Other Function Transistors

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Moisture Sensitivity Level (MSL)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2N3568	STMicroelectronics	NPN	SINGLE	NO	60 MHz	.3 W	.5 A		1		Other Transistors		40	125 Cel	Tin/Lead (Sn/Pb)			e0
2N3569	STMicroelectronics	NPN	SINGLE	NO	60 MHz	.3 W	.5 A		1		Other Transistors		100	125 Cel	Tin/Lead (Sn/Pb)			e0
2N5946	STMicroelectronics	NPN	SINGLE	NO		37 W	2 A		1		Other Transistors		20	200 Cel
2SA937	ROHM	PNP	SINGLE	NO	140 MHz	.3 W	.1 A		1		Other Transistors		390		Tin/Lead (Sn/Pb)			e0
2SK3911(Q)	Toshiba
BC300	Texas Instruments	NPN	SINGLE	NO	120 MHz	7 W	1 A		1		Other Transistors		40	100 Cel
BC55-16PA,115	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	1.65 W	1 A		1		Other Transistors		63	150 Cel	TIN		1	e3	30	260
BF244	Texas Instruments	N-CHANNEL		NO		.36 W					Other Transistors	JUNCTION		150 Cel
MJE2955	Motorola	PNP	SINGLE	NO	2 MHz	90 W	10 A		1		Other Transistors		20	150 Cel	Tin/Lead (Sn/Pb)			e0
MJE8502	Motorola	NPN	SINGLE	NO		80 W	5 A		1		Other Transistors		7.5	125 Cel	Tin/Lead (Sn/Pb)			e0
PBSS5612PA,115	NXP Semiconductors	PNP	SINGLE	YES	40 MHz	2.1 W	6 A		1		Other Transistors		130	150 Cel	TIN		1	e3	30	260
PMK50XP,518	NXP Semiconductors	P-CHANNEL	SINGLE	YES		5 W		ENHANCEMENT MODE	1	7.9 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		7.9 A	2		30	260
SSM6J215FE(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.7 W		ENHANCEMENT MODE	1	3.4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		3.4 A
2A5	Microchip Technology	NPN	SINGLE	NO	3400 MHz	5.3 W	.3 A				Other Transistors		20	200 Cel
2N2369	Texas Instruments	NPN	SINGLE	NO	500 MHz	.36 W	.5 A		1		Other Transistors		40	200 Cel
2N3565	Texas Instruments	NPN	SINGLE	NO	40 MHz	.2 W	.05 A		1		Other Transistors		10	125 Cel
2N3726	National Semiconductor	PNP		NO	60 MHz	.4 W	.3 A				Other Transistors			175 Cel	Tin/Lead (Sn/Pb)			e0
2N3908	National Semiconductor	NPN	SINGLE	NO	60 MHz	.6 W	.03 A		1		Other Transistors		125	200 Cel	Tin/Lead (Sn/Pb)			e0
2N554	Digitron Semiconductors	PNP	SINGLE	NO	.006 MHz	10 W	3 A		1		Other Transistors			90 Cel
2N5591	Texas Instruments	NPN	SINGLE	NO	200 MHz	70 W	4 A		1		Other Transistors		5	175 Cel
2N5630	Texas Instruments	NPN	SINGLE	NO	1 MHz	200 W	16 A		1		Other Transistors		20	200 Cel
2N6080	Texas Instruments	NPN	SINGLE	NO		12 W	1 A		1		Other Transistors		5	200 Cel
2N6084	Texas Instruments	NPN	SINGLE	NO		80 W	6 A		1		Other Transistors		5	200 Cel
2N700	Digitron Semiconductors	PNP	SINGLE	NO		.075 W	.05 A		1		Other Transistors		1.5	100 Cel
2SA1312-BL(TE85L,F)	Toshiba	PNP	SINGLE	YES		.15 W	.1 A		1		Other Transistors		350	125 Cel
2SA671C	Mospec Semiconductor	PNP	SINGLE	NO	5 MHz	25 W	3 A		1		Other Transistors		100	150 Cel
2SB755	Toshiba	PNP	SINGLE	NO	20 MHz	120 W	12 A		1		Other Transistors		55	140 Cel	Tin/Lead (Sn/Pb)			e0
2SC2565	Toshiba	NPN	SINGLE	NO	80 MHz	150 W	15 A		1		Other Transistors		55	140 Cel	Tin/Lead (Sn/Pb)			e0
2SC2706	Toshiba	NPN	SINGLE	NO		100 W	10 A		1		Other Transistors		55	150 Cel	Tin/Lead (Sn/Pb)			e0
2SC372	National Semiconductor	NPN	SINGLE	NO	200 MHz	.2 W	.1 A		1		Other Transistors		70	125 Cel	Tin/Lead (Sn/Pb)			e0
2SC5198R(Q)	Toshiba	NPN	SINGLE	NO		100 W	10 A		1		Other Transistors		55	150 Cel
2SC5712(TE12L,F)	Toshiba	NPN	SINGLE	YES		2.5 W	3 A		1		Other Transistors		400	150 Cel
2SC5713(TE12L,F)	Toshiba	NPN	SINGLE	YES		2.5 W	4 A		1		Other Transistors		400	150 Cel
2SD845	Toshiba	NPN	SINGLE	NO	20 MHz	120 W	12 A		1		Other Transistors		55	140 Cel	Tin/Lead (Sn/Pb)			e0
2SJ681(Q)	Toshiba	P-CHANNEL	SINGLE	NO		20 W		ENHANCEMENT MODE	1	5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		5 A
2SK1119(F)	Toshiba
BC213	Texas Instruments	PNP	SINGLE	NO		.35 W	.1 A		1		Other Transistors		80	150 Cel
BD745C	Texas Instruments	NPN	SINGLE	NO		3.5 W	20 A		1		Other Transistors		20	140 Cel
IMX17	ROHM	NPN		YES			.5 A				Other Transistors		120		TIN SILVER COPPER			e1		260
MJ2955	Texas Instruments	PNP	SINGLE	NO	2.5 MHz	115 W	15 A		1		Other Transistors		20	200 Cel
MJ4031	Texas Instruments	PNP	DARLINGTON	NO		150 W	16 A				Other Transistors		1000	200 Cel
MPF105	National Semiconductor	N-CHANNEL		NO		.2 W					Other Transistors	JUNCTION		125 Cel	Tin/Lead (Sn/Pb)			e0
MPS-U60	Motorola	PNP	SINGLE	NO	60 MHz	1 W	.5 A		1		Other Transistors		25	150 Cel	Tin/Lead (Sn/Pb)			e0
MRF458	Motorola	NPN	SINGLE	NO	30 MHz	175 W	10 A		1		Other Transistors		10	140 Cel
MT3S111(TE85L,F)	Toshiba	NPN	SINGLE	YES	9000 MHz	.7 W	.1 A		1		Other Transistors		200	150 Cel
NF5101	National Semiconductor	N-CHANNEL		NO		.36 W					Other Transistors	JUNCTION		150 Cel	Tin/Lead (Sn/Pb)			e0
PBHV8140Z,115	NXP Semiconductors	NPN	SINGLE	YES		1.45 W	1 A		1		Other Transistors		10	150 Cel	TIN		1	e3	30	260
PBSS3540MB,315	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	.59 W	.5 A		1		Other Transistors		40	150 Cel	TIN		1	e3	30	260

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.