Other Function Transistors

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Moisture Sensitivity Level (MSL)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
BC546A	Texas Instruments	NPN	SINGLE	NO	150 MHz	.625 W	.1 A		1		Other Transistors			110	150 Cel
TIP42A-S	Bourns	PNP	SINGLE	NO		65 W	6 A		1		Other Transistors			15	150 Cel
AOD4184A	Alpha & Omega Semiconductor
NX3008PBKMB,315	NXP Semiconductors	P-CHANNEL	SINGLE	YES		.715 W		ENHANCEMENT MODE	1	.3 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel	TIN	.3 A	1	e3	30	260
JANTXV2N2907AUBC	Microchip Technology	PNP	SINGLE	YES		.5 W	.6 A				Other Transistors			100	200 Cel
BSP317P-E6327	Infineon Technologies	P-CHANNEL	SINGLE	YES		1.8 W		ENHANCEMENT MODE	1	.43 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel		.43 A	1			255
MJE3055	Motorola	NPN	SINGLE	NO	2 MHz	90 W	10 A		1		Other Transistors			20	150 Cel	Tin/Lead (Sn/Pb)			e0
BC546	Texas Instruments	NPN	SINGLE	NO	150 MHz	.625 W	.1 A		1		Other Transistors			110	150 Cel
FDC602P-F095	Fairchild Semiconductor	P-CHANNEL	SINGLE	YES		1.6 W		ENHANCEMENT MODE	1	5.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel		5.5 A
BD243CTU	Fairchild Semiconductor	NPN	SINGLE	NO		65 W	6 A		1		Other Transistors			15	150 Cel	Matte Tin (Sn)			e3
MAPR-000912-500S00	TE Connectivity																				260
MJE13005	Texas Instruments	NPN	SINGLE	NO	4 MHz	75 W	4 A		1		Other Transistors			8	150 Cel
BD136	Texas Instruments	PNP	SINGLE	NO	75 MHz	8 W	1.5 A		1		Other Transistors			40	150 Cel
TTC5200(Q)	Toshiba	NPN	SINGLE	NO		150 W	15 A		1		Other Transistors			80	150 Cel
SI2301BDS-T1	Vishay Intertechnology	P-CHANNEL	SINGLE	YES		.9 W		ENHANCEMENT MODE	1	2.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel		2.2 A
12A01C-TB-E	Onsemi	PNP	SINGLE	YES		.3 W	.5 A		1		Other Transistors			300	150 Cel	Tin/Bismuth (Sn/Bi)		1	e6
1720-2	Microsemi
30A01C-TB-E	Onsemi	PNP	SINGLE	YES		.3 W	.3 A		1		Other Transistors			200	150 Cel	Tin/Bismuth (Sn/Bi)		1	e6
BCW72	Vishay Intertechnology	NPN	SINGLE	YES	100 MHz	.25 W	.1 A		1		Other Transistors			200	150 Cel	Matte Tin (Sn)			e3
FLL120MK	Fujitsu	N-CHANNEL									Other Transistors	METAL SEMICONDUCTOR	37.5 W		175 Cel
2SC5200R(Q)	Toshiba	NPN	SINGLE	NO		150 W	15 A		1		Other Transistors			55	150 Cel
MMDT5401	Diodes Incorporated	PNP		YES	100 MHz		.2 A				Other Transistors			240	150 Cel
BD237	Texas Instruments	NPN	SINGLE	NO	3 MHz	25 W	2 A		1		Other Transistors			40	150 Cel
2SK436	Onsemi	N-CHANNEL		YES		.15 W					Other Transistors	JUNCTION			125 Cel
2SK436-20	Onsemi	N-CHANNEL		YES		.15 W					Other Transistors	JUNCTION			125 Cel
BCX56H6327XTSA1	Infineon Technologies	NPN	SINGLE	YES		2 W	1 A		1		Other Transistors			40	150 Cel	TIN		1	e3
BC182A	Texas Instruments	NPN	SINGLE	NO	150 MHz	.35 W	.1 A		1		Other Transistors			120	150 Cel
PMBT3906MB,315	NXP Semiconductors	PNP	SINGLE	YES	250 MHz	.59 W	.2 A		1		Other Transistors			100	150 Cel	TIN		1	e3	30	260
PMDXB1200UPEZ	NXP Semiconductors	P-CHANNEL		YES		4.03 W		ENHANCEMENT MODE		.41 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel		.41 A
BCW60B	Vishay Intertechnology	NPN	SINGLE	YES	100 MHz	.25 W	.1 A		1		Other Transistors			20	150 Cel	Matte Tin (Sn)			e3
LSK170A-SOT-23-3L	Linear Integrated Systems	N-CHANNEL		YES		.4 W					Other Transistors	JUNCTION			135 Cel
BC557A	Texas Instruments	PNP	SINGLE	NO		.625 W	.1 A		1		Other Transistors			120	150 Cel
BDX34C	Texas Instruments	PNP	DARLINGTON	NO	3 MHz	70 W	10 A				Other Transistors			750	150 Cel
MMDT5551	Diodes Incorporated	NPN		YES			.2 A				Other Transistors			80	150 Cel
MMBT3906-T	Rectron	PNP	SINGLE	YES	250 MHz	.15 W	.2 A		1		Other Transistors			100	150 Cel
MPSA56	Texas Instruments	PNP	SINGLE	NO	50 MHz	.625 W	.5 A		1		Other Transistors			50	150 Cel
2N6052	Texas Instruments	PNP	DARLINGTON	NO	4 MHz	150 W	12 A				Other Transistors			750	200 Cel
MRF422	TE Connectivity	NPN	SINGLE			290 W			1		Other Transistors			15	150 Cel
MMBTA56	Vishay Intertechnology	PNP	SINGLE	YES	50 MHz	.3 W	.5 A		1		Other Transistors			100	150 Cel	Matte Tin (Sn)			e3
BC169B	National Semiconductor	NPN	SINGLE	NO	85 MHz	.5 W	.5 A		1		Other Transistors			180	150 Cel	Tin/Lead (Sn/Pb)			e0
BC847BW/DG,115	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.2 W	.1 A		1		Other Transistors			200	150 Cel
BFR520,235	NXP Semiconductors	NPN	SINGLE	YES		.3 W	.07 A		1		Other Transistors			60	150 Cel	TIN		1	e3	30	260
TIP102	Texas Instruments	NPN	DARLINGTON	NO		80 W	8 A				Other Transistors			1000	150 Cel
2N3904H	Onsemi															Tin/Silver/Copper (Sn/Ag/Cu)			e1
BFR93AW	Vishay Intertechnology	NPN	SINGLE	YES	4500 MHz	.3 W	.035 A		1		Other Transistors			40	150 Cel
J113	Vishay Intertechnology	N-CHANNEL		NO		.4 W					Other Transistors	JUNCTION			150 Cel	Tin/Lead (Sn/Pb)			e0
PMZB350UPE,315	NXP Semiconductors	P-CHANNEL		YES		.5 W		ENHANCEMENT MODE		.55 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel	TIN	.55 A	1	e3	30	260
FDMC4435BZ-F126	Fairchild Semiconductor	P-CHANNEL	SINGLE	YES		31 W		ENHANCEMENT MODE	1	18 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel	NICKEL PALLADIUM GOLD	18 A	1	e4	30	260

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.