Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Minimum Operating Temperature | Terminal Finish | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP Semiconductors |
PNP |
SINGLE |
YES |
2.5 W |
5 A |
1 |
Other Transistors |
80 |
150 Cel |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||
|
NXP Semiconductors |
P-CHANNEL |
YES |
4.025 W |
ENHANCEMENT MODE |
.5 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.5 A |
|||||||||||||||||||||||||||||||
Diodes Incorporated |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
PNP |
SINGLE |
NO |
60 MHz |
150 W |
15 A |
1 |
Other Transistors |
55 |
140 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||
|
Central Semiconductor |
PNP |
SINGLE |
YES |
20 MHz |
.35 W |
.5 A |
1 |
Other Transistors |
50 |
150 Cel |
MATTE TIN |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||
|
TE Connectivity |
NPN |
SINGLE |
NO |
300 W |
10 A |
1 |
Other Transistors |
200 Cel |
||||||||||||||||||||||||||||||||
|
Toshiba |
PNP |
SINGLE |
NO |
100 W |
10 A |
1 |
Other Transistors |
80 |
150 Cel |
|||||||||||||||||||||||||||||||
Forward International Electronics |
NPN |
SINGLE |
NO |
.3 W |
.1 A |
1 |
Other Transistors |
200 |
150 Cel |
||||||||||||||||||||||||||||||||
Texas Instruments |
PNP |
SINGLE |
NO |
.35 W |
.1 A |
1 |
Other Transistors |
60 |
150 Cel |
||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
PNP |
SINGLE |
YES |
100 MHz |
.25 W |
.1 A |
1 |
Other Transistors |
120 |
150 Cel |
Matte Tin (Sn) |
e3 |
||||||||||||||||||||||||||||
|
Bourns |
PNP |
SINGLE |
NO |
65 W |
6 A |
1 |
Other Transistors |
15 |
150 Cel |
|||||||||||||||||||||||||||||||
Fujitsu |
N-CHANNEL |
.4 A |
Other Transistors |
METAL SEMICONDUCTOR |
7.5 W |
.4 A |
|||||||||||||||||||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL |
NO |
.4 W |
Other Transistors |
JUNCTION |
150 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||
|
Fairchild Semiconductor |
NPN |
SINGLE |
NO |
20 W |
5 A |
1 |
Other Transistors |
160 |
150 Cel |
Matte Tin (Sn) |
e3 |
|||||||||||||||||||||||||||||
Texas Instruments |
NPN |
SINGLE |
NO |
150 MHz |
.6 W |
.2 A |
1 |
Other Transistors |
420 |
175 Cel |
|||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
NPN |
SINGLE |
YES |
100 MHz |
.3 W |
.1 A |
1 |
Other Transistors |
200 |
150 Cel |
Matte Tin (Sn) |
1 |
e3 |
|||||||||||||||||||||||||||
|
Fairchild Semiconductor |
NPN |
SINGLE |
NO |
.35 W |
.03 A |
1 |
Other Transistors |
67 |
150 Cel |
Matte Tin (Sn) |
e3 |
|||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
YES |
.25 W |
Other Transistors |
JUNCTION |
150 Cel |
MATTE TIN |
1 |
e3 |
260 |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
YES |
.3 W |
Other Transistors |
JUNCTION |
150 Cel |
TIN |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
NPN |
SINGLE |
YES |
.3 W |
.035 A |
1 |
Other Transistors |
40 |
175 Cel |
Matte Tin (Sn) |
e3 |
|||||||||||||||||||||||||||||
|
NXP Semiconductors |
NPN |
SINGLE |
YES |
1600 MHz |
.3 W |
.05 A |
1 |
Other Transistors |
25 |
150 Cel |
TIN |
e3 |
30 |
260 |
||||||||||||||||||||||||||
Jiangsu Changjiang Electronics Technology |
NPN |
SINGLE |
YES |
.5 W |
.8 A |
1 |
Other Transistors |
120 |
150 Cel |
||||||||||||||||||||||||||||||||
|
Weitron Technology |
PNP |
SINGLE |
YES |
100 MHz |
.3 W |
.5 A |
1 |
Other Transistors |
50 |
150 Cel |
||||||||||||||||||||||||||||||
|
Nte Electronics |
||||||||||||||||||||||||||||||||||||||||
|
Toshiba |
PNP |
SINGLE |
NO |
100 W |
10 A |
1 |
Other Transistors |
55 |
150 Cel |
|||||||||||||||||||||||||||||||
Weitron Technology |
|||||||||||||||||||||||||||||||||||||||||
Yangzhou Yangjie Electronics |
|||||||||||||||||||||||||||||||||||||||||
Yangzhou Yangjie Electronics |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
|||||||||||||||||||||||||||||||||||||||||
Zetex Plc |
NPN |
SINGLE |
NO |
150 MHz |
.3 W |
.1 A |
1 |
Other Transistors |
150 Cel |
TIN LEAD |
e0 |
10 |
235 |
||||||||||||||||||||||||||||
Texas Instruments |
NPN |
DARLINGTON |
NO |
20 MHz |
60 W |
8 A |
Other Transistors |
750 |
150 Cel |
||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
YES |
.25 W |
Other Transistors |
JUNCTION |
150 Cel |
||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
NPN |
SINGLE |
YES |
.03 A |
1 |
Other Transistors |
130 |
175 Cel |
||||||||||||||||||||||||||||||||
|
Central Semiconductor |
PNP |
SINGLE |
YES |
250 MHz |
.35 W |
.2 A |
1 |
Other Transistors |
100 |
150 Cel |
MATTE TIN |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||
|
Weitron Technology |
PNP |
SINGLE |
NO |
200 MHz |
.225 W |
.6 A |
1 |
Other Transistors |
50 |
150 Cel |
||||||||||||||||||||||||||||||
|
TE Connectivity |
NPN |
SINGLE |
583 W |
1 |
Other Transistors |
10 |
150 Cel |
|||||||||||||||||||||||||||||||||
|
Renesas Electronics |
NPN |
SINGLE |
YES |
20000 MHz |
.115 W |
.035 A |
1 |
Other Transistors |
50 |
150 Cel |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
NPN |
SINGLE |
YES |
1.1 W |
2.6 A |
1 |
Other Transistors |
100 |
150 Cel |
TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||
|
TE Connectivity |
NPN |
SINGLE |
YES |
100 W |
7 A |
1 |
Other Transistors |
200 Cel |
||||||||||||||||||||||||||||||||
|
Calogic |
||||||||||||||||||||||||||||||||||||||||
Vishay Intertechnology |
P-CHANNEL |
SINGLE |
YES |
1.25 W |
ENHANCEMENT MODE |
1 |
4.1 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
4.1 A |
e0 |
||||||||||||||||||||||||||||
Semitronics |
NPN |
SINGLE |
NO |
.5 MHz |
100 W |
6 A |
1 |
Other Transistors |
11 |
140 Cel |
|||||||||||||||||||||||||||||||
Renesas Electronics |
PNP |
SINGLE |
YES |
300 MHz |
2 W |
1 A |
1 |
Other Transistors |
60 |
150 Cel |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
PNP |
SINGLE |
YES |
300 MHz |
2 W |
1 A |
1 |
Other Transistors |
60 |
150 Cel |
||||||||||||||||||||||||||||||
Renesas Electronics |
PNP |
SINGLE |
YES |
300 MHz |
2 W |
1 A |
1 |
Other Transistors |
60 |
150 Cel |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
PNP |
SINGLE |
YES |
300 MHz |
2 W |
1 A |
1 |
Other Transistors |
60 |
150 Cel |
||||||||||||||||||||||||||||||
|
Toshiba |
NPN |
SINGLE |
YES |
260 MHz |
.1 W |
.02 A |
1 |
Other Transistors |
70 |
125 Cel |
||||||||||||||||||||||||||||||
|
Alpha & Omega Semiconductor |
MATTE TIN |
e3 |
Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.
Some examples of other function transistors include:
1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.
2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.
3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.
4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.
5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.
Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.