Sn/Pb)

e0

2SA1955-B(TE85L)

Toshiba

2SA1015BL

Toshiba

PNP

SINGLE

NO

80 MHz

.4 W

.15 A

1

Other Transistors

350

Tin/Lead (Sn/Pb)

e0

2SA1483Y(TE12L,F)

Toshiba

PNP

SINGLE

YES

100 MHz

1 W

.2 A

1

Other Transistors

120

150 Cel

2SA1832-GR(T5L,F,T)

Toshiba

PNP

SINGLE

YES

80 MHz

.1 W

.15 A

1

Other Transistors

200

125 Cel

2SA1887(F)

Toshiba

2SA1244-O(TE16L1,Q)

Toshiba

PNP

SINGLE

YES

20 W

5 A

1

Other Transistors

70

150 Cel

2SA1425-O(TPF2)

Toshiba

PNP

SINGLE

NO

1 W

.8 A

1

Other Transistors

80

150 Cel

2SA1955FV-A(TPL3)

Toshiba

PNP

SINGLE

YES

80 MHz

.15 W

.4 A

1

Other Transistors

300

150 Cel

2SA1158

Toshiba

PNP

SINGLE

NO

100 MHz

.4 W

.1 A

1

Other Transistors

120

125 Cel

Tin/Lead (Sn/Pb)

e0

2SA1425-Y(TPF2)

Toshiba

PNP

SINGLE

NO

1 W

.8 A

1

Other Transistors

120

150 Cel

2SA1322

Toshiba

PNP

SINGLE

NO

80 MHz

1.2 W

.05 A

1

Other Transistors

50

150 Cel

Tin/Lead (Sn/Pb)

e0

2SA1943N(Q)

Toshiba

PNP

SINGLE

NO

150 W

15 A

1

Other Transistors

80

150 Cel

2SA1325

Toshiba

PNP

SINGLE

YES

100 MHz

.15 W

.1 A

1

Other Transistors

200

125 Cel

Tin/Lead (Sn/Pb)

e0

2SA1620-O(TE85L,F)

Toshiba

PNP

SINGLE

YES

70 MHz

.2 W

.3 A

1

Other Transistors

70

150 Cel

2SA1298-O(TE85L)

Toshiba

2SA1955FV-B(TPL3)

Toshiba

PNP

SINGLE

YES

80 MHz

.15 W

.4 A

1

Other Transistors

500

150 Cel

2SA1204-Y(TE12L,CF)

Toshiba

PNP

SINGLE

YES

1 W

.8 A

1

Other Transistors

160

150 Cel

2SA1680(TE6,F,M)

Toshiba

PNP

SINGLE

NO

.9 W

2 A

1

Other Transistors

120

150 Cel

2SA1426-Y(TPF2)

Toshiba

PNP

SINGLE

NO

1 W

.8 A

1

Other Transistors

160

150 Cel

2SA1244O(SM)

Toshiba

PNP

SINGLE

YES

20 W

5 A

1

Other Transistors

70

150 Cel

Tin/Lead (Sn/Pb)

e0

2SA1761(TPE6)

Toshiba

PNP

SINGLE

NO

.9 W

3 A

1

Other Transistors

120

150 Cel

2SA1255-Y(TE85L)

Toshiba

2SA1586-GR(TE85L)

Toshiba

2SA1244-O(TE16L1)

Toshiba

PNP

SINGLE

YES

20 W

5 A

1

Other Transistors

70

150 Cel

2SA1953-A(TE85L,F)

Toshiba

PNP

SINGLE

YES

80 MHz

.15 W

.5 A

1

Other Transistors

300

125 Cel

2SA1429-Y(TPF2,F)

Toshiba

PNP

SINGLE

YES

1 W

2 A

1

Other Transistors

70

150 Cel

2SA1953-B(TE85L,F)

Toshiba

PNP

SINGLE

YES

80 MHz

.15 W

.5 A

1

Other Transistors

500

125 Cel

2SA1308

Toshiba

PNP

SINGLE

NO

30 W

5 A

1

Other Transistors

70

140 Cel

Tin/Lead (Sn/Pb)

e0

2SA1483O(TE12L,F)

Toshiba

PNP

SINGLE

YES

100 MHz

1 W

.2 A

1

Other Transistors

70

150 Cel

2SA1943N(F)

Toshiba

PNP

SINGLE

NO

150 W

15 A

1

Other Transistors

80

150 Cel

2SA1986-R(Q)

Toshiba

2SA1264

Toshiba

PNP

SINGLE

NO

30 MHz

80 W

8 A

1

Other Transistors

55

140 Cel

Tin/Lead (Sn/Pb)

e0

2SA1972(TE6,F,M)

Toshiba

PNP

SINGLE

NO

.9 W

.5 A

1

Other Transistors

140

150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.